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MJD200RL

Onsemi

MJD200RL by Onsemi

MJD200RL by Onsemi is a NPN BJT transistor with 5A IC, 25V VCE, and 13W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 150 °C. This Gull Wing package with tin-lead finish is surface mountable and features a small outline design.

Median Price

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Lifecycle Status

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13

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1k+

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EMSNET

USA . 1,800 parts In-Stock

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North Shore Components

USA . 1,668 parts In-Stock

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Mil-Aero Solutions, Inc.

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Digiode

USA . 1,494 parts In-Stock

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Electronics Depot

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R&J Components

USA . 1,400 parts In-Stock

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Prism Electronics

USA . 1,327 parts In-Stock

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PC Components Company LLC

USA . 1,249 parts In-Stock

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Bristol Electronics

USA . 1,001 parts In-Stock

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Vyrian

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DF Sales Co.

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DF Sales Co.

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Semi Source

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Benley Electronics

USA . 1 parts In-Stock

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Kepictronics

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Perfect Parts

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GreenTree Electronics

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ChipTracer

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UHIMA Technologies

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Corphita

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Corohmni

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Overview

Upgrade your amplification game with the MJD200RL by Onsemi. Crafted with precision and expertise, this power bipolar junction transistor offers top-notch performance and reliability for your amplifier applications. With a maximum power dissipation of 13W and a maximum collector current of 5A, this NPN transistor delivers unmatched efficiency and power handling capabilities. The small outline package design makes it easy to integrate into your circuit layout, while the high DC current gain ensures optimal signal amplification. Trust in Onsemi's reputation for quality and innovation and experience the difference with the MJD200RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits and are easy to work with in most electronic designs.

Configuration: SINGLE

Single configuration transistors are simple to use and suitable for basic amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable and optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and enabling efficient design layouts.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and mount on PCBs, ensuring compatibility with standard manufacturing processes.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and facilitate easy soldering during assembly.

Maximum Power Dissipation (Abs): 13 W

With a high maximum power dissipation of 13W, this transistor can handle heavy loads without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact designs in electronic circuits.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures consistent and stable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures stability and reliability in various operating conditions.

Maximum Collector-Emitter Voltage: 25 V

High maximum collector-emitter voltage rating of 25V allows for safe operation in circuits with higher voltages.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability for the transistor element, ensuring long-lasting performance.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliable connections in electronic assemblies.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits, ensuring ease of use.

Case Connection: COLLECTOR

Case connection at the collector terminal provides efficient heat dissipation, ensuring thermal stability during operation.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C allows for reliable soldering during assembly processes, ensuring secure connections.

Nominal Transition Frequency (fT): 65 MHz

With a high nominal transition frequency of 65MHz, this transistor can handle faster switching speeds, essential for certain applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD200RL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD200RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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