Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CY62256LL-70ZI
Cypress Semiconductor
CY62256LL-70ZI by Cypress Semiconductor is a 32KX8 SRAM with 70 ns access time, operating at 5V. It features common I/O type, 3-STATE output characteristics, and GULL WING terminal form. Ideal for industrial applications requiring fast and reliable memory storage in a compact package.
70 ns
COMMON
R-PDSO-G28
e0
11.8 mm
262144 bit
STANDARD SRAM
8
1
28
32768 words
32K
ASYNCHRONOUS
85 Cel
-40 Cel
32KX8
3-STATE
YES
PLASTIC/EPOXY
TSOP1
TSSOP28,.53,22
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
PARALLEL
5
Not Qualified
1.2 mm
2 V
SRAMs
50 mA
5.5 V
4.5 V
CMOS
INDUSTRIAL
TIN LEAD
GULL WING
.55 mm
DUAL
8 mm
DS1225Y-150-IND
Dallas Semiconductor
DS1225Y-150-IND by Dallas Semiconductor is an 8Kx8 non-volatile SRAM module with a memory density of 65536 bits. It operates at 5V, has a max access time of 150ns, and is designed for industrial temperature grades. This rectangular package with 28 terminals in-line is ideal for applications requiring reliable data storage in harsh environments.
150 ns
R-PDIP-T28
65536 bit
NON-VOLATILE SRAM MODULE
8192 words
8K
8KX8
DIP
DIP28,.6
IN-LINE
.005 Amp
85 mA
NO
Tin/Lead (Sn/Pb)
THROUGH-HOLE
2.54 mm
DS1225AD-200-IND
DS1225AD-200-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and is designed for industrial applications. The package style is in-line with through-hole terminals and a temperature range of -40 to 85°C.
200 ns
DS1225AD-70-IND
DS1225AD-70-IND by Dallas Semiconductor is an 8Kx8 SRAM with 65536 bit memory density. It operates at 5V, has a max access time of 70ns, and is designed for industrial applications requiring non-volatile memory storage.
DS1230Y-70-IND
DS1230Y-70-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.
10 YEARS DATA RETENTION PERIOD
DS1230Y-200-IND
DS1230Y-200-IND by Dallas Semiconductor is a 32Kx8 non-volatile SRAM module with 262144-bit memory density. Operating at 5V, it has a max access time of 200ns and can withstand industrial temperatures up to 85°C. Ideal for applications requiring reliable data storage in harsh environments.
DS1245AB-120-IND
DS1245AB-120-IND by Dallas Semiconductor is a 128Kx8 Non-Volatile SRAM Module with 120ns access time. Operating at 5V, it has a memory density of 1048576 bits and industrial temperature grade. Suitable for applications requiring reliable data storage in harsh environments.
120 ns
R-PDIP-T32
1048576 bit
32
131072 words
128K
128KX8
DIP32,.6
5.25 V
4.75 V
DS1245Y-70-IND
DS1245Y-70-IND by Dallas Semiconductor is a 128Kx8 non-volatile SRAM module with 70ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable data storage in harsh environments.
IDT71024S15TYI
Integrated Device Technology
IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.
15 ns
R-PDSO-J32
20.96 mm
3
SOJ
SOJ32,.34
SMALL OUTLINE
225
3.759 mm
.01 Amp
155 mA
J BEND
1.27 mm
30
7.62 mm
71V35761S183BGGI8
71V35761S183BGGI8 by Integrated Device Technology is a 128Kx36 CACHE SRAM with synchronous operation, 183 MHz clock frequency, and 3.3 ns access time. Ideal for industrial applications requiring high-speed data processing in compact systems.
3.3 ns
PIPELINED ARCHITECTURE
183 MHz
R-PBGA-B119
e1
22 mm
4718592 bit
CACHE SRAM
36
119
SYNCHRONOUS
128KX36
BGA
BGA119,7X17,50
GRID ARRAY
260
3.3
2.36 mm
.035 Amp
3.14 V
350 mA
3.465 V
3.135 V
TIN SILVER COPPER
BALL
BOTTOM
14 mm
71V35761S183BGGI
Integrated Device Technology's 71V35761S183BGGI is a 128KX36 CACHE SRAM with synchronous operation at 183 MHz. It features a 3-STATE output and operates at an industrial temperature range of -40 to 85 °C. Suitable for applications requiring fast access times and high memory density.
CY14MB256J2-SXI
CY14MB256J2-SXI by Cypress Semiconductor is a 32Kx8 NON-VOLATILE SRAM with 262144-bit memory density. Operating at 3V, it features SYNCHRONOUS mode and SERIAL interface. Ideal for industrial applications, this SRAM has a small outline package and operates b/w -40 to 85°C.
R-PDSO-G8
e4
4.889 mm
NON-VOLATILE SRAM
SOP
SOP8,.25
SERIAL
1.727 mm
.00015 Amp
3 mA
3.6 V
2.7 V
NICKEL PALLADIUM GOLD
3.8985 mm
CY62147EV30LL-45B2XA
CY62147EV30LL-45B2XA by Cypress Semiconductor is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and industrial temperature grade. It features a very thin profile grid array package for common asynchronous applications in parallel memory systems.
45 ns
R-PBGA-B48
4194304 bit
16
48
262144 words
256K
256KX16
VFBGA
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
2.5/3.3
1 mm
.000007 Amp
1.5 V
20 mA
2.2 V
.75 mm
6 mm
DS1220Y-100-IND
DS1220Y-100-IND by Dallas Semiconductor is a 2Kx8 Non-Volatile SRAM module with 100ns access time. Operating at 5V, it has an industrial temperature grade and consumes up to 85mA. Ideal for applications requiring reliable memory storage in harsh environments.
100 ns
R-PDIP-T24
16384 bit
24
2048 words
2K
2KX8
DIP24,.6
.004 Amp
DS1250Y-70-IND
DS1250Y-70-IND by Dallas Semiconductor is a 512Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in industrial environments.
10 YEAR DATA RETENTION PERIOD
R-XDIP-T32
524288 words
512K
512KX8
UNSPECIFIED
IDT71256SA25YI
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
25 ns
R-PDSO-J28
17.9324 mm
SOJ28,.34
3.556 mm
.015 Amp
145 mA
Tin/Lead (Sn85Pb15)
7.5184 mm
IS66WVE4M16EALL-70BLI
Integrated Silicon Solution
IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.
67108864 bit
PSEUDO STATIC RAM
4194304 words
4M
4MX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.7 V
25 mA
1.95 V
23A256-I/SN
Microchip Technology
23A256-I/SN by Microchip Technology is a 32Kx8 SRAM with 16 MHz clock frequency, operating at 1.8V. It features separate I/O, synchronous operation, and 3-STATE output. Ideal for industrial applications requiring high-speed memory access in a small outline package.
16 MHz
SEPARATE
e3
4.9 mm
SOP8,.23
1.8
1.75 mm
.000001 Amp
10 mA
Matte Tin (Sn)
40
3.9 mm
23A640-I/P
23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.
R-PDIP-T8
9.271 mm
DIP8,.3
TS 16949
5.334 mm
MATTE TIN
23A640-I/SN
Microchip Technology's 23A640-I/SN is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 1.8V, it offers a max clock frequency of 16MHz and features synchronous operation. Ideal for industrial applications requiring high-speed data storage in compact spaces.
23A640-I/ST
Microchip Technology's 23A640-I/ST is an 8Kx8 SRAM with a max clock frequency of 16MHz. Operating at 1.8V, it features separate I/O and offers a memory density of 65536 bits. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
.65 mm
3 mm
23K256-I/P
23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.
20 MHz
3/3.3
.000004 Amp
MT45W4MW16PCGA-70IT
Micron Technology
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;
1.8,1.8/3
.00014 Amp
Other Memory ICs
Tin/Silver/Copper (Sn/Ag/Cu)
IS61C25616AL-10KLI
IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.
10 ns
R-PDSO-J44
28.575 mm
44
3.75 mm
10
10.16 mm
CY7C1021BN-15ZXIT
CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
R-PDSO-G44
18.415 mm
65536 words
64K
64KX16
TSOP2
TSOP44,.46,32
1.194 mm
130 mA
.8 mm
20
CY7C1021BN-15VXIT
CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
3.7592 mm
BQ4010LYMA-70N
Texas Instruments
BQ4010LYMA-70N by Texas Instruments is an 8Kx8 SRAM with 3.3V supply, operating asynchronously at -40 to 85°C. It features a parallel interface, 70ns access time, and industrial temperature grade. Ideal for non-volatile memory applications in microelectronic assemblies due to its compact size and low power consumption of 30mA max.
R-XDMA-T28
37.72 mm
MICROELECTRONIC ASSEMBLY
NOT SPECIFIED
9.53 mm
.001 Amp
30 mA
3 V
CY62256VNLL-70ZIT
CY62256VNLL-70ZIT by Cypress is a 32Kx8 SRAM with 70ns access time, operating at 3V. It has a small outline package suitable for industrial applications. This CMOS memory IC offers parallel operation and 262144-bit memory density.
MT45W2MW16BGB-701IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;
SYNCHRONOUS BURST MODE ALSO POSSIBLE
R-PBGA-B54
33554432 bit
54
2097152 words
2M
2MX16
BGA54,6X9,30
1.8,1.8/3.3
.00011 Amp
40 mA
MT45W2MW16PGA-70IT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;
MT45W8MW16BGX-856AT
PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;
85 ns
10 mm
134217728 bit
8388608 words
8M
105 Cel
8MX16
IS61WV51216BLL-10MLI
IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.
11 mm
8388608 bit
512KX16
.02 Amp
1.2 V
95 mA
2.4 V
9 mm
CY7C1061BV33-8ZXI
CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.
8 ns
R-PDSO-G54
22.415 mm
16777216 bit
1048576 words
1M
1MX16
AS6C4008-55BIN
Alliance Memory
Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.
55 ns
R-PBGA-B36
BGA36,6X8,30
3/5
.00003 Amp
60 mA
AS6C4008-55STIN
Alliance Memory's AS6C4008-55STIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package with dual terminals and common I/O type. With low standby voltage of 2V and power consumption of 60mA, it offers reliable performance in various electronic devices.
R-PDSO-G32
LSSOP
TSSOP32,.56,20
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
1.25 mm
.5 mm
AS6C4008-55TIN
Alliance Memory's AS6C4008-55TIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 524288 words and parallel interface, it offers reliable memory storage in compact systems.
18.4 mm
TSSOP32,.8,20
AS6C1008-55TIN
Alliance Memory's AS6C1008-55TIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 131072 words and 1048576-bit memory density, this CMOS technology-based chip offers reliable performance in various electronic devices.
IS61WV25616BLS-25TLI
IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.
.009 Amp
MT45W2MW16BGB-701ITTR
BQ4013LYMA-70N
NON-VOLATILE SRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
R-PDMA-P32
42.8 mm
PIN/PEG
15.24 mm
BQ4015LYMA-70N
BQ4015LYMA-70N by Texas Instruments is a 512Kx8 SRAM module with 70ns access time, operating at 3.3V and 85°C max temp. Ideal for industrial applications, it offers non-volatile memory storage in a rectangular plastic package with 32 terminals.
BQ4011LYMA-70N
BQ4011LYMA-70N by Texas Instruments is a 32Kx8 SRAM module with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 70ns access time, and 262144-bit memory density. Ideal for industrial applications requiring non-volatile memory in a compact MICROELECTRONIC ASSEMBLY package.
R-PDMA-P28
IS61WV51232BLL-10BLI
IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.
R-PBGA-B90
13 mm
90
512KX32
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.45 mm
7008L20JI8
7008L20JI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.
20 ns
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE
S-PQCC-J84
29.3116 mm
524288 bit
MULTI-PORT SRAM
2
84
64KX8
QCCJ
LDCC84,1.2SQ
SQUARE
CHIP CARRIER
4.57 mm
335 mA
QUAD
7008L20PFI8
7008L20PFI8 by Integrated Device Technology is a 64Kx8 SRAM with 3-STATE output, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast access times of up to 20ns. This multi-port SRAM has a memory density of 524288 bits and can operate in parallel mode.
S-PQFP-G100
100
LFQFP
QFP100,.63SQ,20
FLATPACK, LOW PROFILE, FINE PITCH
240
1.6 mm
7008S55PFI8
7008S55PFI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage with common I/O type and 3-STATE output characteristics.
.03 Amp
310 mA
709289L9PFI
709289L9PFI by Integrated Device Technology is a synchronous SRAM with an organization of 64KX16. It operates at a max clock frequency of 66 MHz and has a memory density of 1,048,576 bits. This multi-port SRAM is commonly used in industrial applications requiring high-speed data storage and retrieval.
FLOW-THROUGH OR PIPELINED ARCHITECTURE
66 MHz
.006 Amp
430 mA
70V261L25PFI8
70V261L25PFI8 by Integrated Device Technology is a 16KX16 MULTI-PORT SRAM with a supply voltage of 3.3V. It operates asynchronously and has a max access time of 25ns. This SRAM is commonly used in industrial applications due to its low profile, fine pitch package style and wide temperature range (up to 85°C).
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
16384 words
16K
16KX16
.003 Amp
185 mA
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