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MJD253T4G

Onsemi

MJD253T4G by Onsemi

MJD253T4G by Onsemi is a PNP power BJT with 100V VCEO, 4A IC, and 1.4W max power dissipation. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a min hFE of 15 and fT of 40MHz, it offers high performance in a compact Gull Wing package.

Median Price

$0.397

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 34 parts In-Stock

1+ parts

$0.278

100+ parts

$0.180

1k+ parts

-

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34

$0.278

$0.180

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Newark

USA . 3,067 parts In-Stock

1+ parts

$0.617

100+ parts

$0.383

1k+ parts

$0.303

10k+ parts

-

3,067

$0.617

$0.383

$0.303

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Mouser Electronics

USA . 4,650 parts In-Stock

1+ parts

$0.660

100+ parts

$0.334

1k+ parts

$0.236

10k+ parts

$0.182

4,650

$0.660

$0.334

$0.236

$0.182

DigiKey

USA . 13,013 parts In-Stock

1+ parts

$0.850

100+ parts

$0.341

1k+ parts

$0.235

10k+ parts

$0.181

13,013

$0.850

$0.341

$0.235

$0.181

Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$2.327

100+ parts

$2.118

1k+ parts

$1.908

10k+ parts

-

3,000

$2.327

$2.118

$1.908

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Flip Electronics (Authorized)

USA . 4,646 parts In-Stock

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-

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4,646

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EBV Elektronik

Germany . 2,500 parts In-Stock

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2,500

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Rochester

USA . 1,555 parts In-Stock

1+ parts

-

100+ parts

$0.216

1k+ parts

$0.179

10k+ parts

$0.160

1,555

-

$0.216

$0.179

$0.160

Chip1Stop

Japan . 1,348 parts In-Stock

1+ parts

-

100+ parts

$0.327

1k+ parts

$0.233

10k+ parts

$0.156

1,348

-

$0.327

$0.233

$0.156

Verical

USA . 1,348 parts In-Stock

1+ parts

-

100+ parts

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$0.282

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1,348

-

-

$0.282

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Farnell

UK . 960 parts In-Stock

1+ parts

-

100+ parts

$0.278

1k+ parts

$0.203

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-

960

-

$0.278

$0.203

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Element14

Singapore . 960 parts In-Stock

1+ parts

-

100+ parts

$0.467

1k+ parts

$0.343

10k+ parts

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960

-

$0.467

$0.343

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,364 parts In-Stock

1+ parts

$0.168

100+ parts

-

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2,364

$0.168

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Freelance Electronics

USA . 700 parts In-Stock

1+ parts

$0.200

100+ parts

$0.210

1k+ parts

$0.198

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700

$0.200

$0.210

$0.198

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.233

100+ parts

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900

$0.233

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Maritex

Poland . 7,420 parts In-Stock

1+ parts

$0.321

100+ parts

$0.172

1k+ parts

$0.162

10k+ parts

$0.146

7,420

$0.321

$0.172

$0.162

$0.146

Flip Electronics

USA . 24,029 parts In-Stock

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24,029

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Vyrian

USA . 5,187 parts In-Stock

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5,187

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

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$0.305

5,000

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$0.305

Microfarads

USA . 3,577 parts In-Stock

1+ parts

-

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3,577

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-

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IBS Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.241

2,500

-

-

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$0.241

Cyclops Electronics Ltd

UK . 2,187 parts In-Stock

1+ parts

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2,187

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ComSIT Distribution GmbH

Germany . 1,895 parts In-Stock

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1,895

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Bristol Electronics

USA . 1,700 parts In-Stock

1+ parts

-

100+ parts

$0.292

1k+ parts

$0.144

10k+ parts

$0.126

1,700

-

$0.292

$0.144

$0.126

LIBRA Elektronik GmbH

Germany . 534 parts In-Stock

1+ parts

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534

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,042 parts In-Stock

1+ parts

$0.133

100+ parts

-

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5,042

$0.133

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Corohmni

South Africa . 112 parts In-Stock

1+ parts

$0.145

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112

$0.145

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Corphita

USA . 2,370 parts In-Stock

1+ parts

$0.159

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2,370

$0.159

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Argo Parts USA

USA . 4,005 parts In-Stock

1+ parts

$0.233

100+ parts

-

1k+ parts

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10k+ parts

$0.226

4,005

$0.233

-

-

$0.226

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.327

100+ parts

$2.118

1k+ parts

$1.908

10k+ parts

-

3,000

$2.327

$2.118

$1.908

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Perfect Parts

USA . 101,389 parts In-Stock

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101,389

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Lixinc

USA . 19,131 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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GreenTree Electronics

Israel . 7,500 parts In-Stock

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Kepictronics

USA . 6,760 parts In-Stock

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6,760

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SupplyDigital Components

Austria . 6,389 parts In-Stock

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6,389

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TANS Electronics

Latvia . 6,069 parts In-Stock

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6,069

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Continental Prestige Electronics

USA . 5,470 parts In-Stock

1+ parts

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$0.282

1k+ parts

$0.168

10k+ parts

$0.161

5,470

-

$0.282

$0.168

$0.161

Kulean Microsystems

USA . 5,091 parts In-Stock

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5,091

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A-Z Elektronik GmbH

Germany . 2,868 parts In-Stock

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2,868

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Eastek

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 1,822 parts In-Stock

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1,822

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UHIMA Technologies

Türkiye . 114 parts In-Stock

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114

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Overview

Upgrade your amplifier with the MJD253T4G by Onsemi, a top-of-the-line Power BJT transistor designed for maximum performance and reliability. Onsemi's reputation for quality craftsmanship ensures that this PNP transistor delivers exceptional results in a compact, easy-to-install package. Ideal for a wide range of applications, from audio amplifiers to power supplies, the MJD253T4G offers customers unbeatable value with its high power dissipation, low DC current gain, and impressive collector current capabilities. Trust Onsemi to provide you with the best in transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making the product suitable for a wide range of applications.

Polarity or Channel Type: PNP

Allows for easy design integration into PNP transistor circuits, enhancing compatibility with existing setups.

Configuration: SINGLE

Simplified design with a single transistor, reducing complexity and potential points of failure.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring high performance and reliability in amplification tasks.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and cost in production processes.

Maximum Power Dissipation (Abs): 1.4 W

Capable of handling moderate power levels, making it suitable for a variety of amplifier and other power applications.

Package Shape: RECTANGULAR

Space-efficient design that allows for compact PCB layouts and easy integration into electronic devices.

No. of Terminals: 2

Simplified connection setup with only two terminals, reducing the likelihood of wiring errors.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, suitable for power applications that require high current output.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for efficient amplification of high-frequency signals, making it ideal for audio and RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD253T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD253T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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