Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2STN2360
STMicroelectronics
2STN2360 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.6 W, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.
COLLECTOR
3 A
60 V
SINGLE
80
R-PDSO-G4
e3
1
4
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
1.6 W
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
30
SWITCHING
SILICON
130 MHz
STD826T4
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
30 V
R-PSSO-G2
2
15 W
Matte Tin (Sn) - annealed
100 MHz
2STF2340
2STF2340 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 1.4 W, a collector current of 3 A, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.
40 V
200
R-PDSO-F4
NOT SPECIFIED
1.4 W
FLAT
2STN2540-A
2STN2540-A by STMicroelectronics is a PNP BJT transistor with 40V VCE, 5A IC, and 1.6W power dissipation. Ideal for switching applications in small outline packages due to its high DC current gain of 50 (hFE). The Gull Wing terminal form and matte tin finish make it suitable for surface mount designs.
5 A
50
STN690A
STN690A by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
90
NPN
2STF1550
2STF1550 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
50 V
2STF1340
2STF1340 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 3A, and operates at temperatures up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.
180
R-PSSO-F3
3
DCP69-16-13
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
1 A
17 pF
20 V
100
-55 Cel
2 W
200 MHz
.5 V
ULN2003APWRG4
Texas Instruments
ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.
LOGIC LEVEL COMPATIBLE
.5 A
COMPLEX
MO-153AB
R-PDSO-G16
e4
7
16
Nickel/Palladium/Gold (Ni/Pd/Au)
STN878
STN878 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector currents up to 5 A. Ideal for efficient power management in electronic circuits.
70
BULB7216T4
BULB7216T4 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for compact electronic designs with surface mount capabilities.
700 V
TO-263AB
245
80 W
FZT957QTC
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;
23 pF
300 V
3 W
AEC-Q101; IATF 16949; MIL-STD-202
Matte Tin (Sn)
85 MHz
.24 V
BST15,115
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .2 A;
.2 A
200 V
1 W
TIN
15 MHz
BST16,115
DCP69-25-13
160
MJB41CT4
Onsemi
MJB41CT4 by Onsemi is a NPN BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. Its GULL WING terminals make it suitable for surface mount designs in various electronic devices.
6 A
100 V
15
e0
235
65 W
Tin/Lead (Sn/Pb)
3 MHz
MJB41C
MJB41C by Onsemi is a NPN BJT transistor with 65W power dissipation, 100V collector-emitter voltage, and 6A collector current. It is used for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150 °C, it offers a transition frequency of 3MHz for efficient performance.
MJD31CRL
MJD31CRL by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V collector-emitter voltage, and 3A collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 140 °C. Suitable for surface mount assembly with Gull Wing terminals.
10
140 Cel
AMPLIFIER
MJD32CRL
MJD32CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 140 °C. This Gull Wing package with tin-lead finish is surface mountable and offers a transition frequency of 3MHz.
TIN LEAD
DXT13003DK-13
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR;
1.5 A
450 V
DARLINGTON WITH BUILT-IN DIODE
5
TO-252
4 MHz
BUB323ZT4
BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.
10 A
350 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
500
175 Cel
150 W
2 MHz
BUB323Z
BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.
-65 Cel
NCV1413BDR2
NCV1413BDR2 by Onsemi is a NPN BJT transistor for switching applications. It has a min hFE of 1000, max VCE of 50V, and max IC of 0.5A. This surface-mount transistor comes in a small outline package with 16 terminals and Gull Wing form factor, ideal for compact electronic designs.
1000
STF715
STF715 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max collector-emitter voltage of 80V and a power dissipation of 1.4W. It operates efficiently at up to 150 °C with a min DC current gain (hFE) of 40. This compact surface mount transistor is ideal for various electronic circuits.
80 V
40
50 MHz
STN715
STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.
STN888
STN888 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 5 A. It operates at up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.
STN749
STN749 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 25 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.
25 V
STD1805T4
STD1805T4 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector current of 5A, and operates up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
20
TO-252AA
150 MHz
STN1802
STN1802 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for compact electronic designs with surface mount capabilities.
STD790AT4
STD790AT4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector currents of 3A. Its compact surface mount design ensures efficient performance in electronic circuits.
MJD112RL
MJD112RL by Onsemi is a NPN BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 20W, hFE of 200, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 2A and max voltage of 100V.
2 A
20 W
25 MHz
MJD128T4
MJD128T4 by Onsemi is a PNP Darlington transistor with 120V max collector-emitter voltage, 8A max collector current, and 20W max power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.
8 A
120 V
DARLINGTON
MJD42CRL
MJD42CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications in small outline packages, it operates up to 140 °C with a min hFE of 15.
BCX53H6327XTSA1
Infineon Technologies
BCX53H6327XTSA1 by Infineon Technologies is a PNP BJT transistor with 80V VCEO, 1A IC, and 2W power dissipation. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. This surface-mount transistor in a small outline package is AEC-Q101 compliant.
AEC-Q101
125 MHz
2STN2550
2STN2550 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 5 A, a collector-emitter voltage of 50 V, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.
BULB49DT4
BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
SINGLE WITH BUILT-IN DIODE
MJD200T4G
MJD200T4G by Onsemi is a NPN BJT transistor with 5A max collector current, 13W power dissipation, and 65MHz transition frequency. Ideal for amplifier applications, it features a small outline package, matte tin terminal finish, and can operate up to 150°C.
13 W
65 MHz
MJD200G
The Onsemi MJD200G is a NPN BJT transistor with 5A IC, 25V VCE, and 13W Pd. Ideal for amplifier applications, it has a hFE of 10 and fT of 65MHz. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.
MJD2955G
MJD2955G by Onsemi is a PNP BJT transistor with 60V VCE, 10A IC, and 20W power dissipation. Ideal for amplifier applications, it has a hFE of 5 and operates up to 150°C. This Gull Wing package with matte tin finish is surface mountable and offers a transition frequency of 2MHz.
2STBN15D100T4
2STBN15D100T4 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 12A, and min DC current gain of 750. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.
12 A
750
70 W
MJD44H11T5
The Onsemi MJD44H11T5 is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150 °C. Its Gull Wing terminals make it suitable for surface mount designs in various electronic systems.
BUB323ZG
BUB323ZG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. With a max power dissipation of 150W and max collector-emitter voltage of 350V, it operates b/w -65 to 175°C. This surface-mount transistor has a min DC current gain of 500 and can handle up to 10A collector current.
BF720T3G
BF720T3G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a max power dissipation of 1.5W in a small outline package suitable for surface mount technology.
.1 A
TO-261AA
1.5 W
60 MHz
MC1413BDG
MC1413BDG by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 1000.
-40 Cel
MJB41CG
MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.
MJD18002D2T4G
MJD18002D2T4G by Onsemi is a NPN BJT transistor with 450V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. With an hFE of 6 and fT of 13MHz, this transistor operates b/w -65 °C to +150°C.
FREE WHEELING DIODE
6
50 W
Tin (Sn)
13 MHz
MJD3055G
MJD3055G by Onsemi is a NPN BJT transistor with 60V VCE, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of 5, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.
MJD350G
MJD350G by Onsemi is a PNP BJT transistor with 300V VCE, 0.5A IC, and 15W power dissipation. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers a min hFE of 30 and tin finish on single terminal.
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