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MT9P401I12STC-DP

Onsemi

MT9P401I12STC-DP by Onsemi

The Onsemi MT9P401I12STC-DP is a 2.2x2.2 um CMOS image sensor with 2592 (H) x 1944 (V) pixels, offering a dynamic range of 70.1 dB and operating at temperatures from -30 to 70 °C. It features a max supply voltage of 1.9 V, operates at a clock speed of 96 MHz, and has an output interface type of 2-WIRE for applications in frame arrays requiring high-resolution imaging at up to 15 fps.

Median Price

$20.230

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

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$20.230

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$18.100

10k+ parts

$17.030

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$20.230

$18.100

$17.030

Distributors (In-Stock)

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Digiode

USA . 823 parts In-Stock

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$21.404

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Vyrian

USA . 2,591 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.982

100+ parts

$1.962

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$1.882

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500

$1.982

$1.962

$1.882

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AZTECH Wire

Italy . 259 parts In-Stock

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$8.680

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Corphita

USA . 2,374 parts In-Stock

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$20.277

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Corohmni

South Africa . 178 parts In-Stock

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$22.530

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,710 parts In-Stock

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SupplyDigital Components

Austria . 5,649 parts In-Stock

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TANS Electronics

Latvia . 2,397 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 1,267 parts In-Stock

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UHIMA Technologies

Türkiye . 796 parts In-Stock

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Overview

Capture every detail with the MT9P401I12STC-DP by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability. This sensor is perfect for a wide range of applications, providing crystal-clear images with a high dynamic range. Elevate your imaging experience with this product's advanced features and superior performance. Trust Onsemi to deliver cutting-edge technology that meets all your imaging needs. Choose the MT9P401I12STC-DP for unparalleled value and exceptional results.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and extending battery life.

Master Clock: 96 MHz

High master clock frequency enables fast data processing and readout speed.

Body Width: 10 inch

Compact body width makes it suitable for integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers low noise, high sensitivity, and low power consumption.

Body Height: 1.25 mm

Low body height allows for slim designs and easy integration into thin devices.

Package Shape or Style: SQUARE

Square package shape ensures easy and secure mounting onto circuit boards.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance allows for usage in various environmental conditions.

Horizontal Pixel: 2592

High horizontal pixel count provides sharp and detailed images.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature tolerance allows for usage in cold environments without performance issues.

Maximum Operating Current: 80 mA

Low operating current helps in reducing power consumption and extending battery life.

Dynamic Range: 70.1 dB

High dynamic range enables capturing images with a wide range of light intensities.

Vertical Pixel: 1944

High vertical pixel count provides sharp and detailed images.

Body Length/Diameter: 10 mm

Compact body length allows for easy integration into devices with limited space.

Optical Format (inch): 1/2.5

Common optical format ensuring compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination offers secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 15 fps

Decent frame rate suitable for capturing smooth videos and fast-moving objects.

Array Type: FRAME

Frame array type offers organized pixel arrangement for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount option enables easy and secure mounting onto circuit boards.

Technical Specifications

Image Sensors MT9P401I12STC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.60-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

15 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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