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MT9P111D00STCK28AC1-200

Onsemi

MT9P111D00STCK28AC1-200 by Onsemi

The Onsemi MT9P111D00STCK28AC1-200 is a CMOS image sensor with 1.40x1.40 um pixel size, operating at 48 MHz master clock. It has an optical format of 1/4 inch and offers a dynamic range of 62 dB. Ideal for applications requiring digital voltage output, such as frame arrays with a frame rate of 15 fps.

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ACDS - Activité Composants Distribution Service

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AZTECH Wire

Italy . 545 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

Latvia . 5,207 parts In-Stock

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Overview

Capture every moment in stunning detail with the MT9P111D00STCK28AC1-200 Image Sensor by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that guarantee exceptional performance and reliability. Ideal for a wide range of applications, this image sensor offers unparalleled value with its high dynamic range, fast frame rate, and precise imaging capabilities. Elevate your projects with the MT9P111D00STCK28AC1-200 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Pixel Size (um): 1.40X1.40

The small pixel size allows for high resolution images to be captured with fine detail.

Maximum Supply Voltage: 1.95 V

Operating at a lower maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 48 MHz

High master clock frequency enables fast processing of image data for real-time applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide low power consumption and good image quality, making them a popular choice in image sensing applications.

Minimum Supply Voltage: 1.7 V

Having a low minimum supply voltage ensures stable operation even under low power conditions.

Output Range: 0.40-1.40V

Wide output voltage range allows for flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies the signal processing and interfacing with other digital systems.

Maximum Operating Current: 56 mA

Low operating current consumption helps in reducing power usage and extending battery life in portable devices.

Dynamic Range: 62 dB

High dynamic range allows for the capture of both bright and dark areas in a scene with good detail.

Optical Format (inch): 1/4

1/4 inch optical format is common and widely supported, making the sensor compatible with a variety of lens options.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the communication with external devices and reduces the number of required pins for connection.

Frame Rate: 15 fps

A frame rate of 15 fps is suitable for many standard imaging applications and provides smooth video output.

Array Type: FRAME

Frame array structure allows for efficient capture of complete image frames, enabling quick processing and transmission of data.

Technical Specifications

Image Sensors MT9P111D00STCK28AC1-200 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO HAS ANALOG SUPPLY VOLTAGE 2.50-3.10 V

Array Type:

FRAME

Dynamic Range:

62 dB

Frame Rate:

15 fps

Master Clock:

48 MHz

Maximum Operating Current:

56 mA

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.40X1.40

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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