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MJD200G

Onsemi

MJD200G by Onsemi

The Onsemi MJD200G is a NPN BJT transistor with 5A IC, 25V VCE, and 13W Pd. Ideal for amplifier applications, it has a hFE of 10 and fT of 65MHz. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.

Median Price

$0.698

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,349 parts In-Stock

1+ parts

$0.395

100+ parts

$0.273

1k+ parts

$0.242

10k+ parts

$0.224

2,349

$0.395

$0.273

$0.242

$0.224

Mouser Electronics

USA . 158 parts In-Stock

1+ parts

$1.000

100+ parts

$0.372

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-

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158

$1.000

$0.372

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DigiKey

USA . 111 parts In-Stock

1+ parts

$1.000

100+ parts

$0.426

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-

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111

$1.000

$0.426

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Chip1Stop

Japan . 3,159 parts In-Stock

1+ parts

-

100+ parts

$0.290

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$0.241

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$0.220

3,159

-

$0.290

$0.241

$0.220

Master Electronics

USA . 3,150 parts In-Stock

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3,150

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Verical

USA . 3,058 parts In-Stock

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$1.317

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$0.946

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3,058

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$1.317

$0.946

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Rochester

USA . 91 parts In-Stock

1+ parts

-

100+ parts

$0.270

1k+ parts

$0.224

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$0.200

91

-

$0.270

$0.224

$0.200

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 758 parts In-Stock

1+ parts

$0.147

100+ parts

$0.154

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$0.146

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758

$0.147

$0.154

$0.146

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Digiode

USA . 1,765 parts In-Stock

1+ parts

$0.211

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1,765

$0.211

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Nova Conductors

Japan . 600 parts In-Stock

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$0.299

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600

$0.299

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Flip Electronics

USA . 23,025 parts In-Stock

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Vyrian

USA . 4,076 parts In-Stock

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ComSIT Distribution GmbH

Germany . 482 parts In-Stock

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482

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Prism Electronics

USA . 222 parts In-Stock

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PC Components Company LLC

USA . 88 parts In-Stock

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88

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Bristol Electronics

USA . 88 parts In-Stock

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88

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Distributors (Availability)

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Corohmni

South Africa . 374 parts In-Stock

1+ parts

$0.147

100+ parts

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374

$0.147

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Semicontronic

India . 1,870 parts In-Stock

1+ parts

$0.189

100+ parts

$0.184

1k+ parts

$0.183

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1,870

$0.189

$0.184

$0.183

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Ampacity Inc.

Singapore . 1,645 parts In-Stock

1+ parts

$0.189

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1,645

$0.189

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Corphita

USA . 64 parts In-Stock

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$0.200

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64

$0.200

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Continental Prestige Electronics

USA . 6,534 parts In-Stock

1+ parts

$0.299

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$0.293

6,534

$0.299

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$0.293

Argo Parts USA

USA . 1,247 parts In-Stock

1+ parts

$0.299

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$0.290

1,247

$0.299

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$0.290

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.299

100+ parts

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$0.284

10k+ parts

$0.278

100

$0.299

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$0.284

$0.278

Aztec Data Supply Inc.

USA . 322 parts In-Stock

1+ parts

$1.424

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322

$1.424

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Kepictronics

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 16,941 parts In-Stock

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Lixinc

USA . 16,873 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 13,817 parts In-Stock

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TANS Electronics

Latvia . 7,089 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,614 parts In-Stock

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Problanco Electronics

Mexico . 3,959 parts In-Stock

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SupplyDigital Components

Austria . 2,514 parts In-Stock

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Kulean Microsystems

USA . 2,024 parts In-Stock

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Authorized Procurement Solutions

USA . 1,650 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

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$71.128

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$71.128

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$71.128

500

-

$71.128

$71.128

$71.128

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

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100+ parts

$71.128

1k+ parts

$71.128

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$71.128

500

-

$71.128

$71.128

$71.128

UHIMA Technologies

Türkiye . 208 parts In-Stock

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Overview

Unlock the power of innovation with the MJD200G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for amplifier applications. With a maximum power dissipation of 13W and a maximum collector current of 5A, this NPN transistor offers unmatched performance and reliability. Its small outline package, high transition frequency, and matte tin terminal finish make it ideal for various electronic projects. Trust Onsemi to provide you with the tools you need to bring your designs to life. Elevate your creations with the MJD200G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection to the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and have good switching capabilities.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits and simplifies the design.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly.

Maximum Power Dissipation (Abs): 13 W

High power dissipation capability ensures reliable operation even under heavy loads.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without degradation in performance.

Maximum Collector-Emitter Voltage: 25 V

Suitable for various voltage requirements in amplifier circuits.

Maximum Collector Current (IC): 5 A

Capable of handling high current loads for amplification tasks.

Nominal Transition Frequency (fT): 65 MHz

High transition frequency ensures fast signal switching, important in amplification circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD200G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD200G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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