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MJD210

Onsemi

MJD210 by Onsemi

MJD210 by Onsemi is a PNP BJT with VCEsat of 1.8V, hFE of 10, and IC of 5A. Ideal for power applications in small outline packages due to its high power dissipation and low collector-emitter voltage. Suitable for surface mount designs requiring high-speed switching up to 65MHz.

Median Price

$1.710

Lifecycle Status

Suppliers In-Stock

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TEDSS.com

USA . 1,800 parts In-Stock

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American Microsemiconductor Inc.

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Digiode

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Semi Source

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Nova Conductors

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NPI Materials, Inc.

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PC Components Company LLC

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A2Z Electronics, Inc.

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MISTER SPROCKETS

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Corohmni

South Africa . 151 parts In-Stock

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IDEA Electronic Components Group

UK . 261 parts In-Stock

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$1.378

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MKK Technologies

India . 281 parts In-Stock

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DigiPath Technology Company

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AZTECH Wire

Italy . 602 parts In-Stock

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Metaverse IC Inc.

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RC Electronics

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Kepictronics

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Continental Prestige Electronics

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Kulean Microsystems

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TANS Electronics

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Argo Parts USA

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Problanco Electronics

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Parana Technologies

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Authorized Procurement Solutions

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Perfect Parts

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UHIMA Technologies

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Aranea Global

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Giza Technologies, Inc.

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Overview

Looking for high-quality Power Bipolar Junction Transistors that offer exceptional performance and reliability? Look no further than the MJD210 by Onsemi. With a maximum VCEsat of 1.8V and a maximum collector current of 5A, this PNP transistor is perfect for a wide range of applications. From power supplies to motor control, the MJD210 delivers superior functionality and efficiency. Trust Onsemi's reputation for excellence and choose the MJD210 for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplifies circuit design by using just one transistor in the package.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and facilitating automated assembly.

Maximum VCEsat: 1.8 V

Low VCEsat means lower power dissipation and higher efficiency in switching applications.

Maximum Power Dissipation (Abs): 12.5 W

Handles high power levels, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 25 V

Can handle higher voltage levels, making it versatile for various applications.

Maximum Collector Current (IC): 5 A

Capable of handling higher currents, suitable for power amplification and switching applications.

Nominal Transition Frequency (fT): 65 MHz

High transition frequency allows for faster switching speeds and high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD210 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

120 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.4 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

MJD210 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-01-603-6725, 5961016036725

NIIN

016036725

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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