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MJD210T4G

Onsemi

MJD210T4G by Onsemi

MJD210T4G by Onsemi is a PNP BJT transistor with 5A IC, 25V VCE, and 13W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 150°C. This surface-mount device in a small outline package is designed for high-speed operation at 65MHz.

Median Price

$0.252

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 60 parts In-Stock

1+ parts

$0.078

100+ parts

$0.078

1k+ parts

$0.078

10k+ parts

-

60

$0.078

$0.078

$0.078

-

Arrow

USA . 4,700 parts In-Stock

1+ parts

$0.227

100+ parts

$0.216

1k+ parts

$0.206

10k+ parts

$0.203

4,700

$0.227

$0.216

$0.206

$0.203

Mouser Electronics

USA . 3,548 parts In-Stock

1+ parts

$0.770

100+ parts

$0.337

1k+ parts

$0.249

10k+ parts

$0.225

3,548

$0.770

$0.337

$0.249

$0.225

DigiKey

USA . 26,835 parts In-Stock

1+ parts

$1.000

100+ parts

$0.407

1k+ parts

$0.282

10k+ parts

$0.216

26,835

$1.000

$0.407

$0.282

$0.216

Rochester

USA . 227,535 parts In-Stock

1+ parts

-

100+ parts

$0.252

1k+ parts

$0.209

10k+ parts

$0.187

227,535

-

$0.252

$0.209

$0.187

Verical

USA . 110,047 parts In-Stock

1+ parts

-

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$0.233

110,047

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$0.233

Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

1+ parts

-

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36,000

-

-

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Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.215

1k+ parts

$0.203

10k+ parts

$0.192

2,500

-

$0.215

$0.203

$0.192

Farnell

UK . 1,210 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.199

10k+ parts

-

1,210

-

$0.254

$0.199

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Element14

Singapore . 1,210 parts In-Stock

1+ parts

-

100+ parts

$1.050

1k+ parts

$0.819

10k+ parts

-

1,210

-

$1.050

$0.819

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,394 parts In-Stock

1+ parts

$0.196

100+ parts

-

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1,394

$0.196

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-

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Vyrian

USA . 116 parts In-Stock

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$0.206

100+ parts

-

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116

$0.206

-

-

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Maritex

Poland . 2,469 parts In-Stock

1+ parts

$0.732

100+ parts

$0.427

1k+ parts

$0.397

10k+ parts

$0.355

2,469

$0.732

$0.427

$0.397

$0.355

Component Electronics Inc.

Canada . 24 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

10k+ parts

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24

$1.540

$1.150

$1.000

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IBS Electronics

USA . 102,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.379

102,500

-

-

-

$0.379

Flip Electronics

USA . 26,000 parts In-Stock

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26,000

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Chip Stock

USA . 23,511 parts In-Stock

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23,511

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NAC Semi

USA . 7,500 parts In-Stock

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$0.411

7,500

-

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$0.411

Cyclops Electronics Ltd

UK . 6,927 parts In-Stock

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6,927

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Bristol Electronics

USA . 6,185 parts In-Stock

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6,185

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Sternenhof Electronics

Switzerland . 5,000 parts In-Stock

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5,000

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Dan-Mar Components

USA . 5,000 parts In-Stock

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5,000

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Tectiva GmbH

Germany . 1,800 parts In-Stock

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1,800

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Microfarads

USA . 1,059 parts In-Stock

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1,059

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Ack Elektronik San.Tic.Ltd.Sti

. 236 parts In-Stock

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236

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 444 parts In-Stock

1+ parts

$0.185

100+ parts

-

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444

$0.185

-

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Corohmni

South Africa . 469 parts In-Stock

1+ parts

$0.206

100+ parts

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469

$0.206

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Continental Prestige Electronics

USA . 140,380 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.247

10k+ parts

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140,380

-

-

$0.247

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RC Electronics

USA . 56,798 parts In-Stock

1+ parts

-

100+ parts

$0.270

1k+ parts

$0.250

10k+ parts

$0.240

56,798

-

$0.270

$0.250

$0.240

Kepictronics

USA . 50,000 parts In-Stock

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50,000

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Infinite Electronics LLP (Excess)

. 30,604 parts In-Stock

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30,604

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Formix International (Excess)

India . 25,966 parts In-Stock

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25,966

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Perfect Parts

USA . 22,857 parts In-Stock

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22,857

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Assy Fe

Spain . 18,600 parts In-Stock

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18,600

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Futuretech Components

Singapore . 17,500 parts In-Stock

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17,500

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QUARKTWIN TECHNOLOGY LTD

USA . 15,745 parts In-Stock

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15,745

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Kulean Microsystems

USA . 7,546 parts In-Stock

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7,546

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ChipstoGo Electronic ltd

UK . 7,500 parts In-Stock

1+ parts

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100+ parts

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7,500

-

-

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GreenTree Electronics

Israel . 7,500 parts In-Stock

1+ parts

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7,500

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SupplyDigital Components

Austria . 5,093 parts In-Stock

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5,093

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Eastek

USA . 2,500 parts In-Stock

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2,500

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iodParts Technologies Inc.

India . 2,324 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.312

10k+ parts

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2,324

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-

$0.312

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A-Z Elektronik GmbH

Germany . 2,144 parts In-Stock

1+ parts

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2,144

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Problanco Electronics

Mexico . 1,322 parts In-Stock

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1,322

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Lixinc

USA . 723 parts In-Stock

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723

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UHIMA Technologies

Türkiye . 682 parts In-Stock

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682

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TANS Electronics

Latvia . 155 parts In-Stock

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155

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Overview

Unleash the power of innovation with the MJD210T4G by Onsemi, a high-quality Power Bipolar Junction Transistor that amplifies performance in any application. Onsemi's commitment to excellence ensures reliability and efficiency, making this PNP transistor a game-changer for your projects. From amplifiers to power supplies, this versatile component offers maximum power dissipation, superior thermal performance, and a wide operating temperature range. Elevate your designs with the MJD210T4G and experience the difference in quality and value that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

Suitable for amplification and signal switching applications.

Configuration: SINGLE

Simplified design and easier circuit integration.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Space-saving and convenient for compact designs.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs.

Maximum Power Dissipation (Abs): 13 W

Can handle high power levels without overheating, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 10

Ensures stable and consistent amplification.

Maximum Operating Temperature: 150 °C

Suitable for operation in various environments.

Maximum Collector-Emitter Voltage: 25 V

Can handle moderate voltage levels in the circuit.

Transistor Element Material: SILICON

Highly reliable and widely used material for transistors.

Maximum Collector Current (IC): 5 A

Able to handle high current levels, making it suitable for power applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: SINGLE

Simplified connection and installation.

Case Connection: COLLECTOR

Easy integration into the circuit for efficient operation.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for efficient soldering.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes.

Nominal Transition Frequency (fT): 65 MHz

Capable of high-frequency operation for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD210T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD210T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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