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MJD210RLG

Onsemi

MJD210RLG by Onsemi

MJD210RLG by Onsemi is a PNP BJT transistor with 5A IC, 25V VCE, and 12.5W power dissipation. Ideal for amplifier applications, it has a hFE of 10, operates up to 150°C, and features GULL WING terminals in a SMALL OUTLINE package.

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.218

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1

$0.218

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Mouser Electronics

USA . 1,232 parts In-Stock

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$1.000

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$0.407

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$0.304

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$0.229

1,232

$1.000

$0.407

$0.304

$0.229

Newark

USA . 1,088 parts In-Stock

1+ parts

$1.030

100+ parts

$0.419

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$0.322

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1,088

$1.030

$0.419

$0.322

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DigiKey

USA . 544 parts In-Stock

1+ parts

$1.060

100+ parts

$0.431

1k+ parts

$0.332

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$0.240

544

$1.060

$0.431

$0.332

$0.240

Rochester

USA . 24,666 parts In-Stock

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-

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$0.272

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$0.225

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$0.201

24,666

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$0.272

$0.225

$0.201

Verical

USA . 11,285 parts In-Stock

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11,285

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$0.251

Chip1Stop

Japan . 1,800 parts In-Stock

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$0.229

1,800

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$0.229

Farnell

UK . 1,298 parts In-Stock

1+ parts

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$0.350

1k+ parts

$0.266

10k+ parts

$0.197

1,298

-

$0.350

$0.266

$0.197

Element14

Singapore . 1,298 parts In-Stock

1+ parts

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100+ parts

$0.589

1k+ parts

$0.332

10k+ parts

$0.326

1,298

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$0.589

$0.332

$0.326

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 397 parts In-Stock

1+ parts

$0.211

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397

$0.211

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Nova Conductors

Japan . 66 parts In-Stock

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$0.266

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$0.266

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Vyrian

USA . 7,888 parts In-Stock

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NAC Semi

USA . 3,600 parts In-Stock

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$0.295

3,600

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$0.295

Bristol Electronics

USA . 2,069 parts In-Stock

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2,069

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Atlantic Semiconductor

USA . 2,069 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,800 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,800 parts In-Stock

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1,800

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IBS Electronics

USA . 1,800 parts In-Stock

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$0.309

1,800

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$0.309

Cyclops Electronics Ltd

UK . 1,763 parts In-Stock

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Flip Electronics

USA . 645 parts In-Stock

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645

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 7,866 parts In-Stock

1+ parts

$0.152

100+ parts

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7,866

$0.152

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Corohmni

South Africa . 413 parts In-Stock

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$0.179

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413

$0.179

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Corphita

USA . 654 parts In-Stock

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$0.200

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654

$0.200

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Component Stockers USA

USA . 31,444 parts In-Stock

1+ parts

$0.230

100+ parts

$0.210

1k+ parts

$0.190

10k+ parts

$0.190

31,444

$0.230

$0.210

$0.190

$0.190

Argo Parts USA

USA . 3,523 parts In-Stock

1+ parts

$0.266

100+ parts

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$0.259

3,523

$0.266

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$0.259

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.266

100+ parts

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1k+ parts

$0.253

10k+ parts

$0.248

100

$0.266

-

$0.253

$0.248

Formix International (Excess)

India . 65,064 parts In-Stock

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65,064

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

USA . 27,866 parts In-Stock

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$0.270

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Metaverse IC Inc.

Canada . 23,600 parts In-Stock

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TANS Electronics

Latvia . 8,078 parts In-Stock

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Lixinc

USA . 7,684 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,074 parts In-Stock

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Kulean Microsystems

USA . 4,445 parts In-Stock

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SupplyDigital Components

Austria . 3,167 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 1,974 parts In-Stock

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Kepictronics

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Assy Fe

Spain . 1,800 parts In-Stock

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iodParts Technologies Inc.

India . 1,762 parts In-Stock

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$0.347

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1,762

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Glotronic Ltd.

UK . 1,440 parts In-Stock

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Perfect Parts

USA . 647 parts In-Stock

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UHIMA Technologies

Türkiye . 5 parts In-Stock

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GreenTree Electronics

Israel . 4 parts In-Stock

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Overview

Upgrade your power management system with the MJD210RLG by Onsemi. This high-quality Power Bipolar Junction Transistor offers reliability and efficiency, making it ideal for amplifier applications. With a compact package shape and gull wing terminal form, this PNP transistor is designed for easy surface mounting. Experience the benefits of its maximum power dissipation of 12.5W and maximum collector current of 5A, providing excellent performance in various electronic devices. Trust Onsemi's reputation for excellence and choose the MJD210RLG for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuit designs and enhances compatibility with other components.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity during installation and maintenance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable performance and high-quality audio output.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on circuit boards, saving space and improving overall design efficiency.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard circuit board layouts, enhancing ease of installation and integration.

Terminal Form: GULL WING

Gull wing terminals offer reliable electrical connections and facilitate efficient soldering during assembly.

Maximum Power Dissipation (Abs): 12.5 W

High power dissipation capability allows for reliable performance even under demanding operating conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and improves overall system compactness.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain ensures stable and consistent amplification of input signals for reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range enables the transistor to function effectively in a variety of environments and conditions.

Maximum Collector-Emitter Voltage: 25 V

High collector-emitter voltage rating allows for safe operation with higher voltage levels, enhancing versatility in circuit design.

Transistor Element Material: SILICON

Silicon material provides high conductivity and reliability for the transistor, ensuring long-term performance and durability.

Maximum Collector Current (IC): 5 A

High maximum collector current rating enables the transistor to handle large current loads without compromising performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers excellent solderability and conductivity, ensuring reliable connections for optimal performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection processes, reducing the risk of errors and improving overall efficiency.

Case Connection: COLLECTOR

Collector case connection type enhances thermal conductivity and dissipation, improving overall performance and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Quick reflow time allows for efficient assembly and soldering processes, reducing overall manufacturing time and cost.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure and reliable solder joints, preventing damage and improving overall product quality.

Nominal Transition Frequency (fT): 65 MHz

High nominal transition frequency allows for fast signal switching and reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD210RLG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD210RLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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