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MJD210T4

Onsemi

MJD210T4 by Onsemi

MJD210T4 by Onsemi is a PNP BJT transistor with 25V max collector-emitter voltage, 5A max collector current, and 13W max power dissipation. Ideal for amplifier applications, it has a small outline package style and operates at up to 150 °C.

Median Price

$0.493

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.395

10k+ parts

$0.352

12,500

-

$0.475

$0.395

$0.352

DigiKey

USA . 12,500 parts In-Stock

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$0.590

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12,500

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$0.590

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Verical

USA . 7,500 parts In-Stock

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$0.493

10k+ parts

$0.440

7,500

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$0.493

$0.440

Distributors (In-Stock)

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Vyrian

USA . 7,006 parts In-Stock

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$0.325

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7,006

$0.325

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Digiode

USA . 5,296 parts In-Stock

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$0.370

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$0.370

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Chip Stock

USA . 23,522 parts In-Stock

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Voyager Components

USA . 20,000 parts In-Stock

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Standard Data Resources

USA . 20,000 parts In-Stock

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R&J Components

USA . 11,230 parts In-Stock

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Electronic Expediters

USA . 11,112 parts In-Stock

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Classic Components Corporation

USA . 7,500 parts In-Stock

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7,500

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ComSIT Distribution GmbH

Germany . 4,905 parts In-Stock

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Prism Electronics

USA . 3,605 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3,000 parts In-Stock

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A2Z Electronics, Inc.

USA . 2,364 parts In-Stock

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2,364

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ACDS - Activité Composants Distribution Service

France . 2,099 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 1,875 parts In-Stock

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1,875

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Bristol Electronics

USA . 1,370 parts In-Stock

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1,370

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Anansix

USA . 990 parts In-Stock

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990

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PC Components Company LLC

USA . 930 parts In-Stock

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930

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BCID Electronics Ltd.

Israel . 408 parts In-Stock

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408

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Semi Source

USA . 325 parts In-Stock

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325

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Legend Electronics Inc.

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 292 parts In-Stock

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$0.325

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292

$0.325

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Corphita

USA . 1,717 parts In-Stock

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$0.351

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1,717

$0.351

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Benley Electronics

USA . 3 parts In-Stock

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$0.750

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3

$0.750

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IDEA Electronic Components Group

UK . 366 parts In-Stock

1+ parts

$1.553

100+ parts

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$1.398

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366

$1.553

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$1.398

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MKK Technologies

India . 1,185 parts In-Stock

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$2.920

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$2.920

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DigiPath Technology Company

USA . 1,185 parts In-Stock

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$2.920

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Kepictronics

USA . 56,000 parts In-Stock

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,363 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Continental Prestige Electronics

USA . 12,500 parts In-Stock

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$0.352

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Perfect Parts

USA . 9,853 parts In-Stock

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SupplyDigital Components

Austria . 5,372 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,145 parts In-Stock

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Kulean Microsystems

USA . 4,943 parts In-Stock

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Assy Fe

Spain . 2,341 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,099 parts In-Stock

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Glotronic Ltd.

UK . 1,679 parts In-Stock

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1,679

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TANS Electronics

Latvia . 1,216 parts In-Stock

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UHIMA Technologies

Türkiye . 280 parts In-Stock

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280

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Problanco Electronics

Mexico . 248 parts In-Stock

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Parana Technologies

USA . 16 parts In-Stock

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$1.857

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Overview

Enhance your amplifier applications with the MJD210T4 by Onsemi, a high-quality Power BJT that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor provides a maximum power dissipation of 13W and a maximum collector current of 5A, ensuring optimal functionality. With a small outline package and Gull Wing terminals, this transistor is easy to install and use, making it the perfect choice for amplifiers. Trust Onsemi for top-notch quality and experience the benefits of superior performance with the MJD210T4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the package lightweight and durable, ensuring long-lasting performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and are suitable for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to use in projects.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimized performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various electronic devices and circuits.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections and make soldering easier during assembly.

No. of Terminals: 2

Minimal number of terminals simplifies circuit design and installation.

Maximum Power Dissipation (Abs): 13 W

High power dissipation capability allows for handling of high power applications with efficiency.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain ensures stable and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

High collector-emitter voltage rating provides protection against voltage spikes and ensures safety in circuit operation.

Transistor Element Material: SILICON

Silicon material is known for its reliability and efficiency in electronic components, ensuring high performance.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling of high current loads with stability and efficiency.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and circuit connections.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation and ensures stable performance under high temperatures.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures safe and efficient soldering during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability ensures reliable soldering and strong mechanical connections.

Nominal Transition Frequency (fT): 65 MHz

High nominal transition frequency enables fast switching and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD210T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD210T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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