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MT9M021IA3XTM-DRBR

Onsemi

MT9M021IA3XTM-DRBR by Onsemi

MT9M021IA3XTM-DRBR by Onsemi is an image sensor with 1280x960 resolution, 3.75um pixel size, and 50MHz master clock. It operates b/w -30 to 70°C and has a dynamic range of 64dB. Ideal for applications requiring high-quality digital imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,077 parts In-Stock

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Vyrian

USA . 917 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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AZTECH Wire

Italy . 528 parts In-Stock

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$6.457

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Ampacity Inc.

Singapore . 1,583 parts In-Stock

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$10.750

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Problanco Electronics

Mexico . 7,086 parts In-Stock

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Kulean Microsystems

USA . 5,529 parts In-Stock

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Corphita

USA . 2,408 parts In-Stock

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SupplyDigital Components

Austria . 1,152 parts In-Stock

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TANS Electronics

Latvia . 957 parts In-Stock

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UHIMA Technologies

Türkiye . 718 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Overview

Capture the world in stunning clarity with the MT9M021IA3XTM-DRBR Image Sensor by Onsemi. Known for their impeccable quality and innovation, Onsemi delivers a cutting-edge product that exceeds expectations. Perfect for applications that demand precision and sharpness, this image sensor offers unparalleled performance and reliability. Experience crystal-clear images with unmatched detail, making your projects stand out from the rest. Elevate your work to new heights with the MT9M021IA3XTM-DRBR Image Sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 1.95 V

Allows for efficient power usage and compatibility with a variety of power sources.

Master Clock: 50 MHz

High master clock frequency enables fast data readout and processing, making this sensor suitable for real-time applications.

Body Width: 10 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low-power consumption and high image quality, making them a reliable choice for imaging applications.

Body Height: 1.25 mm

Low body height enables slim designs and flexibility in product placement.

Package Shape or Style: SQUARE

Square package shape simplifies mounting and ensures stability during operation.

Minimum Supply Voltage: 1.7 V

Wide range of supply voltage allows for flexibility in power source selection.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count contributes to high-resolution image capture and sharpness.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies data processing and transmission, enhancing overall system efficiency.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows for use in extreme weather conditions without compromising performance.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Quality terminal finish ensures reliable electrical connections and durability.

Maximum Operating Current: 55 mA

Moderate operating current allows for efficient power consumption and prolonged product lifespan.

Dynamic Range: 64 dB

Wide dynamic range enables the sensor to capture both dark and bright areas in a scene with balanced details.

Vertical Pixel: 960

High vertical pixel count complements horizontal resolution for detailed image rendering.

Body Length/Diameter: 10 mm

Compact body length/diameter contributes to a small form factor and versatility in product design.

Optical Format (inch): 1/3

Standard optical format allows for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination type ensures secure and stable connections for reliable data transmission.

Output Interface Type: 2-WIRE INTERFACE

Simple 2-wire interface facilitates easy integration and communication with other devices or systems.

Frame Rate: 45 fps

High frame rate enables smooth and fluid image capture in fast-moving scenes.

Array Type: SINGLE FRAME

Single frame array type simplifies image capture and processing, making it ideal for various applications.

Sensitivity (V/lx.s): 5.3 V/lx.s

High sensitivity allows the sensor to capture detailed images in low light conditions with minimal noise.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and ensures secure attachment for reliable performance.

Technical Specifications

Image Sensors MT9M021IA3XTM-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE, IBGA PACKAGE ALSO AVAILABLE

Array Type:

SINGLE FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

45 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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