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MT9M021IA3XTC-DPBR1

Onsemi

MT9M021IA3XTC-DPBR1 by Onsemi

Onsemi's MT9M021IA3XTC-DPBR1 is a 1/3" CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. Operating at -30 to 70 °C, it features a digital output interface and is ideal for applications requiring high-quality imaging at up to 60fps.

Median Price

$23.750

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 110 parts In-Stock

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Vyrian

USA . 4,170 parts In-Stock

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Digiode

USA . 2,036 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

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SupplyDigital Components

Austria . 5,321 parts In-Stock

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TANS Electronics

Latvia . 4,983 parts In-Stock

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Kulean Microsystems

USA . 4,110 parts In-Stock

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Problanco Electronics

Mexico . 2,555 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 434 parts In-Stock

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Overview

Experience high-quality imaging like never before with the MT9M021IA3XTC-DPBR1 image sensor by Onsemi. This cutting-edge sensor offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. From security cameras to industrial inspection systems, this sensor provides crystal-clear images with exceptional detail. Trust Onsemi's reputation for excellence and invest in the MT9M021IA3XTC-DPBR1 for all your imaging needs. Unlock the benefits of superior image quality and precision with this innovative sensor today!

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size results in higher resolution images and better low-light performance.

Maximum Supply Voltage: 1.95 V

Provides a wide range of voltage compatibility for different power supply configurations.

Master Clock: 50 MHz

High master clock frequency enables faster data processing and higher frame rates.

Body Width: 9 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS technology offers low power consumption and high sensitivity for optimal image quality.

Vertical Pixel: 960

High vertical pixel count provides detailed image capture and enhances image resolution.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication with external devices and reduces overall system complexity.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and secure mounting on PCBs, saving space and simplifying assembly.

Technical Specifications

Image Sensors MT9M021IA3XTC-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.35 mm

Body Length/Diameter:

9 mm

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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