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MJD210TF

Onsemi

MJD210TF by Onsemi

The Onsemi MJD210TF is a PNP BJT with 25V VCEO, 5A IC, and 65MHz fT. Ideal for power applications, it has a max power dissipation of 12.5W in a small outline package suitable for surface mount technology.

Median Price

$0.387

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,921 parts In-Stock

1+ parts

-

100+ parts

$0.344

1k+ parts

$0.285

10k+ parts

$0.255

14,921

-

$0.344

$0.285

$0.255

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.387

10k+ parts

$0.318

12,000

-

-

$0.387

$0.318

DigiKey

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

-

4,000

-

-

$0.430

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.251

100+ parts

-

1k+ parts

-

10k+ parts

-

900

$0.251

-

-

-

Digiode

USA . 2,235 parts In-Stock

1+ parts

$0.268

100+ parts

-

1k+ parts

-

10k+ parts

-

2,235

$0.268

-

-

-

Bristol Electronics

USA . 1,376 parts In-Stock

1+ parts

$1.080

100+ parts

$0.432

1k+ parts

$0.302

10k+ parts

$0.281

1,376

$1.080

$0.432

$0.302

$0.281

Vyrian

USA . 9,861 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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9,861

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 1,376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,376

-

-

-

-

Dan-Mar Components

USA . 1,376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,376

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 177 parts In-Stock

1+ parts

$0.230

100+ parts

-

1k+ parts

-

10k+ parts

-

177

$0.230

-

-

-

Continental Prestige Electronics

USA . 4,106 parts In-Stock

1+ parts

$0.251

100+ parts

-

1k+ parts

-

10k+ parts

$0.246

4,106

$0.251

-

-

$0.246

Argo Parts USA

USA . 3,892 parts In-Stock

1+ parts

$0.251

100+ parts

-

1k+ parts

-

10k+ parts

$0.244

3,892

$0.251

-

-

$0.244

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.251

100+ parts

-

1k+ parts

$0.239

10k+ parts

$0.234

100

$0.251

-

$0.239

$0.234

Corphita

USA . 1,735 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

-

1,735

$0.254

-

-

-

Component Stockers USA

USA . 4,844 parts In-Stock

1+ parts

$0.290

100+ parts

$0.270

1k+ parts

$0.250

10k+ parts

$0.250

4,844

$0.290

$0.270

$0.250

$0.250

Ampacity Inc.

Singapore . 10,015 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

-

10,015

$0.426

-

-

-

RC Electronics

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

$0.260

1k+ parts

$0.250

10k+ parts

$0.240

60,000

-

$0.260

$0.250

$0.240

Metaverse IC Inc.

Canada . 36,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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36,530

-

-

-

-

Perfect Parts

USA . 8,556 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,556

-

-

-

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Kulean Microsystems

USA . 7,976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,976

-

-

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-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,000

-

-

-

-

Problanco Electronics

Mexico . 3,682 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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3,682

-

-

-

-

A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,000

-

-

-

-

TANS Electronics

Latvia . 1,946 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,946

-

-

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Glotronic Ltd.

UK . 1,800 parts In-Stock

1+ parts

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100+ parts

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1,800

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-

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Supply Digital

USA . 1,485 parts In-Stock

1+ parts

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100+ parts

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1,485

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-

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Assy Fe

Spain . 1,400 parts In-Stock

1+ parts

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100+ parts

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1,400

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-

-

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UHIMA Technologies

Türkiye . 721 parts In-Stock

1+ parts

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100+ parts

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721

-

-

-

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SupplyDigital Components

Austria . 156 parts In-Stock

1+ parts

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100+ parts

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156

-

-

-

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Kepictronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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100

-

-

-

-

Overview

Upgrade your power control systems with the MJD210TF by Onsemi, a top-quality Power BJT designed to deliver reliable performance in a range of applications. With a maximum power dissipation of 12.5W and a maximum collector current of 5A, this PNP transistor offers exceptional value for customers seeking efficient power management solutions. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and elevate your projects with the MJD210TF today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP transistors are suitable for applications requiring current sourcing, making this product versatile in different circuit designs.

Configuration: SINGLE

Single configuration transistors are easy to work with and integrate into circuit designs.

Surface Mount: YES

Surface mount capability allows for compact and space-saving designs, ideal for modern electronics.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to handle and mount the transistor in different configurations.

Maximum Power Dissipation (Abs): 12.5 W

High power dissipation rating ensures the transistor can handle heavy loads without overheating.

Minimum DC Current Gain (hFE): 10

High DC current gain allows for accurate amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures the transistor can function reliably in different environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

The high collector-emitter voltage rating provides flexibility in circuit design for various voltage requirements.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling large current flows in circuits without performance degradation.

Nominal Transition Frequency (fT): 65 MHz

High transition frequency enables the transistor to operate at high frequencies, suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD210TF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD210TF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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