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AR0135CS2M00SUEA0-DRBR

Onsemi

AR0135CS2M00SUEA0-DRBR by Onsemi

The Onsemi AR0135CS2M00SUEA0-DRBR image sensor features 3.75um pixel size, 1.95V max supply voltage, and 50MHz master clock. Ideal for applications requiring a high-resolution CMOS sensor with a square package style, such as surveillance cameras or industrial imaging systems.

Median Price

$58.425

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

AR0135CS2M00SUEA0-DRBR by Onsemi
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,151 parts In-Stock

1+ parts

$23.050

100+ parts

$19.000

1k+ parts

-

10k+ parts

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1,151

$23.050

$19.000

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Chip1Stop

Japan . 1,947 parts In-Stock

1+ parts

$93.800

100+ parts

$44.300

1k+ parts

$29.500

10k+ parts

-

1,947

$93.800

$44.300

$29.500

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Flip Electronics (Authorized)

USA . 27,300 parts In-Stock

1+ parts

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27,300

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Distributors (In-Stock)

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Digiode

USA . 196 parts In-Stock

1+ parts

$25.935

100+ parts

-

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196

$25.935

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Vyrian

USA . 405 parts In-Stock

1+ parts

$27.300

100+ parts

-

1k+ parts

-

10k+ parts

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405

$27.300

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Flip Electronics

USA . 27,300 parts In-Stock

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-

100+ parts

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27,300

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Distributors (Availability)

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Corphita

USA . 1,239 parts In-Stock

1+ parts

$24.570

100+ parts

-

1k+ parts

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10k+ parts

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1,239

$24.570

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Corohmni

South Africa . 59 parts In-Stock

1+ parts

$27.300

100+ parts

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59

$27.300

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Perfect Parts

USA . 10,662 parts In-Stock

1+ parts

-

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10,662

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SupplyDigital Components

Austria . 4,191 parts In-Stock

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4,191

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TANS Electronics

Latvia . 1,901 parts In-Stock

1+ parts

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1,901

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Native Components

USA . 792 parts In-Stock

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792

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Kulean Microsystems

USA . 552 parts In-Stock

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552

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UHIMA Technologies

Türkiye . 551 parts In-Stock

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551

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Northwest PG Solutions

USA . 237 parts In-Stock

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237

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Problanco Electronics

Mexico . 49 parts In-Stock

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49

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Overview

Capture every moment in stunning clarity with the AR0135CS2M00SUEA0-DRBR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability. This image sensor is perfect for a wide range of applications, from security cameras to automotive systems. With its high resolution and exceptional dynamic range, customers can trust in the value and benefits that this product brings. Don't miss out on the opportunity to elevate your imaging experience with the AR0135CS2M00SUEA0-DRBR.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.95 V

Allows for efficient power consumption and operation within safe voltage limits.

Master Clock: 50 MHz

Provides high-speed processing capabilities for quick and accurate image capture.

Body Width: 9 inch

Compact size for easy integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers low power consumption and high sensitivity for optimal imaging performance.

Maximum Operating Temperature: 70 °C

Ensures reliable operation even in higher temperature environments.

Horizontal Pixel: 1280

Higher pixel count provides detailed and sharp images with more information.

Output Range: 0.40-1.50V

Wide output range for accurate and adjustable signal output.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and transmission.

Minimum Operating Temperature: -30 °C

Allows for operation in colder environments without performance degradation.

Frame Rate: 54 fps

High frame rate enables smooth and real-time image capture for dynamic scenes.

Mounting Feature: SURFACE MOUNT

Easy and secure mounting option for efficient integration into various devices or systems.

Technical Specifications

Image Sensors AR0135CS2M00SUEA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.39 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.1 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

90 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

Trade Compliance

AR0135CS2M00SUEA0-DRBR Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.40.60.50

SB

8541.40.60.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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