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INDUSTRIAL SRAM 319

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
DS1270W-100-IND by Dallas Semiconductor

DS1270W-100-IND

Dallas Semiconductor

DS1270W-100-IND by Dallas Semiconductor is a 2MX8 NON-VOLATILE SRAM with 16777216 bit memory density. It operates at 3.3V, has a max access time of 100ns, and is designed for INDUSTRIAL applications requiring reliable data storage in harsh environments.

100 ns

R-PDIP-T36

e0

16777216 bit

NON-VOLATILE SRAM

8

36

2097152 words

2M

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

DIP

DIP36,.6

RECTANGULAR

IN-LINE

3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

IS62C5128BL-45QLI-TR by Integrated Silicon Solution

IS62C5128BL-45QLI-TR

Integrated Silicon Solution

IS62C5128BL-45QLI-TR by Integrated Silicon Solution is a 512Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 45ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in industrial environments.

45 ns

COMMON

R-PDSO-G32

e3

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

.000015 Amp

2 V

SRAMs

20 mA

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution

IS61WV20488BLL-10TLI-TR

Integrated Silicon Solution

IS61WV20488BLL-10TLI-TR by Integrated Silicon Solution is a 2MX8 SRAM with 3-STATE output, operating at -40 to 85 °C. It has a memory density of 16Mbit and operates in parallel mode with access time of 10ns. Ideal for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PDSO-G44

16777216 bit

STANDARD SRAM

8

44

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

.025 Amp

1.2 V

SRAMs

100 mA

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

CY7C1021BNL-15ZSXAT by Cypress Semiconductor

CY7C1021BNL-15ZSXAT

Cypress Semiconductor

CY7C1021BNL-15ZSXAT by Cypress is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a max access time of 15ns and industrial temperature grade. Commonly used in applications requiring fast and reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-G44

1048576 bit

STANDARD SRAM

16

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

Not Qualified

AEC-Q100

.0005 Amp

4.5 V

SRAMs

130 mA

5

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

IS61LV25616AL-10BI-TR by Integrated Silicon Solution

IS61LV25616AL-10BI-TR

Integrated Silicon Solution

IS61LV25616AL-10BI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with a 3.3V supply voltage and an operating temperature range of -40 to 85°C. It features a parallel interface and has a max access time of 10ns. This memory IC is commonly used in industrial applications requiring high-speed data storage.

10 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3.3

Not Qualified

.015 Amp

2 V

SRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

IS61LV25616AL-10BLI-TR by Integrated Silicon Solution

IS61LV25616AL-10BLI-TR

Integrated Silicon Solution

IS61LV25616AL-10BLI-TR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. It features a grid array package style and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact form factors.

10 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3.3

Not Qualified

.015 Amp

2 V

SRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

CY7C1520KV18-250BZIT by Cypress Semiconductor

CY7C1520KV18-250BZIT

Cypress Semiconductor

CY7C1520KV18-250BZIT by Cypress Semiconductor is a 2MX36 SRAM with synchronous operation and 250 MHz clock frequency. It features 3-STATE output, operates at -40 to 85 °C, and has a memory density of 75497472 bit. Ideal for industrial applications requiring fast parallel memory access.

.45 ns

250 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

530 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

CY62147EV30LL-45B2XAT by Cypress Semiconductor

CY62147EV30LL-45B2XAT

Cypress Semiconductor

CY62147EV30LL-45B2XAT by Cypress Semiconductor is a 256Kx16 SRAM with 45 ns access time, operating at 2.5/3.3V. It features a grid array package style, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in electronic devices.

45 ns

COMMON

R-PBGA-B48

4194304 bit

STANDARD SRAM

16

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

.000007 Amp

1.5 V

SRAMs

20 mA

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NP5Q032AE3ESFC0E by Micron Technology

NP5Q032AE3ESFC0E

Micron Technology

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

R-PDSO-G16

33554432 bit

NON-VOLATILE SRAM

16

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

3/3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NP5Q064AE3ESFC0E by Micron Technology

NP5Q064AE3ESFC0E

Micron Technology

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G16

67108864 bit

NON-VOLATILE SRAM

16

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

3/3.3

Not Qualified

.0002 Amp

SRAMs

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR

Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 16-bit memory width and 16777216 bit density. Operating at 3.3V, it offers a max access time of 10ns and peak reflow temperature of 260°C. Ideal for industrial applications requiring fast and reliable parallel memory storage solutions.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

YES

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.2 mm

.025 Amp

2.4 V

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

9 mm

IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution

IS61WV25616BLS-25TLI-TR

Integrated Silicon Solution

IS61WV25616BLS-25TLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 3-STATE output. Operating at -40 to 85 °C, it has a standby voltage of 2V and max access time of 25ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

25 ns

COMMON

R-PDSO-G44

4194304 bit

STANDARD SRAM

16

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

.009 Amp

2 V

SRAMs

25 mA

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

R1Q3A7236ABB-33IB0 by Renesas Electronics

R1Q3A7236ABB-33IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 2MX36;

.45 ns

300 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

850 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1Q3A7218ABB-33IA0 by Renesas Electronics

R1Q3A7218ABB-33IA0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 75497472 bit;

.45 ns

300 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

820 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QEA7218ABG-19IB0 by Renesas Electronics

R1QEA7218ABG-19IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

.45 ns

533 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.87 Amp

1.7 V

SRAMs

1030 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QEA7236ABB-20IB0 by Renesas Electronics

R1QEA7236ABB-20IB0

Renesas Electronics

DDR II PLUS SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

.45 ns

500 MHz

COMMON

R-PBGA-B165

15 mm

75497472 bit

DDR II PLUS SRAM

36

3

1

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

NO

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.4 mm

1.7 V

SRAMs

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13 mm

R1QDA3636CBB-19IB0 by Renesas Electronics

R1QDA3636CBB-19IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;

.45 ns

533 MHz

SEPARATE

R-PBGA-B165

37748736 bit

STANDARD SRAM

36

3

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.91 Amp

1.7 V

SRAMs

1280 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QHA7236ABG-25IA0 by Renesas Electronics

R1QHA7236ABG-25IA0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

.55 ns

400 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.79 Amp

1.7 V

SRAMs

910 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QHA7236ABG-25IB0 by Renesas Electronics

R1QHA7236ABG-25IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Current: 910 mA;

.55 ns

400 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.79 Amp

1.7 V

SRAMs

910 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1Q4A7236ABG-33IB0 by Renesas Electronics

R1Q4A7236ABG-33IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

.45 ns

300 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

760 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1Q4A7236ABG-40IA0 by Renesas Electronics

R1Q4A7236ABG-40IA0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA165,11X15,40;

.45 ns

250 MHz

COMMON

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

680 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1Q2A7218ABB-40IA0 by Renesas Electronics

R1Q2A7218ABB-40IA0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 4MX18;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

890 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA3618CBG-20IB0 by Renesas Electronics

R1QDA3618CBG-20IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

.45 ns

500 MHz

SEPARATE

R-PBGA-B165

37748736 bit

STANDARD SRAM

18

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.83 Amp

1.7 V

SRAMs

1160 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA3618CBG-19IB0 by Renesas Electronics

R1QDA3618CBG-19IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 533 MHz;

.45 ns

533 MHz

SEPARATE

R-PBGA-B165

37748736 bit

STANDARD SRAM

18

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.87 Amp

1.7 V

SRAMs

1220 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QAA7236ABB-20IA0 by Renesas Electronics

R1QAA7236ABB-20IA0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .87 Amp;

.45 ns

500 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.87 Amp

1.7 V

SRAMs

1220 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QAA7218ABB-20IA0 by Renesas Electronics

R1QAA7218ABB-20IA0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA165,11X15,40;

.45 ns

500 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.83 Amp

1.7 V

SRAMs

1160 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA7236ABB-19IB0 by Renesas Electronics

R1QDA7236ABB-19IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 2097152 words;

.45 ns

533 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.91 Amp

1.7 V

SRAMs

1280 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA7218ABB-20IB0 by Renesas Electronics

R1QDA7218ABB-20IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

.45 ns

500 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.83 Amp

1.7 V

SRAMs

1160 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA7236ABG-22IB0 by Renesas Electronics

R1QDA7236ABG-22IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;

.45 ns

450 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.81 Amp

1.7 V

SRAMs

1130 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA7236ABG-19IB0 by Renesas Electronics

R1QDA7236ABG-19IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

533 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

36

3

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.91 Amp

1.7 V

SRAMs

1280 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA7218ABG-20IB0 by Renesas Electronics

R1QDA7218ABG-20IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Input/Output Type: SEPARATE;

.45 ns

500 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.83 Amp

1.7 V

SRAMs

1160 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1QDA7218ABG-19IB0 by Renesas Electronics

R1QDA7218ABG-19IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

533 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

18

3

165

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

.87 Amp

1.7 V

SRAMs

1220 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

R1Q2A7209ABG-40IB0 by Renesas Electronics

R1Q2A7209ABG-40IB0

Renesas Electronics

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

75497472 bit

STANDARD SRAM

9

3

165

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.7 V

SRAMs

760 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

AS6C4008-55STINTR by Alliance Memory

AS6C4008-55STINTR

Alliance Memory

Alliance Memory's AS6C4008-55STINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package and common I/O type in a rectangular shape. With 32 terminals and CMOS technology, this asynchronous memory offers high performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/5

Not Qualified

.00003 Amp

1.5 V

SRAMs

60 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

AS6C4008-55ZINTR by Alliance Memory

AS6C4008-55ZINTR

Alliance Memory

Alliance Memory's AS6C4008-55ZINTR is a 512Kx8 SRAM with 55ns access time, operating at 3/5V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.

55 ns

COMMON

R-PDSO-G32

e3

4194304 bit

STANDARD SRAM

8

3

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP32,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/5

Not Qualified

.00003 Amp

1.5 V

SRAMs

60 mA

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

CY7C1041CV33-8ZSXI by Cypress Semiconductor

CY7C1041CV33-8ZSXI

Cypress Semiconductor

CY7C1041CV33-8ZSXI by Cypress Semiconductor is a 256Kx16 SRAM with 8ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and parallel interface. Ideal for high-speed memory applications in industrial environments.

8 ns

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.194 mm

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY62177ESL-55ZXI by Cypress Semiconductor

CY62177ESL-55ZXI

Cypress Semiconductor

CY62177ESL-55ZXI by Cypress Semiconductor is a 2MX16 SRAM with 55 ns access time, operating at 3.6V. It features a small outline package, suitable for industrial applications requiring fast and reliable memory access in harsh environments. With 48 terminals and 16-bit memory width, it offers high-density storage in a compact form factor.

55 ns

ALSO OPERATES AT 5V SUPPLY

8

COMMON

R-PDSO-G48

e3

18.4 mm

33554432 bit

STANDARD SRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3,5

Not Qualified

1.2 mm

.000017 Amp

1.5 V

SRAMs

45 mA

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

20

12 mm

UPD44164182BF5-E33Y-EQ3-A by Renesas Electronics

UPD44164182BF5-E33Y-EQ3-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX18;

.45 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13 mm

UPD44164185BF5-E33Y-EQ3-A by Renesas Electronics

UPD44164185BF5-E33Y-EQ3-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13 mm

UPD44165182BF5-E50Y-EQ3-A by Renesas Electronics

UPD44165182BF5-E50Y-EQ3-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

.45 ns

R-PBGA-B165

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13 mm

7130LA100JI8 by Integrated Device Technology

7130LA100JI8

Integrated Device Technology

7130LA100JI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it features an access time of 100ns and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

100 ns

COMMON

S-PQCC-J52

e0

8192 bit

MULTI-PORT SRAM

8

3

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

7130LA55PFI8 by Integrated Device Technology

7130LA55PFI8

Integrated Device Technology

7130LA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at an industrial temperature grade, it has a max access time of 55ns and operates in parallel mode. Suitable for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G64

e0

8192 bit

MULTI-PORT SRAM

8

3

2

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

71321LA55JI8 by Integrated Device Technology

71321LA55JI8

Integrated Device Technology

71321LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 52 terminals in a chip carrier package, and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

16384 bit

MULTI-PORT SRAM

8

3

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA35JI8 by Integrated Device Technology

71342SA35JI8

Integrated Device Technology

71342SA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.015 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA55PFI8 by Integrated Device Technology

71342SA55PFI8

Integrated Device Technology

Integrated Device Technology's 71342SA55PFI8 is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. Featuring an access time of 55ns and a memory density of 32768 bits, it is ideal for industrial applications requiring fast and reliable parallel memory storage. The device comes in a square flatpack package with surface mount capability, making it suitable for various electronic systems.

55 ns

COMMON

S-PQFP-G64

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

.015 Amp

4.5 V

SRAMs

270 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

71421SA25PFI8 by Integrated Device Technology

71421SA25PFI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: QFP; Package Shape: SQUARE; Technology: CMOS;

25 ns

COMMON

S-PQFP-G64

e0

16384 bit

MULTI-PORT SRAM

8

3

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.03 Amp

4.5 V

SRAMs

270 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

CY7C1041DV33-10BVIT by Cypress Semiconductor

CY7C1041DV33-10BVIT

Cypress Semiconductor

CY7C1041DV33-10BVIT by Cypress Semiconductor is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e0

8 mm

4194304 bit

STANDARD SRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

CY7C1041DV33-10BVJXIT by Cypress Semiconductor

CY7C1041DV33-10BVJXIT

Cypress Semiconductor

CY7C1041DV33-10BVJXIT by Cypress is a 256Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a compact grid array package.

10 ns

COMMON

R-PBGA-B48

e1

8 mm

4194304 bit

STANDARD SRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1 mm

.01 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

20

6 mm