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7007L20PFGI8

Integrated Device Technology

7007L20PFGI8 by Integrated Device Technology

7007L20PFGI8 by Integrated Device Technology is a 32Kx8 MULTI-PORT SRAM with 3-STATE output, operating at 5V. It features a max access time of 20ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

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3

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 919 parts In-Stock

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$13.000

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AZTECH Wire

Italy . 655 parts In-Stock

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Component Stockers USA

USA . 246 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Aranea Global

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Overview

Unlock a world of seamless data processing with the 7007L20PFGI8 by Integrated Device Technology. Known for their top-notch quality and reliability, IDT's SRAM memory chips are designed for optimal performance in industrial applications. With a generous memory density of 262144 bits and lightning-fast access time of just 20 ns, this multi-port SRAM ensures efficient data handling and smooth operation. Trust in IDT to deliver cutting-edge technology that enhances your systems' capabilities and boosts overall productivity. Experience the difference with IDT's 7007L20PFGI8 SRAM - a game-changer in the world of memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring product longevity and easy handling.

Surface Mount: YES

Convenient surface mount feature for easy installation on circuit boards.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the SRAM without being synchronously connected to a clock signal, increasing flexibility.

Nominal Supply Voltage / Vsup (V): 5

Standard nominal supply voltage of 5V ensures compatibility with a wide range of systems.

Memory Density: 262144 bit

High memory density allows for storing a large amount of data efficiently.

Maximum Access Time: 20 ns

Fast access time ensures quick retrieval of data, improving overall system performance.

Technical Specifications

SRAM 7007L20PFGI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

20 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G80

JESD-609 Code:

e3

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

80

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP80,.64SQ

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

4.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

275 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

7007L20PFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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