Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CY7C1049D-10VXIT
Cypress Semiconductor
CY7C1049D-10VXIT by Cypress is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and 3-state output, suitable for industrial applications requiring fast and reliable memory storage. With parallel interface and common I/O type, it offers high performance in a compact form factor.
10 ns
COMMON
R-PDSO-J36
e4
23.495 mm
4194304 bit
STANDARD SRAM
8
3
1
36
524288 words
512K
ASYNCHRONOUS
85 Cel
-40 Cel
512KX8
3-STATE
PLASTIC/EPOXY
SOJ
SOJ36,.44
RECTANGULAR
SMALL OUTLINE
PARALLEL
260
5
Not Qualified
3.7592 mm
.01 Amp
2 V
SRAMs
90 mA
5.5 V
4.5 V
YES
CMOS
INDUSTRIAL
Nickel/Palladium/Gold (Ni/Pd/Au)
J BEND
1.27 mm
DUAL
40
10.16 mm
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA supply current. Ideal for industrial applications requiring fast and reliable parallel memory storage in a compact grid array package.
R-PBGA-B48
e1
9.5 mm
16777216 bit
16
48
1048576 words
1M
1MX16
VFBGA
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
3.3
1 mm
.025 Amp
175 mA
3.6 V
3 V
TIN SILVER COPPER
BALL
.75 mm
BOTTOM
8 mm
CY7C1061DV33-10ZSXIT
CY7C1061DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 175mA max supply current. Ideal for industrial applications requiring high-speed memory operations in a compact thin profile package.
R-PDSO-G54
e3
22.415 mm
54
TSOP2
TSOP54,.46,32
SMALL OUTLINE, THIN PROFILE
1.2 mm
Matte Tin (Sn)
GULL WING
.8 mm
20
CY7C1069DV33-10ZSXIT
CY7C1069DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 2Mx8 organization, operating at -40 to 85°C. It features a fast access time of 10ns, ideal for industrial applications requiring high-speed memory solutions in a compact thin profile package.
2097152 words
2M
2MX8
CY7C199CNL-15VXIT
CY7C199CNL-15VXIT by Cypress Semiconductor is a 32Kx8 SRAM with 3-STATE output, operating at -40 to 85°C. It has a supply voltage of 4.5-5.5V and max access time of 15ns. Ideal for industrial applications requiring fast, asynchronous memory with common I/O type in small outline package.
15 ns
R-PDSO-J28
17.907 mm
262144 bit
28
32768 words
32K
32KX8
SOJ28,.34
3.556 mm
.00015 Amp
80 mA
30
7.5 mm
CY7C199D-10ZXIT
CY7C199D-10ZXIT by Cypress Semiconductor is a 32Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
R-PDSO-G28
11.8 mm
TSOP1
TSSOP28,.53,22
.003 Amp
NICKEL PALLADIUM GOLD
.55 mm
MT45W2MW16BGB-708AT
Micron Technology
SRAMs; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;
70 ns
R-PBGA-B54
33554432 bit
105 Cel
2MX16
FBGA
BGA54,6X9,30
GRID ARRAY, FINE PITCH
1.8,1.8/3.3
.00011 Amp
Other Memory ICs
35 mA
MATTE TIN
N02L63W3AT25I
Onsemi
N02L63W3AT25I by Onsemi is a 128Kx16 SRAM with 131072 words, operating at 2.5/3.3V. It features a max access time of 70ns and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in compact electronic devices.
R-PDSO-G44
18.41 mm
2097152 bit
44
131072 words
128K
128KX16
LSSOP
TSOP44,.46,32
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
2.5/3.3
1.25 mm
.00001 Amp
1.8 V
16 mA
2.3 V
7007L20PFGI8
Integrated Device Technology
7007L20PFGI8 by Integrated Device Technology is a 32Kx8 MULTI-PORT SRAM with 3-STATE output, operating at 5V. It features a max access time of 20ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
20 ns
S-PQFP-G80
MULTI-PORT SRAM
2
80
QFP
QFP80,.64SQ
SQUARE
FLATPACK
275 mA
Matte Tin (Sn) - annealed
.635 mm
QUAD
7024L55PFI
7024L55PFI by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 4096 words and 16 memory width. Operating at -40 to 85 °C, it has an access time of 55 ns and consumes a max current of 0.004 Amp. Ideal for industrial applications requiring fast data access in a compact FLATPACK package.
55 ns
S-PQFP-G100
e0
65536 bit
100
4096 words
4K
4KX16
QFP100,.63SQ,20
240
.004 Amp
250 mA
TIN LEAD
.5 mm
70V25S25PFI8
70V25S25PFI8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with 3.3V supply, operating at -40 to 85°C. Featuring a fast access time of 25ns and low standby current of 0.015A, it's ideal for industrial applications requiring high-speed memory solutions.
25 ns
131072 bit
8192 words
8K
8KX16
.015 Amp
190 mA
Tin/Lead (Sn85Pb15)
CY7C1061AV33-10ZXIT
CY7C1061AV33-10ZXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable parallel memory operations in a compact package.
.05 Amp
IS61WV25616EDBLL-10BLI-TR
Integrated Silicon Solution
IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.
APPLICATION SPECIFIC SRAM
262144 words
256K
256KX16
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
.006 Amp
2.4 V
6 mm
IS61WV25616EDBLL-8BLI-TR
IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.
8 ns
45 mA
IS61WV25616EDBLL-8BLI
IS61WV25616EDBLL-8BLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, common I/O type, and 8ns max access time. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
3.63 V
2.97 V
IS61WV25616EDBLL-8TLI-TR
IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.
IS61WV25616EDBLL-8TLI
IS61WV25616EDBLL-8TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, common I/O type, and 8ns access time. Ideal for applications requiring fast and reliable memory storage in compact form factor.
CY7C131E-15NXI
CY7C131E-15NXI by Cypress Semiconductor is a 1Kx8 SRAM with 15ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact square package.
S-PQFP-G52
10 mm
8192 bit
52
1024 words
1K
1KX8
QFP52,.52SQ
2.5 mm
305 mA
.65 mm
AS6C4008A-55ZIN
Alliance Memory
Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.
R-PDSO-G32
e3/e6
20.95 mm
32
2.7 V
11.76 mm
23A1024-I/P
Microchip Technology
Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.
20 MHz
COMMON/SEPARATE
R-PDIP-T8
9.271 mm
1048576 bit
SYNCHRONOUS
128KX8
NO
DIP
DIP8,.3
IN-LINE
SERIAL
1.8/2
TS 16949
5.334 mm
.000004 Amp
1.7 V
10 mA
2.2 V
THROUGH-HOLE
2.54 mm
7.62 mm
23LCV512-I/P
23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.
524288 bit
65536 words
64K
64KX8
2.5 V
IS61WV6416EEBLL-10TLI
IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
64KX16
25 mA
AS7C316096A-10TINTR
Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.
R-PDSO-G48
18.4 mm
TSSOP48,.8,20
3/3.3
.04 Amp
1.5 V
160 mA
12 mm
AS7C316096A-10TIN
Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.
AS6C3216-55TIN
Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.
.002 Amp
1.2 V
AS7C316098A-10TIN
Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.
IS61LPS25618EC-200TQLI
IS61LPS25618EC-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a low profile FLATPACK package and operates in industrial temperature range. Ideal for applications requiring fast access time and high memory density.
3.1 ns
200 MHz
R-PQFP-G100
20 mm
4718592 bit
CACHE SRAM
18
256KX18
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
1.6 mm
.085 Amp
3.14 V
220 mA
3.465 V
3.135 V
10
14 mm
IS61VPS204836B-250B3LI
IS61VPS204836B-250B3LI by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 250 MHz clock frequency, 2.5V supply voltage, and 2.6 ns access time. It is ideal for industrial applications requiring fast and synchronous memory operations in a compact GRID ARRAY package with thin profile design.
2.6 ns
250 MHz
R-PBGA-B165
15 mm
75497472 bit
165
2MX36
TBGA
BGA165,11X15,40
GRID ARRAY, THIN PROFILE
2.5
2.38 V
2.625 V
2.375 V
13 mm
UPD46184185BF1-E33Y-EQ1-A
Renesas Electronics
DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-609 Code: e6;
.45 ns
e6
18874368 bit
DDR SRAM
1MX18
LBGA
GRID ARRAY, LOW PROFILE
1.46 mm
1.9 V
1.8
TIN BISMUTH
UPD46185184BF1-E40Y-EQ1-A
QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX18;
QDR SRAM
UPD46185364BF1-E40Y-EQ1-A
QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS;
512KX36
UPD46364362BF1-E40Y-EQ1-A
DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;
37748736 bit
1MX36
UPD46365184BF1-E33Y-EQ1-A
QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 13 mm;
2MX18
UPD46365184BF1-E40Y-EQ1-A
QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
UPD46365362BF1-E40Y-EQ1-A
QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
CY62256NLL-55ZXIT
CY62256NLL-55ZXIT by Cypress Semiconductor is a 32KX8 SRAM with a max access time of 55 ns. It operates asynchronously at a nominal voltage of 5V and has a small outline, thin profile package style. It is commonly used in industrial applications requiring high-speed memory storage.
50 mA
CY7C1049DV33-10ZSXIT
CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.
18.415 mm
1.194 mm
W968D6DAGX7I
Winbond Electronics
Winbond Electronics' W968D6DAGX7I is a 16Mx16 SRAM with 1.8V supply, 70ns access time, and 3-STATE output. Ideal for industrial applications, it features a very thin profile grid array package with common I/O type and asynchronous operation mode.
268435456 bit
PSEUDO STATIC RAM
16777216 words
16M
16MX16
NOT SPECIFIED
.0004 Amp
40 mA
1.95 V
AS7C316098A-10BINTR
Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.4 mm
AS7C34096A-12JINTR
Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.
12 ns
AS7C38096A-10BIN
Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.
8388608 bit
1MX8
AS7C38096A-10TIN
Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.
AS7C34098A-10TINTR
Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.
HM216514TTI5SE
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 524288 words;
512KX16
IS61NLP102418B-200TQLI
IS61NLP102418B-200TQLI by Integrated Silicon Solution is a 1MX18 SRAM with 1048576 words, 18874368 bit memory density, and 3 ns max access time. Ideal for industrial applications requiring fast synchronous operation in a compact FLATPACK package with low profile design.
3 ns
71V35761SA200BGGI
71V35761SA200BGGI by Integrated Device Technology is a 128KX36 CACHE SRAM with 3.3V supply voltage, operating synchronously at -40 to 85°C. Featuring a fast access time of 3.1 ns, it's ideal for industrial applications requiring high-speed parallel memory operations.
PIPELINED
R-PBGA-B119
119
128KX36
BGA
GRID ARRAY
71V3559S75BQI8
71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
7.5 ns
225
CYD18S36V18-167BBAI
CYD18S36V18-167BBAI by Cypress Semiconductor is a 512Kx36 MULTI-PORT SRAM with 167 MHz fCLK. Operating at -40 to 85 °C, it has a low profile GRID ARRAY package and consumes up to 780 mA at 1.5/1.8 Vsup. Ideal for industrial applications requiring fast access times and high memory density.
4 ns
PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V
167 MHz
S-PBGA-B256
17 mm
256
BGA256,16X16,40
1.5/1.8
1.7 mm
.35 Amp
1.4 V
780 mA
1.58 V
1.42 V
1.5
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