Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
70V26L25JI8
Integrated Device Technology
70V26L25JI8 by Integrated Device Technology is a 16Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 25ns access time, 185mA max supply current, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact chip carrier package.
25 ns
COMMON
S-PQCC-J84
e0
29.2862 mm
262144 bit
MULTI-PORT SRAM
16
1
2
84
16384 words
16K
ASYNCHRONOUS
85 Cel
-40 Cel
16KX16
3-STATE
PLASTIC/EPOXY
QCCJ
LDCC84,1.2SQ
SQUARE
CHIP CARRIER
PARALLEL
225
3.3
Not Qualified
4.572 mm
.003 Amp
3 V
SRAMs
185 mA
3.6 V
YES
CMOS
INDUSTRIAL
TIN LEAD
J BEND
1.27 mm
QUAD
30
70V27L20PFI8
70V27L20PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package suitable for industrial applications, offering fast access time of 20 ns and common I/O type.
20 ns
S-PQFP-G100
14 mm
524288 bit
3
100
32768 words
32K
32KX16
LFQFP
QFP100,.63SQ,20
FLATPACK, LOW PROFILE, FINE PITCH
240
1.6 mm
.006 Amp
230 mA
GULL WING
.5 mm
20
70V27L35PFI8
70V27L35PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a fast access time of 35ns and is ideal for industrial applications requiring high-speed memory solutions.
35 ns
INTERRUPT FLAGS
235 mA
70V37L20PFI8
70V37L20PFI8 by Integrated Device Technology is a 32KX18 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package and offers fast access time of 20 ns. Ideal for industrial applications requiring high-speed memory operations.
INTERRUPT FLAG
589824 bit
18
32KX18
220 mA
70V38L20PFI8
70V38L20PFI8 by Integrated Device Technology is a 64Kx18 MULTI-PORT SRAM with 3.3V supply, operating in ASYNCHRONOUS mode. Featuring a low profile FLATPACK package, 0.5mm terminal pitch, and industrial temperature grade, it's ideal for high-speed parallel memory applications.
1179648 bit
65536 words
64K
64KX18
70V631S12PRFI8
70V631S12PRFI8 by Integrated Device Technology is a 256Kx18 MULTI-PORT SRAM with 3.3V nominal voltage, operating in synchronous mode. It features a low profile flatpack package and offers fast access time of 12 ns, making it ideal for industrial applications requiring high-speed memory solutions.
12 ns
R-PQFP-G128
20 mm
4718592 bit
128
262144 words
256K
SYNCHRONOUS
256KX18
QFP128,.63X.87,20
RECTANGULAR
2.5/3.3,3.3
.015 Amp
3.15 V
515 mA
3.45 V
7130SA55PFI8
7130SA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile FLATPACK package suitable for industrial applications. With an asynchronous operating mode and common I/O type, this SRAM is ideal for high-speed parallel data processing tasks.
55 ns
S-PQFP-G64
8192 bit
8
64
1024 words
1K
1KX8
LQFP
QFP64,.66SQ,32
FLATPACK, LOW PROFILE
5
.03 Amp
4.5 V
190 mA
5.5 V
.8 mm
71321SA55JI8
71321SA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures. Ideal for applications requiring fast data retrieval in harsh environments.
INTERRUPT FLAG; AUTOMATIC POWER-DOWN
S-PQCC-J52
19.1262 mm
16384 bit
52
2048 words
2K
2KX8
LDCC52,.8SQ
7133LA25PFI8
7133LA25PFI8 by Integrated Device Technology is a 2Kx16 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable memory storage. The device supports asynchronous operation and offers 3-STATE output characteristics.
32768 bit
2KX16
.004 Amp
2 V
300 mA
71342LA25JI8
71342LA25JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures up to 85°C. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.
4096 words
4K
4KX8
4.57 mm
.0015 Amp
260 mA
71342LA25PFI8
71342LA25PFI8 by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bits. It operates at an industrial temperature grade range from -40 to 85°C, featuring a max access time of 25ns. Ideal for applications requiring fast and reliable data storage in harsh environments.
71V25761S183BGI8
71V25761S183BGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3-STATE output. It has a package style of GRID ARRAY and is suitable for industrial applications requiring fast access times and high memory density.
3.3 ns
PIPELINED ARCHITECTURE
183 MHz
R-PBGA-B119
22 mm
CACHE SRAM
36
119
131072 words
128K
128KX36
BGA
BGA119,7X17,50
GRID ARRAY
2.5,3.3
2.36 mm
.035 Amp
3.14 V
350 mA
3.465 V
3.135 V
BALL
BOTTOM
71V3557S75BGI8
71V3557S75BGI8 by Integrated Device Technology is a 128Kx36 ZBT SRAM with 7.5ns access time, operating at 3.3V. It features synchronous operation and a memory density of 4718592 bits, suitable for industrial applications requiring fast and reliable parallel memory access.
7.5 ns
ZBT SRAM
71V35761S183BGI8
71V35761S183BGI8 by Integrated Device Technology is a CACHE SRAM with 128KX36 organization, operating at 183 MHz clock frequency. It has a max access time of 3.3 ns and is suitable for industrial applications requiring fast synchronous memory solutions.
CY7C1059DV33-12ZSXI
Cypress Semiconductor
CY7C1059DV33-12ZSXI by Cypress Semiconductor is a 1MX8 SRAM with 3.3V supply, 12ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a small outline package.
R-PDSO-G44
e3
18.415 mm
8388608 bit
STANDARD SRAM
44
1048576 words
1M
1MX8
TSOP2
TSOP44,.46,32
SMALL OUTLINE, THIN PROFILE
260
1.194 mm
.02 Amp
100 mA
MATTE TIN
DUAL
40
10.16 mm
7130LA25JI8
7130LA25JI8 by Integrated Device Technology is a 1KX8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.
7132LA25JI8
7132LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a chip carrier package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.
AS7C31026C-12BIN
Alliance Memory
Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.
R-PBGA-B48
e3/e6
8 mm
1048576 bit
48
64KX16
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.34 mm
.75 mm
6 mm
CY7C1470BV25-200BZI
ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;
3 ns
200 MHz
R-PBGA-B165
17 mm
75497472 bit
165
2097152 words
2M
2MX36
LBGA
BGA165,11X15,40
GRID ARRAY, LOW PROFILE
2.5
1.4 mm
2.38 V
450 mA
2.625 V
2.375 V
1 mm
15 mm
PCF8570P/F5,112
NXP Semiconductors
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e4;
2-WIRE I2C SERIAL INTERFACE
.1 MHz
R-PDIP-T8
e4
9.5 mm
2048 bit
256 words
256
256X8
OPEN-DRAIN
NO
DIP
DIP8,.3
IN-LINE
SERIAL
3/5
4.2 mm
.0000004 Amp
1 V
.2 mA
6 V
2.5 V
NICKEL PALLADIUM GOLD
THROUGH-HOLE
2.54 mm
7.62 mm
PCF8570T/F5,512
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;
3400 ns
R-PDSO-G8
7.55 mm
SOP
SOP8,.4
SMALL OUTLINE
2.65 mm
7.5 mm
PCF8570T/F5,518
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;
IS62WV1288BLL-55HLI-TR
Integrated Silicon Solution
IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time. Operating at 3V, it's ideal for industrial applications requiring fast and reliable memory storage. With a compact size of 11.8mm x 8mm and low power consumption, it's suitable for various embedded systems.
R-PDSO-G32
11.8 mm
32
128KX8
TSOP1
1.25 mm
IS62WV1288BLL-55QLI-TR
IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and 1048576-bit memory density, it offers fast data retrieval for various electronic devices.
20.445 mm
3 mm
11.305 mm
IS62WV1288BLL-55TLI-TR
IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.
18.4 mm
1.2 mm
MT45W2MW16PGA-70ITTR
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;
70 ns
e1
33554432 bit
PSEUDO STATIC RAM
2MX16
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1.95 V
1.7 V
TIN SILVER COPPER
MT45W4MW16BCGB-701ITTR
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;
R-PBGA-B54
67108864 bit
54
4194304 words
4M
4MX16
1.8
Tin/Silver/Copper (Sn/Ag/Cu)
N01L63W2AT25I
Onsemi
N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
18.41 mm
LSSOP
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
3/3.3
.00001 Amp
1.8 V
14 mA
2.3 V
N04L63W2AB27I
N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
4194304 bit
256KX16
BGA48,6X8,30
16 mA
N04L63W2AT27IT
N04L63W2AT27IT by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.
N04L63W2AT27I
N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.
N25S818HAS21I
N25S818HAS21I by Onsemi is a 32Kx8 SRAM with 16MHz clock frequency, operating at -40 to 85°C. It features separate I/O, 1.8V supply voltage, and 3-STATE output. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.
16 MHz
SEPARATE
4.9 mm
1, (3 LINE)
32KX8
SOP8,.25
1.75 mm
.0000005 Amp
10 mA
3.91 mm
N25S818HAT21I
N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
1.1 mm
.65 mm
N01L83W2AN25I
N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.
TSSOP32,.56,20
N01L83W2AT25I
N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.
TSSOP32,.8,20
N02L63W3AB25IT
Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.
2097152 bit
128KX16
2.5/3.3
N02L63W3AB25I
N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
N02L63W3AT25IT
N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
N64S830HAS22I
N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.
20 MHz
65536 bit
8192 words
8K
8KX8
.000004 Amp
3.9 mm
N64S830HAT22I
N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.
N02L83W2AN25IT
N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.
256KX8
N02L83W2AN25I
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 256K;
N02L83W2AT25I
N02L83W2AT25I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.
N08L63W2AB27I
Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.
85 ns
10 mm
524288 words
512K
512KX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
15 mA
N25S830HAS22I
N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.
2.7 V
N25S830HAT22I
N25S830HAT22I by Onsemi is a 32KX8 SRAM with 3-STATE output, operating at 20 MHz. Ideal for industrial applications, it features a supply voltage of 2.7-3.6V and operates in synchronous mode with separate I/O type. Package style is small outline, thin profile, shrink pitch, making it suitable for compact designs.
N01L63W3AT25IT
N01L63W3AT25IT by Onsemi is a 64KX16 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.
N04L63W1AB27I
N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
© 2023 All rights reserved
