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MJD243T4G

Onsemi

MJD243T4G by Onsemi

MJD243T4G by Onsemi is a NPN BJT transistor with 100V VCEO, 4A IC, and 12.5W Ptot. Ideal for amplifier applications, it has a hFE of 15 min and operates up to 150°C. This surface-mount device in a small outline package is designed for high-speed switching with a transition frequency of 40MHz.

Median Price

$0.522

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,000 parts In-Stock

1+ parts

$1.085

100+ parts

$0.405

1k+ parts

$0.288

10k+ parts

$0.259

5,000

$1.085

$0.405

$0.288

$0.259

Mouser Electronics

USA . 8,408 parts In-Stock

1+ parts

$1.130

100+ parts

$0.408

1k+ parts

$0.321

10k+ parts

-

8,408

$1.130

$0.408

$0.321

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DigiKey

USA . 6,065 parts In-Stock

1+ parts

$1.130

100+ parts

$0.464

1k+ parts

$0.326

10k+ parts

$0.255

6,065

$1.130

$0.464

$0.326

$0.255

Newark

USA . 596 parts In-Stock

1+ parts

$1.230

100+ parts

$0.562

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$0.424

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-

596

$1.230

$0.562

$0.424

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Chip1Stop

Japan . 5,112 parts In-Stock

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$0.399

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$0.257

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5,112

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$0.399

$0.257

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Avnet

USA . 5,000 parts In-Stock

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Verical

USA . 5,000 parts In-Stock

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$0.249

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$0.249

Master Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.449

1k+ parts

$0.326

10k+ parts

$0.239

5,000

-

$0.449

$0.326

$0.239

EBV Elektronik

Germany . 2,500 parts In-Stock

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2,500

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Farnell

UK . 746 parts In-Stock

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$0.350

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$0.239

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746

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$0.350

$0.239

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Element14

Singapore . 746 parts In-Stock

1+ parts

-

100+ parts

$0.596

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$0.408

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746

-

$0.596

$0.408

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Rochester

USA . 410 parts In-Stock

1+ parts

-

100+ parts

$0.323

1k+ parts

$0.268

10k+ parts

$0.239

410

-

$0.323

$0.268

$0.239

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,207 parts In-Stock

1+ parts

$0.251

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$0.251

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Nova Conductors

Japan . 550 parts In-Stock

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$0.354

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550

$0.354

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Flip Electronics

USA . 200,000 parts In-Stock

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IBS Electronics

USA . 20,000 parts In-Stock

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$0.630

1k+ parts

$0.457

10k+ parts

$0.335

20,000

-

$0.630

$0.457

$0.335

NAC Semi

USA . 5,000 parts In-Stock

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$0.455

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$0.455

Vyrian

USA . 3,942 parts In-Stock

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3,942

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Bristol Electronics

USA . 2,038 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 539 parts In-Stock

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539

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ComSIT Distribution GmbH

Germany . 510 parts In-Stock

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510

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Connect4Technologies Inc.

Canada . 425 parts In-Stock

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Prism Electronics

USA . 4 parts In-Stock

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4

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,026 parts In-Stock

1+ parts

$0.196

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4,026

$0.196

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Corohmni

South Africa . 331 parts In-Stock

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$0.230

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331

$0.230

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Corphita

USA . 2,125 parts In-Stock

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$0.238

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$0.238

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Aranea Global

USA . 500 parts In-Stock

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$0.347

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$0.333

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500

$0.347

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$0.333

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Argo Parts USA

USA . 4,068 parts In-Stock

1+ parts

$0.354

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$0.343

4,068

$0.354

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$0.343

Continental Prestige Electronics

USA . 1,790 parts In-Stock

1+ parts

$0.487

100+ parts

$0.314

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$0.207

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1,790

$0.487

$0.314

$0.207

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Aztec Data Supply Inc.

USA . 594 parts In-Stock

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$0.654

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594

$0.654

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Perfect Parts

USA . 97,532 parts In-Stock

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97,532

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,299 parts In-Stock

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Kepictronics

USA . 17,500 parts In-Stock

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Lixinc

USA . 16,049 parts In-Stock

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Kulean Microsystems

USA . 8,193 parts In-Stock

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Microchip USA

USA . 6,161 parts In-Stock

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SupplyDigital Components

Austria . 4,042 parts In-Stock

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TANS Electronics

Latvia . 3,106 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,409 parts In-Stock

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Problanco Electronics

Mexico . 1,288 parts In-Stock

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UHIMA Technologies

Türkiye . 863 parts In-Stock

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Overview

Unleash the power of innovation with the MJD243T4G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled performance and reliability for all your amplifier applications. With a maximum collector-emitter voltage of 100V and a maximum collector current of 4A, this NPN transistor delivers exceptional efficiency and durability. Say goodbye to compromises and hello to seamless functionality with the MJD243T4G - a game-changer in the world of electronic components. Elevate your projects to new heights with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation properties and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in amplifier circuits.

Maximum Operating Temperature: 150 °C

High operating temperature allows for reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides flexibility in circuit design and allows for handling higher voltages.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle higher currents, suitable for power amplification applications.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for efficient amplification of high-frequency signals, making this transistor suitable for amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD243T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD243T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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