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INDUSTRIAL SRAM 319

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI

Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

2.7 V

25 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

N01S818HAT22I by Onsemi

N01S818HAT22I

Onsemi

N01S818HAT22I by Onsemi is a 128KX8 SRAM with synchronous operation. It features a small outline, thin profile package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed memory access in compact electronic devices.

R-PDSO-G8

e3

4.4 mm

1048576 bit

STANDARD SRAM

8

3

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.1 mm

2.2 V

1.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

IS61WV204816BLL-10TLI by Integrated Silicon Solution

IS61WV204816BLL-10TLI

Integrated Silicon Solution

IS61WV204816BLL-10TLI by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at an industrial temperature grade of -40 to 85 °C and has a max access time of 10 ns. Ideal for applications requiring fast, asynchronous memory access in compact spaces.

10 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS61C1024AL-12KLI-TR by Integrated Silicon Solution

IS61C1024AL-12KLI-TR

Integrated Silicon Solution

IS61C1024AL-12KLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package, asynchronous operation, and 3-state output. Ideal for industrial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-J32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS7C351232-10BINTR by Alliance Memory

AS7C351232-10BINTR

Alliance Memory

Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

AS7C351232-10BIN by Alliance Memory

AS7C351232-10BIN

Alliance Memory

Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

IS62WV51216GBLL-45TLI by Integrated Silicon Solution

IS62WV51216GBLL-45TLI

Integrated Silicon Solution

IS62WV51216GBLL-45TLI by Integrated Silicon Solution is a 512Kx16 SRAM with a memory density of 8388608 bits. It operates in asynchronous mode with a max access time of 45 ns, suitable for industrial applications requiring fast and reliable data storage. The memory IC type is standard SRAM, featuring parallel interface and low power consumption at supply voltages ranging from 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

AS6C1008-55SINL by Alliance Memory

AS6C1008-55SINL

Alliance Memory

Alliance Memory's AS6C1008-55SINL is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it offers parallel interface, small outline package, and operates in temperature range of -40 to 85°C.

55 ns

LG-MAX

R-PDSO-G32

20.75 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

2.997 mm

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.303 mm

IS62WV51216HBLL-45B2LI by Integrated Silicon Solution

IS62WV51216HBLL-45B2LI

Integrated Silicon Solution

IS62WV51216HBLL-45B2LI by Integrated Silicon Solution is a 512Kx16 SRAM with 8388608-bit memory density. It operates at 3V, has a max access time of 45ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable data storage in compact devices.

45 ns

R-PBGA-B48

8 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR

Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

IS61WV204816BLL-10TLI-TR by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates at 3V, has a max access time of 10ns, and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

10 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at an industrial temperature grade of -40 to 85 °C, it offers a max access time of 45 ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR

Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with a memory density of 16Mbit. It operates asynchronously at a max access time of 45ns and has a temperature grade suitable for industrial applications.

45 ns

R-PBGA-B48

8 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at -40 to 85 °C, it has a max access time of 45 ns and uses CMOS technology. Ideal for industrial applications requiring fast, asynchronous memory with a supply voltage range of 2.2V to 3.6V.

45 ns

R-PDSO-G48

18.4 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR

Integrated Silicon Solution

IS62WV10248EBLL-45TLI-TR by Integrated Silicon Solution is a 1MX8 SRAM with 1048576 words and 8388608 bit memory density. Operating at -40 to 85 °C, it has a max access time of 45 ns. Ideal for industrial applications requiring fast, asynchronous memory with a parallel interface.

45 ns

R-PDSO-G44

18.41 mm

8388608 bit

STANDARD SRAM

8

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV51216GBLL-45TLI-TR by Integrated Silicon Solution is a 512Kx16 SRAM with a max access time of 45ns. Operating at 3V, it features an industrial temperature grade and parallel interface. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

45 ns

R-PDSO-G48

18.4 mm

8388608 bit

STANDARD SRAM

16

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.2 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

70 ns

R-PBGA-B48

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

R-PBGA-B24

8 mm

134217728 bit

PSEUDO STATIC RAM

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

36 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

40 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

23LC1024-I/SNVAO by Microchip Technology

23LC1024-I/SNVAO

Microchip Technology

Microchip Technology's 23LC1024-I/SNVAO is a 128KX8 SRAM with synchronous operation and 3-STATE output. It operates at up to 20 MHz clock frequency, suitable for industrial applications requiring high-speed memory access. With a small outline package style and low standby current of 0.00001 Amp, it is ideal for space-constrained designs in automotive electronics.

20 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

AEC-Q100; TS 16949

1.75 mm

.00001 Amp

2.5 V

10 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

48L256-I/SN by Microchip Technology

48L256-I/SN

Microchip Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0003 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512-I/SN by Microchip Technology

48L512-I/SN

Microchip Technology

48L512-I/SN by Microchip Technology is a 64KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features 3-STATE output characteristics and operates on CMOS technology. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L512T-I/SN by Microchip Technology

48L512T-I/SN

Microchip Technology

48L512T-I/SN by Microchip is a 64KX8 SRAM with 66 MHz clock frequency, 3-STATE output, and operates at -40 to 85 °C. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

524288 bit

STANDARD SRAM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640-I/SN by Microchip Technology

48L640-I/SN

Microchip Technology

48L640-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates at a max clock frequency of 66 MHz and has a min standby voltage of 2.7 V. Ideal for industrial applications requiring fast synchronous memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48L640T-I/SN by Microchip Technology

48L640T-I/SN

Microchip Technology

48L640T-I/SN by Microchip Technology is an 8Kx8 SRAM with a memory density of 65536 bit. It operates in synchronous mode at a max clock frequency of 66 MHz, suitable for industrial applications requiring fast and reliable data storage. With a small outline package style and common I/O type, it offers high performance in a compact form factor.

66 MHz

COMMON

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

48LM01-I/SM by Microchip Technology

48LM01-I/SM

Microchip Technology

48LM01-I/SM by Microchip Technology is a 128KX8 SRAM with synchronous operation and 66 MHz clock frequency. Ideal for industrial applications, it features a small outline package, 3-STATE output, and operates in the -40 to 85 °C temperature range.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

48LM01T-I/SM by Microchip Technology

48LM01T-I/SM

Microchip Technology

48LM01T-I/SM by Microchip Technology is a 128KX8 SRAM with 66 MHz clock frequency, operating at -40 to 85 °C. It features synchronous operation, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed memory access in a small outline package.

66 MHz

COMMON

R-PDSO-G8

e3

5.26 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.03 mm

.0002 Amp

2.7 V

5 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

NO

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.2 mm

.00004 Amp

1.7 V

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution

IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

33554432 bit

STANDARD SRAM

8

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

1.65 V

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution

IS66WVS2M8BLL-104NLI

Integrated Silicon Solution

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

16777216 bit

STANDARD SRAM

8

1

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm