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MJD210RL

Onsemi

MJD210RL by Onsemi

MJD210RL by Onsemi is a PNP BJT transistor with 25V VCEO, 5A IC, and 13W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 140°C. This surface-mount device in a small outline package offers high performance in a compact design.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,400 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

15,400

-

$0.238

$0.197

$0.176

DigiKey

USA . 15,400 parts In-Stock

1+ parts

-

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$0.300

15,400

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$0.300

Verical

USA . 15,400 parts In-Stock

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$0.220

15,400

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$0.220

Distributors (In-Stock)

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Digiode

USA . 1,538 parts In-Stock

1+ parts

$0.185

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1,538

$0.185

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Vyrian

USA . 1,365 parts In-Stock

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$0.195

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1,365

$0.195

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$1.540

100+ parts

$1.150

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$1.000

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-

5

$1.540

$1.150

$1.000

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Bristol Electronics

USA . 3,240 parts In-Stock

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3,240

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ACDS - Activité Composants Distribution Service

France . 2,188 parts In-Stock

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2,188

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Inventory MP

USA . 1,799 parts In-Stock

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1,799

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Atlantic Semiconductor

USA . 1,441 parts In-Stock

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1,441

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Electronic Expediters

USA . 621 parts In-Stock

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621

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Semi Source

USA . 605 parts In-Stock

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605

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Resion

USA . 271 parts In-Stock

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271

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Legend Electronics Inc.

USA . 75 parts In-Stock

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75

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Classic Components Corporation

USA . 3 parts In-Stock

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3

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Distributors (Availability)

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Corphita

USA . 439 parts In-Stock

1+ parts

$0.176

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439

$0.176

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Corohmni

South Africa . 322 parts In-Stock

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$0.195

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322

$0.195

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Continental Prestige Electronics

USA . 15,900 parts In-Stock

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$0.176

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15,900

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$0.176

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TANS Electronics

Latvia . 8,346 parts In-Stock

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8,346

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Assy Fe

Spain . 7,200 parts In-Stock

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Perfect Parts

USA . 4,901 parts In-Stock

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SupplyDigital Components

Austria . 3,912 parts In-Stock

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Problanco Electronics

Mexico . 3,877 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,188 parts In-Stock

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Glotronic Ltd.

UK . 1,750 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,707 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,707 parts In-Stock

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Kulean Microsystems

USA . 1,621 parts In-Stock

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1,621

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Kepictronics

USA . 1,213 parts In-Stock

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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484

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Overview

Unleash the power of innovation with the MJD210RL by Onsemi, a top-tier manufacturer known for quality and reliability. This Power Bipolar Junction Transistor (BJT) is a game-changer in the amplifier industry, offering unparalleled performance and efficiency. With its PNP configuration and high collector current, this product is perfect for a wide range of applications. Experience the value and benefits that this transistor brings, from its compact design to its impressive power dissipation capabilities. Elevate your projects with the MJD210RL and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides protection for the transistor components.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: AMPLIFIER

Optimized for amplifier circuits.

Surface Mount: YES

Easy to mount on circuit boards for streamlined manufacturing processes.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic layouts.

Terminal Form: GULL WING

Provides secure soldering connections for reliable performance.

Maximum Power Dissipation (Abs): 13 W

High power handling capability for demanding applications.

Minimum DC Current Gain (hFE): 10

Ensures stable and consistent amplification performance.

Maximum Operating Temperature: 140 °C

Suitable for operation in various temperature environments.

Maximum Collector-Emitter Voltage: 25 V

Can withstand high voltage levels.

Transistor Element Material: SILICON

Reliable and efficient semiconductor material for transistor operation.

Maximum Collector Current (IC): 5 A

Capable of handling high current loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides corrosion resistance and solderability.

Terminal Position: SINGLE

Simplified terminal connections for easy circuit integration.

Case Connection: COLLECTOR

Clear identification of the case connection for proper circuit layout.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow processing time for efficient manufacturing.

Peak Reflow Temperature °C: 235

Suitable reflow temperature for secure solder joints.

Nominal Transition Frequency (fT): 65 MHz

High frequency capability for fast signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD210RL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD210RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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