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3 A Power Bipolar Junction Transistors (BJT) 67

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BULT3P3 by STMicroelectronics

BULT3P3

STMicroelectronics

BULT3P3 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 32W, operates up to 150 °C, and supports collector-emitter voltages up to 200V. Ideal for efficient circuit designs in various electronic devices.

3 A

200 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD830CP40 by STMicroelectronics

STD830CP40

STMicroelectronics

STD830CP40 by STMicroelectronics is a versatile NPN/PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, operates at up to 150 °C, and supports a collector current of 3A. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SEPARATE, 2 ELEMENTS

4

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN AND PNP

Not Qualified

BIP General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

STF826 by STMicroelectronics

STF826

STMicroelectronics

STF826 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STS01DTP06 by STMicroelectronics

STS01DTP06

STMicroelectronics

STS01DTP06 by STMicroelectronics is a Power BJT with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max power dissipation of 2W and max collector current of 3A. The transistor operates up to 150°C, features dual terminals with Gull Wing form, and can withstand peak reflow at 260°C for up to 40s.

3 A

30 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G8

e4

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

40

SWITCHING

SILICON

BUL3P5 by STMicroelectronics

BUL3P5

STMicroelectronics

BUL3P5 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient control in electronic circuits.

3 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STD1360T4 by STMicroelectronics

2STD1360T4

STMicroelectronics

2STD1360T4 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector-emitter voltage of 60V, and operates up to 150 °C. Ideal for compact designs with its surface mount configuration.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

FZT690BQTA by Diodes Incorporated

FZT690BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

NJVMJD32CT4G-VF01 by Onsemi

NJVMJD32CT4G-VF01

Onsemi

NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NSV1C300ET4G-VF01 by Onsemi

NSV1C300ET4G-VF01

Onsemi

NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

COLLECTOR

3 A

100 V

SINGLE

50

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

NSV1C301ET4G-VF01 by Onsemi

NSV1C301ET4G-VF01

Onsemi

NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

3 A

100 V

SINGLE

80

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

120 MHz

PBSS5350Z/ZLF by Nexperia

PBSS5350Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;

COLLECTOR

3 A

50 V

SINGLE

200

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

2N4237PBFREE by Central Semiconductor

2N4237PBFREE

Central Semiconductor

2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.

3 A

100 pF

40 V

SINGLE

30

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

6 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

2 MHz

.6 V

2SAR587D3TL1 by ROHM

2SAR587D3TL1

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

65 pF

120 V

SINGLE

120

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

10 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

.2 V

ZXTP19040CGQ-7 by Diodes Incorporated

ZXTP19040CGQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

40 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

KSC1173YTSTUA by Onsemi

KSC1173YTSTUA

Onsemi

KSC1173YTSTUA by Onsemi is a NPN BJT transistor with max VCEsat of 0.8V, hFE of 120, and IC of 3A. Ideal for amplifier applications, it has a max operating temp of 150 °C and collector-emitter voltage of 30V. The package style is flange mount with through-hole terminals in a rectangular shape.

3 A

35 pF

30 V

SINGLE

120

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

10 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.8 V

ZXTP2014ZQTA by Diodes Incorporated

ZXTP2014ZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

33 pF

140 V

SINGLE

45

R-PSSO-F3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

120 MHz

.33 V

DXTN3C100PD-13 by Diodes Incorporated

DXTN3C100PD-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

COLLECTOR

3 A

11 pF

100 V

SEPARATE, 2 ELEMENTS

10

R-PDSO-F8

e3

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.33 V

DXTC3C100PD-13 by Diodes Incorporated

DXTC3C100PD-13

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 3 A; Minimum Operating Temperature: -55 Cel;

COLLECTOR

3 A

11 pF

100 V

SEPARATE, 2 ELEMENTS

10

R-PDSO-F8

e3

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.33 V

ZTP25040DFHQTA by Diodes Incorporated

ZTP25040DFHQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 3 A;

3 A

17.4 pF

40 V

SINGLE

30

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.25 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

270 MHz

.22 V