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MJD200

Onsemi

MJD200 by Onsemi

MJD200 by Onsemi is a NPN BJT transistor with 5A IC, 25V VCE, and 13W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 150 °C. This Gull Wing package with tin-lead finish is surface mountable and features a small outline design.

Median Price

$2.802

Lifecycle Status

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14

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1k+

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Master Electronics

USA . 695 parts In-Stock

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$1.300

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$0.261

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Verical

USA . 680 parts In-Stock

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$4.304

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Vyrian

USA . 6,031 parts In-Stock

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Component Electronics Inc.

Canada . 30 parts In-Stock

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Digiode

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Anansix

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PC Components Company LLC

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Sogenti Electronics

Canada . 336 parts In-Stock

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Bristol Electronics

USA . 305 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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ComSIT Distribution GmbH

Germany . 150 parts In-Stock

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Prism Electronics

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Semi Source

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Mil-Aero Solutions, Inc.

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Corohmni

South Africa . 55 parts In-Stock

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IDEA Electronic Components Group

UK . 1,397 parts In-Stock

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$1.603

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$1.442

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MKK Technologies

India . 754 parts In-Stock

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DigiPath Technology Company

USA . 754 parts In-Stock

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RC Electronics

USA . 30,000 parts In-Stock

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$0.460

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Kepictronics

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Authorized Procurement Solutions

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SupplyDigital Components

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Corphita

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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Perfect Parts

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Supply Digital

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Parana Technologies

USA . 771 parts In-Stock

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Component Stockers USA

USA . 641 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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UHIMA Technologies

Türkiye . 13 parts In-Stock

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Overview

Unleash the power of innovation with the MJD200 by Onsemi, a top-quality Power Bipolar Junction Transistor designed to amplify performance in a wide range of applications. With its NPN polarity, small outline package style, and high collector current capacity, this transistor delivers unrivaled efficiency and reliability. Elevate your projects to new heights with the MJD200 - where quality meets value and innovation reigns supreme.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation, protection, and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and widely applicable.

Configuration: SINGLE

Having a single configuration simplifies the design and integration of the transistor into circuits, making it easier to work with.

Transistor Application: AMPLIFIER

Being specifically designed for amplifier applications ensures optimal performance and reliability in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and effort during manufacturing.

Maximum Power Dissipation (Abs): 13 W

The high power dissipation capacity of 13W enables the transistor to handle larger loads and operate in high-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can perform reliably in a wide range of environments and conditions.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25V allows for safe and stable operation within this voltage range, ensuring protection against voltage spikes.

Maximum Collector Current (IC): 5 A

With a high maximum collector current of 5A, this transistor can handle significant current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 65 MHz

The high nominal transition frequency of 65MHz indicates fast switching speed and high-frequency performance, ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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