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YES Power Bipolar Junction Transistors (BJT) 181

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STD724T4 by STMicroelectronics

STD724T4

STMicroelectronics

STD724T4 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

30

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON

100 MHz

NJVMJD44H11RLG by Onsemi

NJVMJD44H11RLG

Onsemi

NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

STF724 by STMicroelectronics

STF724

STMicroelectronics

STF724 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 1.4 W and a collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

STN724 by STMicroelectronics

STN724

STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MJD44H11T5G by Onsemi

MJD44H11T5G

Onsemi

MJD44H11T5G by Onsemi is a NPN Power BJT with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its small outline package makes it suitable for surface mount designs.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

NJD2873RL by Onsemi

NJD2873RL

Onsemi

NJD2873RL by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 65MHz, and operates up to 175 °C. This Gull Wing package with tin lead finish is surface mountable and features a small outline design.

COLLECTOR

2 A

50 V

SINGLE

40

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

AMPLIFIER

SILICON

65 MHz

2N5154S1 by STMicroelectronics

2N5154S1

STMicroelectronics

2N5154S1 from STMicroelectronics is an NPN power BJT ideal for switching applications. It features a max VCEsat of 1.5V, 35W power dissipation, and operates b/w -65 °C to 200 °C. Its compact no-lead design enhances efficiency in various electronic circuits.

HIGH RELIABILITY

COLLECTOR

5 A

250 pF

80 V

SINGLE

40

R-XBCC-N3

1

3

200 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

NPN

3.3 W

35 W

Not Qualified

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

1300 ns

500 ns

1.5 V

STF826 by STMicroelectronics

STF826

STMicroelectronics

STF826 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STS05DTP03 by STMicroelectronics

STS05DTP03

STMicroelectronics

STS05DTP03 from STMicroelectronics is a versatile NPN/PNP BJT designed for switching applications. It features a max power dissipation of 2W, supports up to 5A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

5 A

30 V

SEPARATE, 2 ELEMENTS

80

R-PDSO-G8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STF817A by STMicroelectronics

STF817A

STMicroelectronics

STF817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.4W and collector current of 1.5A. It operates up to 150 °C with an 80V collector-emitter voltage. Ideal for compact electronic designs due to its small outline package.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

50 MHz

STN817A by STMicroelectronics

STN817A

STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

STS01DTP06 by STMicroelectronics

STS01DTP06

STMicroelectronics

STS01DTP06 by STMicroelectronics is a Power BJT with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max power dissipation of 2W and max collector current of 3A. The transistor operates up to 150°C, features dual terminals with Gull Wing form, and can withstand peak reflow at 260°C for up to 40s.

3 A

30 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G8

e4

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

40

SWITCHING

SILICON

2STD1360T4 by STMicroelectronics

2STD1360T4

STMicroelectronics

2STD1360T4 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector-emitter voltage of 60V, and operates up to 150 °C. Ideal for compact designs with its surface mount configuration.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

FZT692BQTA by Diodes Incorporated

FZT692BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 pF

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

NJVBUB323ZT4G by Onsemi

NJVBUB323ZT4G

Onsemi

NJVBUB323ZT4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 350V, max operating temp of 175°C, and can handle up to 10A collector current. This power transistor comes in a small outline package suitable for surface mount assembly.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e3

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

ZXTP19100CZQTA by Diodes Incorporated

ZXTP19100CZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 142 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSSO-F3;

HIGH RELIABILITY

COLLECTOR

2 A

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SILICON

142 MHz

BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5516H6327XTSA1 by Infineon Technologies

BCP5516H6327XTSA1

Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

TR, 7 INCH; 1000

COLLECTOR

1 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP6925H6327XTSA1 by Infineon Technologies

BCP6925H6327XTSA1

Infineon Technologies

Infineon's BCP6925H6327XTSA1 is a PNP Power BJT with 160 min hFE, 20V VCE max, and 1A IC max. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP51-16-TP by Micro Commercial Components

BCP51-16-TP

Micro Commercial Components

BCP51-16-TP by Micro Commercial Components is a PNP BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for power applications in small outline packages, it operates b/w -55 to 150°C with a max VCE of 45V.

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCP55-16-TP by Micro Commercial Components

BCP55-16-TP

Micro Commercial Components

BCP55-16-TP by Micro Commercial Components is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages, operating b/w -55°C to 150°C. Suitable for surface mount designs needing a compact and efficient transistor solution.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCX5316H6327XTSA1 by Infineon Technologies

BCX5316H6327XTSA1

Infineon Technologies

Infineon's BCX5316H6327XTSA1 is a PNP BJT with 2W power dissipation, hFE of 100, and IC of 1A. Ideal for surface mount applications, it operates up to 150°C making it suitable for power management in various electronic devices.

1 A

SINGLE

100

e3

1

1

150 Cel

245

PNP

2 W

Other Transistors

YES

TIN

FZT657QTA by Diodes Incorporated

FZT657QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): .5 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

COLLECTOR

.5 A

300 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

30 MHz

FZT795AQTA by Diodes Incorporated

FZT795AQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

HIGH RELIABILITY

COLLECTOR

.5 A

140 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FZT949QTA by Diodes Incorporated

FZT949QTA

Diodes Incorporated

FZT949QTA by Diodes Inc. is a PNP BJT with max. VCE of 30V and IC of 5.5A, ideal for automotive applications due to AEC-Q101 standard compliance. Featuring hFE of 75 and fT of 100MHz, it's designed for surface mount in small outline packages with Gull Wing terminals.

HIGH RELIABILITY

COLLECTOR

5.5 A

30 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

100 MHz

FZT690BQTA by Diodes Incorporated

FZT690BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

FZT600BQTA by Diodes Incorporated

FZT600BQTA

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

HIGH RELIABILITY

COLLECTOR

2 A

15 pF

140 V

DARLINGTON

5000

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

1.2 V

NJVMJD122T4G-VF01 by Onsemi

NJVMJD122T4G-VF01

Onsemi

NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.

COLLECTOR

8 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

NJVMJD148T4G-VF01 by Onsemi

NJVMJD148T4G-VF01

Onsemi

NJVMJD148T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 30, VCEO of 45V, and IC of 4A. Ideal for amplifier applications, it operates b/w -55 to 150 °C. This small outline package has Gull Wing terminals and is AEC-Q101 compliant.

COLLECTOR

4 A

45 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NJVMJD253T4G-VF01 by Onsemi

NJVMJD253T4G-VF01

Onsemi

NJVMJD253T4G-VF01 by Onsemi is a PNP BJT transistor with hFE of 15, VCEO of 100V, and IC of 4A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 40MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

4 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

40 MHz

NJVMJD32CT4G-VF01 by Onsemi

NJVMJD32CT4G-VF01

Onsemi

NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NJVMJD44H11RLG-VF01 by Onsemi

NJVMJD44H11RLG-VF01

Onsemi

NJVMJD44H11RLG-VF01 by Onsemi is a NPN BJT transistor with 80V VCE, 8A IC, and 85MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

NJVMJD45H11RLG-VF01 by Onsemi

NJVMJD45H11RLG-VF01

Onsemi

NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

NSV1C300ET4G-VF01 by Onsemi

NSV1C300ET4G-VF01

Onsemi

NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

COLLECTOR

3 A

100 V

SINGLE

50

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

NSV1C301ET4G-VF01 by Onsemi

NSV1C301ET4G-VF01

Onsemi

NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

3 A

100 V

SINGLE

80

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

120 MHz

BSR41F by Nexperia

BSR41F

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Case Connection: COLLECTOR;

COLLECTOR

1 A

60 V

SINGLE

50

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

PBSS5350Z/ZLF by Nexperia

PBSS5350Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;

COLLECTOR

3 A

50 V

SINGLE

200

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

PBSS5540Z/ZLF by Nexperia

PBSS5540Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: IEC-60134;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

PBSS5540Z/ZLX by Nexperia

PBSS5540Z/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

PZT2907A/ZLF by Nexperia

PZT2907A/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 4;

COLLECTOR

.6 A

60 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-134

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

PZT2907A/ZLX by Nexperia

PZT2907A/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Reference Standard: IEC-134;

COLLECTOR

.6 A

60 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-134

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

PZTA44/ZLX by Nexperia

PZTA44/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;

COLLECTOR

.3 A

400 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

IEC-134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

20 MHz

BSR30F by Nexperia

BSR30F

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;

COLLECTOR

1 A

60 V

SINGLE

10

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

PHPT61002NYCLHX by Nexperia

PHPT61002NYCLHX

Nexperia

PHPT61002NYCLHX by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 20, and IC of 2A. With a max operating temperature of 175°C, it is ideal for high-power dissipation in small outline packages.

COLLECTOR

2 A

11 pF

100 V

SINGLE

20

MO-235

R-PSSO-G4

e3

1

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

25 W

IEC-60134

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

140 MHz

.3 V

ZXTP01500BGQTA by Diodes Incorporated

ZXTP01500BGQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY

COLLECTOR

.15 A

500 V

SINGLE

80

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

60 MHz

BCP68-25H6327 by Infineon Technologies

BCP68-25H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 60;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

2DA1971Q-7 by Diodes Incorporated

2DA1971Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

HIGH RELIABILITY

COLLECTOR

.5 A

400 V

SINGLE

140

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

75 MHz

ZXTN19020DZQTA by Diodes Incorporated

ZXTN19020DZQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): 7.5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

7.5 A

20 V

SINGLE

50

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz