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MJD2955T4G

Onsemi

MJD2955T4G by Onsemi

MJD2955T4G by Onsemi is a PNP BJT transistor with 60V VCEO, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of min. 5 and fT of 2MHz. Its Gull Wing terminals make it suitable for surface mount designs.

Median Price

$0.406

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,266 parts In-Stock

1+ parts

$1.100

100+ parts

$0.451

1k+ parts

$0.316

10k+ parts

$0.247

4,266

$1.100

$0.451

$0.316

$0.247

Mouser Electronics

USA . 1,892 parts In-Stock

1+ parts

$1.100

100+ parts

$0.451

1k+ parts

$0.297

10k+ parts

$0.269

1,892

$1.100

$0.451

$0.297

$0.269

Chip1Stop

Japan . 1,540 parts In-Stock

1+ parts

$2.690

100+ parts

$0.740

1k+ parts

$0.509

10k+ parts

-

1,540

$2.690

$0.740

$0.509

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Rochester

USA . 179,053 parts In-Stock

1+ parts

-

100+ parts

$0.311

1k+ parts

$0.258

10k+ parts

$0.230

179,053

-

$0.311

$0.258

$0.230

Verical

USA . 99,019 parts In-Stock

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-

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$0.287

99,019

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$0.287

Future Electronics

Canada . 45,000 parts In-Stock

1+ parts

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$0.305

45,000

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$0.305

Avnet

USA . 5,000 parts In-Stock

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5,000

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Arrow

USA . 2,500 parts In-Stock

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$0.239

2,500

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$0.239

EBV Elektronik

Germany . 2,500 parts In-Stock

1+ parts

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2,500

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Master Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.236

10k+ parts

$0.223

2,500

-

$0.423

$0.236

$0.223

Element14

Singapore . 2,103 parts In-Stock

1+ parts

-

100+ parts

$0.666

1k+ parts

$0.467

10k+ parts

-

2,103

-

$0.666

$0.467

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Farnell

UK . 1,968 parts In-Stock

1+ parts

-

100+ parts

$0.390

1k+ parts

$0.274

10k+ parts

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1,968

-

$0.390

$0.274

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 903 parts In-Stock

1+ parts

$0.241

100+ parts

-

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903

$0.241

-

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Nova Conductors

Japan . 29 parts In-Stock

1+ parts

$0.325

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29

$0.325

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Forefront Electronics and Design

USA . 70 parts In-Stock

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$1.470

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70

$1.470

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IBS Electronics

USA . 222,500 parts In-Stock

1+ parts

-

100+ parts

$0.593

1k+ parts

$0.331

10k+ parts

$0.313

222,500

-

$0.593

$0.331

$0.313

NAC Semi

USA . 175,000 parts In-Stock

1+ parts

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$0.620

175,000

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$0.620

Vyrian

USA . 44,748 parts In-Stock

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44,748

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Cyclops Electronics Ltd

UK . 16,754 parts In-Stock

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16,754

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

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2,500

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SPM Sales

USA . 2,015 parts In-Stock

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2,015

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PC Components Company LLC

USA . 1,679 parts In-Stock

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1,679

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Bristol Electronics

USA . 679 parts In-Stock

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679

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 44,321 parts In-Stock

1+ parts

$0.178

100+ parts

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44,321

$0.178

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Corohmni

South Africa . 333 parts In-Stock

1+ parts

$0.218

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333

$0.218

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Corphita

USA . 1,086 parts In-Stock

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$0.229

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1,086

$0.229

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.325

100+ parts

$0.318

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2,000

$0.325

$0.318

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Argo Parts USA

USA . 1,247 parts In-Stock

1+ parts

$0.325

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10k+ parts

$0.315

1,247

$0.325

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-

$0.315

Aztec Data Supply Inc.

USA . 229 parts In-Stock

1+ parts

$0.608

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229

$0.608

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Benley Electronics

USA . 23 parts In-Stock

1+ parts

$0.750

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23

$0.750

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Perfect Parts

USA . 496,264 parts In-Stock

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496,264

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Continental Prestige Electronics

USA . 172,473 parts In-Stock

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$0.300

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172,473

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$0.300

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Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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88,168

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QUARKTWIN TECHNOLOGY LTD

USA . 19,968 parts In-Stock

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19,968

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GreenTree Electronics

Israel . 16,850 parts In-Stock

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16,850

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Assy Fe

Spain . 8,000 parts In-Stock

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Kulean Microsystems

USA . 7,688 parts In-Stock

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7,688

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SupplyDigital Components

Austria . 5,527 parts In-Stock

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5,527

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Lixinc

USA . 3,449 parts In-Stock

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Eastek

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 2,172 parts In-Stock

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TANS Electronics

Latvia . 141 parts In-Stock

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141

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Enhance your electronic projects with the MJD2955T4G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for applications like amplifiers. Manufactured by Onsemi, known for their superior products, this PNP transistor offers high performance and reliability. With a maximum collector current of 10A and a maximum power dissipation of 20W, this transistor provides exceptional value for your designs. Upgrade your circuitry with the MJD2955T4G and experience enhanced efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration with other PNP components in a circuit, simplifying design and implementation.

Configuration: SINGLE

Simplifies circuit design and ensures straightforward operation.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, providing reliable performance and high-quality amplification.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Allows for easy integration and placement on circuit boards, optimizing space usage.

Terminal Form: GULL WING

Facilitates secure and reliable solder connections during PCB assembly.

Maximum Power Dissipation (Abs): 20 W

Capable of handling high power levels, ensuring efficient operation and performance.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on circuit boards and allows for denser PCB layouts.

Minimum DC Current Gain (hFE): 5

Ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications requiring elevated operating conditions.

Maximum Collector-Emitter Voltage: 60 V

Ensures safe operation within specified voltage limits, protecting the transistor from damage.

Transistor Element Material: SILICON

Provides reliable and consistent performance characteristics, commonly used in electronic components.

Maximum Collector Current (IC): 10 A

Capable of handling high current levels, suitable for power applications and amplification.

Terminal Finish: MATTE TIN

Ensures good solderability and reliable electrical connections during assembly.

Terminal Position: SINGLE

Simplifies PCB layout and connections, ensuring easy integration into circuits.

Case Connection: COLLECTOR

Clearly identifies the connection point, making it easy to integrate into circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient PCB assembly processes without compromising the component's reliability.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes, ensuring reliable connections during assembly.

Nominal Transition Frequency (fT): 2 MHz

Provides high frequency performance, suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD2955T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD2955T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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