Loading...

INDUSTRIAL SRAM 319

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61C6416AL-12KI by Integrated Silicon Solution

IS61C6416AL-12KI

Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-J44

e0

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

10.16 mm

IS61C6416AL-12KLI by Integrated Silicon Solution

IS61C6416AL-12KLI

Integrated Silicon Solution

IS61C6416AL-12KLI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J44

e3

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS61C6416AL-12TI by Integrated Silicon Solution

IS61C6416AL-12TI

Integrated Silicon Solution

IS61C6416AL-12TI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-G44

e0

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

1.2 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS62WV12816BLL-55BLI by Integrated Silicon Solution

IS62WV12816BLL-55BLI

Integrated Silicon Solution

IS62WV12816BLL-55BLI by Integrated Silicon Solution is a 128KX16 SRAM with 55 ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8 mm

2097152 bit

STANDARD SRAM

16

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00001 Amp

1 V

SRAMs

30 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62WV1288BLL-55QLI by Integrated Silicon Solution

IS62WV1288BLL-55QLI

Integrated Silicon Solution

IS62WV1288BLL-55QLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

55 ns

COMMON

R-PDSO-G32

e3

20.445 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3/3.3

Not Qualified

3 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV1288BLL-55TLI by Integrated Silicon Solution

IS62WV1288BLL-55TLI

Integrated Silicon Solution

IS62WV1288BLL-55TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and Gull Wing terminals. Ideal for applications requiring fast and reliable memory storage in harsh environments.

55 ns

COMMON

R-PDSO-G32

e3

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.000005 Amp

1.2 V

SRAMs

15 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

40

8 mm

IS63LV1024L-10JLI by Integrated Silicon Solution

IS63LV1024L-10JLI

Integrated Silicon Solution

IS63LV1024L-10JLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

10 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IS61LPS25636A-200TQLI by Integrated Silicon Solution

IS61LPS25636A-200TQLI

Integrated Silicon Solution

IS61LPS25636A-200TQLI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3.3V nominal voltage, operating at up to 200MHz clock frequency. Ideal for industrial applications requiring fast access time of 3.1ns and low standby current of 0.105Amp.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

9437184 bit

CACHE SRAM

36

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

CY7C1041D-10VXI by Cypress Semiconductor

CY7C1041D-10VXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOJ; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

10 ns

COMMON

R-PDSO-J44

e4

28.575 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1041D-10ZSXI by Cypress Semiconductor

CY7C1041D-10ZSXI

Cypress Semiconductor

CY7C1041D-10ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 10ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

10 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1049D-10VXI by Cypress Semiconductor

CY7C1049D-10VXI

Cypress Semiconductor

CY7C1049D-10VXI by Cypress Semiconductor is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Widely used in industrial applications for its small outline package and parallel interface.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1399B-15VXI by Cypress Semiconductor

CY7C1399B-15VXI

Cypress Semiconductor

CY7C1399B-15VXI by Cypress Semiconductor is a 32KX8 CACHE SRAM with 3.3V supply, 15ns access time, and 3-STATE output. It operates in industrial temperature range and has a small outline package suitable for various parallel applications.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

CACHE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.00002 Amp

2 V

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

7.5 mm

CY7C1440AV33-250AXI by Cypress Semiconductor

CY7C1440AV33-250AXI

Cypress Semiconductor

CY7C1440AV33-250AXI by Cypress is a 1MX36 CACHE SRAM with 3.3V supply, 250MHz clock frequency, and 2.6ns access time. Ideal for industrial applications requiring high-speed synchronous memory with low power consumption.

2.6 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

475 mA

3.6 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61LV6416-10BLI by Integrated Silicon Solution

IS61LV6416-10BLI

Integrated Silicon Solution

IS61LV6416-10BLI by Integrated Silicon Solution is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact GRID ARRAY package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS62LV256AL-45ULI by Integrated Silicon Solution

IS62LV256AL-45ULI

Integrated Silicon Solution

IS62LV256AL-45ULI by Integrated Silicon Solution is a 32KX8 SRAM with 3.3V supply, 45ns access time, and 32768 words. Ideal for industrial applications requiring fast and reliable memory storage in a small outline package.

45 ns

COMMON

R-PDSO-G28

e3

18.11 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

2.84 mm

.00002 Amp

2 V

SRAMs

12 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

8.405 mm

IDT71256SA12YGI8 by Integrated Device Technology

IDT71256SA12YGI8

Integrated Device Technology

IDT71256SA12YGI8 by Integrated Device Technology is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

MT45W1MW16BDGB-701IT by Micron Technology

MT45W1MW16BDGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 1MX16;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W1MW16PDGA-70IT by Micron Technology

MT45W1MW16PDGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS61LV6416-10TLI by Integrated Silicon Solution

IS61LV6416-10TLI

Integrated Silicon Solution

IS61LV6416-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 10ns access time, 44 terminals in a small outline package, and is ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.01 Amp

3.14 V

SRAMs

130 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS63LV1024L-10TLI by Integrated Silicon Solution

IS63LV1024L-10TLI

Integrated Silicon Solution

IS63LV1024L-10TLI by Integrated Silicon Solution is a 128Kx8 SRAM with 10ns access time, operating at 3.3V. It features a small outline package suitable for industrial applications, offering 131072 words of memory with 1048576 bits density in an asynchronous mode.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

10

10.16 mm

71421LA25PFI8 by Integrated Device Technology

71421LA25PFI8

Integrated Device Technology

71421LA25PFI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 64 terminals in a flatpack package, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71421LA55JI8 by Integrated Device Technology

71421LA55JI8

Integrated Device Technology

71421LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.004 Amp

2 V

SRAMs

140 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7142LA25JI8 by Integrated Device Technology

7142LA25JI8

Integrated Device Technology

7142LA25JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a square chip carrier package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact form factor.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.004 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C1019CV33-10ZXI by Cypress Semiconductor

CY7C1019CV33-10ZXI

Cypress Semiconductor

CY7C1019CV33-10ZXI by Cypress Semiconductor is a 128Kx8 SRAM with 3.3V supply, 10ns access time, and 85°C operating temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.

10 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.2 mm

.005 Amp

3 V

SRAMs

80 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C131-55JXIT by Cypress Semiconductor

CY7C131-55JXIT

Cypress Semiconductor

CY7C131-55JXIT by Cypress Semiconductor is a 1Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

CYDM128B16-55BVXI by Cypress Semiconductor

CYDM128B16-55BVXI

Cypress Semiconductor

CYDM128B16-55BVXI by Cypress Semiconductor is a 8KX16 MULTI-PORT SRAM with 55 ns access time, operating at 1.8/3 V. It features a very thin profile GRID ARRAY package suitable for industrial applications. This CMOS technology memory device has 100 terminals in a square shape, making it ideal for high-speed parallel operations.

55 ns

ALSO OPERATES AT 2.5V AND 3V SUPPLY

COMMON

S-PBGA-B100

e1

6 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA100,10X10,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8/3

Not Qualified

1 mm

.000006 Amp

1.7 V

SRAMs

60 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

20

6 mm

CY7C1021BN-15VXI by Cypress Semiconductor

CY7C1021BN-15VXI

Cypress Semiconductor

CY7C1021BN-15VXI by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features 3-STATE output and is ideal for industrial applications requiring fast and reliable parallel memory storage. This small outline package offers common I/O type and dual terminal position for easy integration in various electronic devices.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1021BN-15ZXI by Cypress Semiconductor

CY7C1021BN-15ZXI

Cypress Semiconductor

CY7C1021BN-15ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a fast access time of 15ns and industrial temperature grade. Ideal for applications requiring high-speed memory operations in harsh environments.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IDT71256SA12YGI by Integrated Device Technology

IDT71256SA12YGI

Integrated Device Technology

IDT71256SA12YGI by Integrated Device Technology is a 32Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and asynchronous operation, suitable for industrial applications requiring fast and reliable memory storage. With 3-state output characteristics and common I/O type, it offers high performance in a compact form factor.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

7008L20JI by Integrated Device Technology

7008L20JI

Integrated Device Technology

7008L20JI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

20 ns

COMMON

S-PQCC-J84

e0

29.3116 mm

524288 bit

MULTI-PORT SRAM

8

1

1

2

84

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.3116 mm

7008L20PFI by Integrated Device Technology

7008L20PFI

Integrated Device Technology

7008L20PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a low profile FLATPACK package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable parallel memory storage. With 3-STATE output characteristics and common I/O type, it offers high performance in an asynchronous mode.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI by Integrated Device Technology

7008S55PFI

Integrated Device Technology

7008S55PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

IS62WV10248BLL-55BLI by Integrated Silicon Solution

IS62WV10248BLL-55BLI

Integrated Silicon Solution

IS62WV10248BLL-55BLI by Integrated Silicon Solution is a 1MX8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and CMOS technology, suitable for industrial applications requiring fast and reliable memory storage.

55 ns

COMMON

R-PBGA-B48

e1

8.7 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

.00002 Amp

1.2 V

SRAMs

35 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

7.2 mm

IS62WV1288DBLL-45HLI by Integrated Silicon Solution

IS62WV1288DBLL-45HLI

Integrated Silicon Solution

IS62WV1288DBLL-45HLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, 45ns access time, and 1048576-bit memory density. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

COMMON

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

1.2 V

SRAMs

8 mA

3.6 V

2.3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

CY14E256L-SZ35XI by Cypress Semiconductor

CY14E256L-SZ35XI

Cypress Semiconductor

CY14E256L-SZ35XI by Cypress Semiconductor is a 32Kx8 SRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 35ns and industrial temperature grade suitability. Ideal for applications requiring fast, non-volatile memory storage in compact designs.

35 ns

R-PDSO-G32

e3

20.726 mm

262144 bit

NON-VOLATILE SRAM

8

3

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.54 mm

.0015 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

20

7.505 mm

IS61WV102416BLL-10MI by Integrated Silicon Solution

IS61WV102416BLL-10MI

Integrated Silicon Solution

IS61WV102416BLL-10MI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

235

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

BALL

.75 mm

BOTTOM

30

9 mm

CY7C1021BL-15ZXIT by Cypress Semiconductor

CY7C1021BL-15ZXIT

Cypress Semiconductor

CY7C1021BL-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It has a small outline, thin profile package and is suitable for industrial applications requiring fast and reliable parallel memory storage.

15 ns

R-PDSO-G44

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.194 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

IS61LPS25618A-200TQLI by Integrated Silicon Solution

IS61LPS25618A-200TQLI

Integrated Silicon Solution

IS61LPS25618A-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with a max clock frequency of 200 MHz. It operates in synchronous mode and has a min standby voltage of 3.14 V. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

CACHE SRAM

18

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.000075 Amp

3.14 V

SRAMs

210 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

IS62C5128BL-45QLI by Integrated Silicon Solution

IS62C5128BL-45QLI

Integrated Silicon Solution

IS62C5128BL-45QLI by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

45 ns

COMMON

R-PDSO-G32

e3

20.495 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.12 mm

.000015 Amp

2 V

SRAMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

CY6264-55SNXI by Cypress Semiconductor

CY6264-55SNXI

Cypress Semiconductor

CY6264-55SNXI by Cypress Semiconductor is an 8KX8 SRAM with a 55ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

55 ns

COMMON

R-PDSO-G28

e4

17.9324 mm

65536 bit

STANDARD SRAM

8

3

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.45

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

2.794 mm

.03 Amp

4.5 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

20

7.5057 mm

IS61LPS25636A-200B3LI by Integrated Silicon Solution

IS61LPS25636A-200B3LI

Integrated Silicon Solution

IS61LPS25636A-200B3LI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a synchronous mode and operates on a supply voltage of 2.5/3.3V, making it suitable for industrial applications requiring fast access times and high memory density. The package style is grid array with thin profile, ideal for space-constrained designs.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PBGA-B165

e1

15 mm

9437184 bit

CACHE SRAM

36

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

13 mm

DS1245ABP-70IND by Maxim Integrated

DS1245ABP-70IND

Maxim Integrated

DS1245ABP-70IND by Maxim Integrated is a 128Kx8 SRAM with 70ns access time, operating at 5V. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular package with 34 terminals.

70 ns

R-XDMA-U34

e0

1048576 bit

NON-VOLATILE SRAM MODULE

8

1

34

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

UNSPECIFIED

MODULE,34LEAD,1.0

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J INVERTED

DUAL

IS61WV10248BLL-10MLI by Integrated Silicon Solution

IS61WV10248BLL-10MLI

Integrated Silicon Solution

IS61WV10248BLL-10MLI by Integrated Silicon Solution is a 1MX8 SRAM with 3.6V max supply voltage, 10ns access time, and 85°C max operating temp. Ideal for industrial applications requiring high-speed memory with a parallel interface in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

8

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.025 Amp

1.2 V

SRAMs

100 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

DS1220AD-200IND by Maxim Integrated

DS1220AD-200IND

Maxim Integrated

DS1220AD-200IND by Maxim Integrated is a 2Kx8 SRAM with 5V supply, operating in asynchronous mode. It has a max access time of 200ns and industrial temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

200 ns

R-XDMA-P24

e0

16384 bit

NON-VOLATILE SRAM MODULE

8

1

1

24

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

UNSPECIFIED

DIP

DIP24,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

260

5

Not Qualified

.005 Amp

SRAMs

15 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

40

DS1225Y-200IND by Maxim Integrated

DS1225Y-200IND

Maxim Integrated

DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.

200 ns

10 YEAR DATA RETENTION

R-XDMA-P28

e0

65536 bit

NON-VOLATILE SRAM MODULE

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

5

Not Qualified

.005 Amp

SRAMs

85 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

2.54 mm

DUAL

DS1230W-100IND by Maxim Integrated

DS1230W-100IND

Maxim Integrated

NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 256KX8;

100 ns

10 YEAR DATA RETENTION

R-PDIP-T28

e0

38.225 mm

2097152 bit

NON-VOLATILE SRAM MODULE

8

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

3.3

Not Qualified

10.668 mm

.00015 Amp

SRAMs

50 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

DS1270Y-70IND by Maxim Integrated

DS1270Y-70IND

Maxim Integrated

DS1270Y-70IND by Maxim Integrated is a 2MX8 SRAM with 2097152 words, 16777216 bit memory density, and 70 ns max access time. It operates in industrial temperature range (-40 to 85 °C) and is ideal for applications requiring non-volatile memory storage in microelectronic assemblies.

70 ns

5 YEAR DATA RETENTION

R-PDMA-P36

e0

16777216 bit

NON-VOLATILE SRAM MODULE

8

1

36

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

RECTANGULAR

MICROELECTRONIC ASSEMBLY

PARALLEL

Not Qualified

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

PIN/PEG

DUAL

IS62WV2568EBLL-45HLI by Integrated Silicon Solution

IS62WV2568EBLL-45HLI

Integrated Silicon Solution

IS62WV2568EBLL-45HLI by Integrated Silicon Solution is an 256Kx8 SRAM with a max access time of 45ns. Operating at 3V, it features a parallel interface and industrial temperature grade suitable for various memory applications. The package style is small outline, thin profile, making it ideal for space-constrained designs.

45 ns

R-PDSO-G32

e3

2097152 bit

STANDARD SRAM

8

3

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

DUAL

10