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40 W Power Bipolar Junction Transistors (BJT) 33

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BULT118 by STMicroelectronics

BULT118

STMicroelectronics

STMicroelectronics BULT118 is a NPN Power BJT with 400V VCE, 2A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 45W at 150 °C ambient temp. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals in FLANGE MOUNT style.

2 A

400 V

SINGLE

8

TO-126

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

40 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4900 ns

1.5 V

MD2009DFP by STMicroelectronics

MD2009DFP

STMicroelectronics

MD2009DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STL128DN by STMicroelectronics

STL128DN

STMicroelectronics

STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

COLLECTOR

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

40 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

MD1803DFP by STMicroelectronics

MD1803DFP

STMicroelectronics

MD1803DFP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STK13003 by STMicroelectronics

STK13003

STMicroelectronics

STK13003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

1.5 A

400 V

SINGLE

5

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD682T by Onsemi

BD682T

Onsemi

BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

4 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

40 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

10 MHz

ST1802FH by STMicroelectronics

ST1802FH

STMicroelectronics

ST1802FH by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

KSC2335YTU by Fairchild Semiconductor

KSC2335YTU

Fairchild Semiconductor

KSC2335YTU by Fairchild Semiconductor is a NPN BJT transistor with 400V VCEO, 7A IC, and 40W Ptot. Ideal for switching applications due to its single configuration and hFE of 40. Package style is flange mount with through-hole terminals.

7 A

400 V

SINGLE

40

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST83003 by STMicroelectronics

ST83003

STMicroelectronics

ST83003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs with through-hole mounting.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST93003 by STMicroelectronics

ST93003

STMicroelectronics

ST93003 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient power management in electronic circuits.

1.5 A

400 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD676G by Onsemi

BD676G

Onsemi

BD676G by Onsemi is a PNP power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max collector current of 4A and operating temperature of 150 °C, this transistor is designed for high-performance in various electronic circuits.

4 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD679AG by Onsemi

BD679AG

Onsemi

BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MJE800G by Onsemi

MJE800G

Onsemi

MJE800G by Onsemi is a NPN power BJT with 40W Pd, 750 hFE, and 60V Vce. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it has a max collector current of 4A and transition frequency of 1MHz.

BUILT IN BIAS RESISTOR

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

BUX85G by Onsemi

BUX85G

Onsemi

BUX85G by Onsemi is a NPN power BJT with max. collector-emitter voltage of 450V, max. collector current of 2A, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and high transition frequency of 4MHz in a rectangular package style suitable for flange mounting.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

2 A

450 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

MJE13003G by Onsemi

MJE13003G

Onsemi

MJE13003G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 1.5A, and min. DC current gain of 5. It is used for switching applications due to its high power dissipation capability of 40W in a flange mount package style.

1.5 A

400 V

SINGLE

5

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N5194G by Onsemi

2N5194G

Onsemi

The Onsemi 2N5194G is a PNP power BJT with max. collector-emitter voltage of 60V and max. collector current of 4A. It has a min. DC current gain of 10, making it suitable for switching applications with a max. power dissipation of 40W in a rectangular package style for through-hole mounting.

4 A

60 V

SINGLE

10

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

40 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 MHz

2N6107G by Onsemi

2N6107G

Onsemi

2N6107G by Onsemi is a PNP BJT transistor with 40W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications, it has a min hFE of 30 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

70 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6109G by Onsemi

2N6109G

Onsemi

2N6109G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 7A. It is commonly used for switching applications and has a min DC current gain of 30 (hFE).

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

50 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

2N6111G by Onsemi

2N6111G

Onsemi

2N6111G by Onsemi is a PNP BJT transistor with max. power dissipation of 40W, max. collector-emitter voltage of 30V, and max. collector current of 7A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

LEADFORM OPTIONS ARE AVAILABLE

COLLECTOR

7 A

30 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

BD675G by Onsemi

BD675G

Onsemi

BD675G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 40W and a min DC current gain of 750. This transistor is commonly used in amplifier applications.

4 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD675AG by Onsemi

BD675AG

Onsemi

BD675AG by Onsemi is a NPN power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max operating temp of 150°C and VCE of 45V, this transistor has IC up to 4A.

4 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD676AG by Onsemi

BD676AG

Onsemi

BD676AG by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 45V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

4 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD677AG by Onsemi

BD677AG

Onsemi

BD677AG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 4A. With a min DC current gain of 750, it is ideal for amplifier applications. This power transistor comes in a rectangular package style with through-hole terminals.

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD678G by Onsemi

BD678G

Onsemi

BD678G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 60V, max collector current of 4A, and min DC current gain of 750 (hFE). With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 40W at a max operating temperature of 150°C.

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD678AG by Onsemi

BD678AG

Onsemi

BD678AG by Onsemi is a PNP power BJT with a max collector current of 4A and min DC current gain of 750. It features a built-in diode and resistor, making it ideal for amplifier applications. With a max operating temperature of 150°C, this transistor is suitable for high-power amplification needs.

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD680AG by Onsemi

BD680AG

Onsemi

The Onsemi BD680AG is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 750. With a max power dissipation of 40W and operating temperature up to 150°C, it is suitable for various high-power electronic designs.

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BD682TG by Onsemi

BD682TG

Onsemi

BD682TG by Onsemi is a PNP power BJT with 40W max power dissipation, hFE of 750, and VCE of 100V. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

4 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

40 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

40

AMPLIFIER

SILICON

MJE521G by Onsemi

MJE521G

Onsemi

MJE521G by Onsemi is a NPN BJT transistor with 40V VCEO, 4A IC, and 40W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. Operating up to 135 °C, it offers a min hFE of 40 and features silicon element material.

4 A

40 V

SINGLE

40

TO-225AA

R-PSFM-T3

e3

1

3

135 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

40 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJE700G by Onsemi

MJE700G

Onsemi

MJE700G by Onsemi is a PNP power BJT with 40W max power dissipation, 750 min hFE, and 60V max VCE. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it offers high performance in various electronic designs.

BUILT IN BIAS RESISTOR

4 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE702G by Onsemi

MJE702G

Onsemi

MJE702G by Onsemi is a PNP BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE802G by Onsemi

MJE802G

Onsemi

MJE802G by Onsemi is a NPN BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor. With hFE of 750 and fT of 1MHz, this transistor operates at up to 150 °C in a rectangular package with matte tin finish.

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJE803G by Onsemi

MJE803G

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

BUILT IN BIAS RESISTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

40 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

1 MHz

MJF6668G by Onsemi

MJF6668G

Onsemi

The Onsemi MJF6668G is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 40W power dissipation for switching applications at up to 150 °C. With a max collector-emitter voltage of 100V and collector current of 10A, it offers reliable performance in various electronic circuits.

ISOLATED

10 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

40 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz