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3 A Power Bipolar Junction Transistors (BJT) 67

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TRD136DT4 by STMicroelectronics

TRD136DT4

STMicroelectronics

STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.

3 A

400 V

SINGLE WITH BUILT-IN DIODE

10

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

20 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

FZT751QTC by Diodes Incorporated

FZT751QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

NJVMJD32CG by Onsemi

NJVMJD32CG

Onsemi

NJVMJD32CG by Onsemi is a PNP BJT with 15W power dissipation, 3A collector current, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and 3MHz transition frequency.

3 A

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

3 MHz

NSV40301MZ4T1G by Onsemi

NSV40301MZ4T1G

Onsemi

NSV40301MZ4T1G by Onsemi is a NPN Power BJT with 40V VCE, 3A IC, and small outline package. Ideal for power management applications requiring high collector current and voltage capabilities.

3 A

40 V

e3

1

SMALL OUTLINE

260

NPN

MATTE TIN

30

2STD2360T4 by STMicroelectronics

2STD2360T4

STMicroelectronics

2STD2360T4 by STMicroelectronics is a PNP BJT transistor for switching applications. With 3A max collector current, 60V max collector-emitter voltage, and 15W max power dissipation, it operates at up to 150 °C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

2STN2340 by STMicroelectronics

2STN2340

STMicroelectronics

2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.

COLLECTOR

3 A

40 V

SINGLE

180

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FZT749QTA by Diodes Incorporated

FZT749QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

FZT749QTC by Diodes Incorporated

FZT749QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

BDP947E6327HTSA1 by Infineon Technologies

BDP947E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

45 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP949E6327HTSA1 by Infineon Technologies

BDP949E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

60 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP953E6327HTSA1 by Infineon Technologies

BDP953E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

100 V

SINGLE

15

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

NTE2325 by Nte Electronics

NTE2325

Nte Electronics

NTE2325 by Nte Electronics is a NPN BJT transistor with 800V max collector-emitter voltage, 3A max collector current, and 50W max power dissipation. Ideal for switching applications due to its single configuration and high transition frequency of 15MHz. Package style is flange mount with through-hole terminals.

COLLECTOR

3 A

800 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

BUL213 by STMicroelectronics

BUL213

STMicroelectronics

BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.

HIGH RELIABILITY

3 A

600 V

SINGLE

16

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

60 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

6420 ns

.9 V

NJX1675PDR2G by Onsemi

NJX1675PDR2G

Onsemi

NJX1675PDR2G by Onsemi is a Power BJT with NPN/PNP polarity, 2 separate elements. Ideal for switching applications, it has hFE of 180, VCE of 30V, and IC of 3A. With a max temp of 150 °C and fT of 100MHz, this transistor in Gull Wing package suits SMT designs.

3 A

30 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BUL1403ED by STMicroelectronics

BUL1403ED

STMicroelectronics

BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.

3 A

650 V

SINGLE WITH BUILT-IN DIODE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2SD2396K by ROHM

2SD2396K

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

ISOLATED

3 A

60 V

SINGLE

1000

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

30 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

40 MHz

BUL3N7 by STMicroelectronics

BUL3N7

STMicroelectronics

BUL3N7 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170HP by STMicroelectronics

STC03DE170HP

STMicroelectronics

STC03DE170HP by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 35.7W power dissipation, and hFE of 10. Ideal for switching applications, it comes in a plastic/epoxy package with through-hole terminals. Operating temp up to 125°C makes it suitable for various industrial uses.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

10

TO-247

R-PSFM-T4

e3

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

35.7 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170HV by STMicroelectronics

STC03DE170HV

STMicroelectronics

STC03DE170HV by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 100W power dissipation, and hFE of 10. Ideal for switching applications, it has a single configuration with built-in FET and diode in a rectangular package suitable for flange mount.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

10

TO-247

R-PSFM-T4

e3

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STN2360 by STMicroelectronics

2STN2360

STMicroelectronics

2STN2360 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.6 W, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

COLLECTOR

3 A

60 V

SINGLE

80

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

2STL1360 by STMicroelectronics

2STL1360

STMicroelectronics

2STL1360 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.2 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic circuits.

3 A

60 V

SINGLE

160

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

1.2 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

STD826T4 by STMicroelectronics

STD826T4

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

3 A

30 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

2STF2340 by STMicroelectronics

2STF2340

STMicroelectronics

2STF2340 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 1.4 W, a collector current of 3 A, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

40 V

SINGLE

200

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STN690A by STMicroelectronics

STN690A

STMicroelectronics

STN690A by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

90

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

2STF1340 by STMicroelectronics

2STF1340

STMicroelectronics

2STF1340 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 3A, and operates at temperatures up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

40 V

SINGLE

180

R-PSSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

1.4 W

Not Qualified

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

TR136 by STMicroelectronics

TR136

STMicroelectronics

TR136 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 60W and a collector-emitter voltage of 400V. It operates at up to 150 °C with a min DC current gain (hFE) of 10. Its through-hole design ensures easy integration in various electronic circuits.

3 A

400 V

SINGLE

10

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

60 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB7216-1 by STMicroelectronics

BULB7216-1

STMicroelectronics

BULB7216-1 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance power management solutions.

3 A

700 V

SINGLE

4

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB7216T4 by STMicroelectronics

BULB7216T4

STMicroelectronics

BULB7216T4 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for compact electronic designs with surface mount capabilities.

3 A

700 V

SINGLE

4

TO-263AB

R-PSSO-G2

e3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

80 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

MJD31CRL by Onsemi

MJD31CRL

Onsemi

MJD31CRL by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V collector-emitter voltage, and 3A collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 140 °C. Suitable for surface mount assembly with Gull Wing terminals.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

MJD32CRL by Onsemi

MJD32CRL

Onsemi

MJD32CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 140 °C. This Gull Wing package with tin-lead finish is surface mountable and offers a transition frequency of 3MHz.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e0

1

1

2

140 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

AMPLIFIER

SILICON

3 MHz

STN749 by STMicroelectronics

STN749

STMicroelectronics

STN749 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 25 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

STN1802 by STMicroelectronics

STN1802

STMicroelectronics

STN1802 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for compact electronic designs with surface mount capabilities.

COLLECTOR

3 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

STD790AT4 by STMicroelectronics

STD790AT4

STMicroelectronics

STD790AT4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector currents of 3A. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

90

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

STC03DE150 by STMicroelectronics

STC03DE150

STMicroelectronics

STC03DE150 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. This versatile transistor comes in a flange mount package with through-hole terminals.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170 by STMicroelectronics

STC03DE170

STMicroelectronics

STC03DE170 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. Its compact flange mount design ensures efficient performance in various electronic circuits.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STX13005G-AP by STMicroelectronics

STX13005G-AP

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.8 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 8;

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13005G by STMicroelectronics

STX13005G

STMicroelectronics

STX13005G by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 3A. It has a min. DC current gain of 8, suitable for switching applications with a max. power dissipation of 2.8W in cylindrical package style for through-hole mounting at up to 150°C operating temperature.

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TIP31C-BP by Micro Commercial Components

TIP31C-BP

Micro Commercial Components

TIP31C-BP by Micro Commercial Components is a NPN BJT transistor with hFE of 25, IC of 3A, and VCE of 100V. Ideal for power applications due to its high operating temp of 150°C and fT of 3MHz. Its through-hole package makes it suitable for various electronic designs.

3 A

100 V

SINGLE

25

TO-220AB

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

10

SILICON

3 MHz

MJD31C1G by Onsemi

MJD31C1G

Onsemi

The Onsemi MJD31C1G is a NPN BJT transistor with 3 terminals, capable of handling up to 15W power dissipation. With a max collector-emitter voltage of 100V and max collector current of 3A, it's ideal for amplifier applications. Featuring a min DC current gain of 10 and operating temperature up to 150°C, this transistor offers reliable performance in various electronic circuits.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

15 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

3 MHz

2N4918G by Onsemi

2N4918G

Onsemi

The Onsemi 2N4918G is a PNP power BJT with max. collector-emitter voltage of 40V, max. collector current of 3A, and max. power dissipation of 30W. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

3 A

40 V

SINGLE

10

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BUL642D2G by Onsemi

BUL642D2G

Onsemi

BUL642D2G by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a compact package. Suitable for use in various electronic devices due to its high collector current and temperature capabilities.

BUILT-IN EFFICIENT ANTISATURATION NETWORK

COLLECTOR

3 A

440 V

SINGLE WITH BUILT-IN DIODE

18

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

75 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

13 MHz

2N4921G by Onsemi

2N4921G

Onsemi

2N4921G by Onsemi is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 40V, and max. collector current of 3A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package shape.

3 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BD179G by Onsemi

BD179G

Onsemi

The Onsemi BD179G is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector-emitter voltage of 80V and max current of 3A, it's ideal for amplifier applications. Operating at temperatures up to 150 °C, this silicon-based transistor has a transition frequency of 3MHz.

3 A

80 V

SINGLE

15

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

MJE172G by Onsemi

MJE172G

Onsemi

MJE172G by Onsemi is a PNP BJT transistor with 80V VCEO, 3A IC, and 1.5W power dissipation. Ideal for switching applications with a min hFE of 12 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.

3 A

80 V

SINGLE

12

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

MJE180G by Onsemi

MJE180G

Onsemi

MJE180G by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1.5W power dissipation and 3A collector current. With a min hFE of 12, it's ideal for switching applications at temperatures up to 150°C. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic circuits.

3 A

40 V

SINGLE

12

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

50 MHz

STD724T4 by STMicroelectronics

STD724T4

STMicroelectronics

STD724T4 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

30

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON

100 MHz

STF724 by STMicroelectronics

STF724

STMicroelectronics

STF724 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 1.4 W and a collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

STN724 by STMicroelectronics

STN724

STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz