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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
W25Q16JVSNJQ by Winbond Electronics

W25Q16JVSNJQ

Winbond Electronics

W25Q16JVSNJQ by Winbond Electronics is a 16Mb Flash Memory with synchronous operation, 133 MHz clock frequency, and 3V supply voltage. It is ideal for industrial applications requiring high-speed data storage in a small outline package.

1

133 MHz

R-PDSO-G8

4.85 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

1.75 mm

3.6 V

3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

W25Q16JVSSJQ by Winbond Electronics

W25Q16JVSSJQ

Winbond Electronics

W25Q16JVSSJQ by Winbond Electronics is a 16Mb flash memory with synchronous operation, 133 MHz clock frequency, and 2Mx8 organization. It is ideal for industrial applications requiring high-speed data storage in a compact package. With a small outline design and serial interface, it offers reliable performance in harsh environments at temperatures ranging from -40°C to 105°C.

1

133 MHz

S-PDSO-G8

5.23 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.16 mm

3.6 V

3 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.23 mm

W25Q64JVSSJM by Winbond Electronics

W25Q64JVSSJM

Winbond Electronics

W25Q64JVSSJM by Winbond Electronics is a 64Mb NOR flash memory with 8MX8 organization, operating at up to 133MHz. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring high endurance of 100K cycles. With small outline package style and low standby current of 0.00005A, it's ideal for compact devices needing reliable non-volatile memory storage.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.16 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

W25Q64JVSSJQ by Winbond Electronics

W25Q64JVSSJQ

Winbond Electronics

Winbond Electronics' W25Q64JVSSJQ is a 3.3V NOR flash memory with 8MX8 organization, SPI serial bus type, and 133 MHz clock frequency. Ideal for industrial applications, it offers 100000 write/erase cycles endurance and operates in a temperature range of -40 to 105 °C.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.16 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

IS29GL128-70SLEB by Integrated Silicon Solution

IS29GL128-70SLEB

Integrated Silicon Solution

IS29GL128-70SLEB by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. It operates at 3V, has a max access time of 70ns, and supports asynchronous mode. Ideal for industrial applications requiring high-speed parallel memory with a small outline package design.

70 ns

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

1

1

56

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

14 mm

IS25LQ040B-JNLE-TR by Integrated Silicon Solution

IS25LQ040B-JNLE-TR

Integrated Silicon Solution

IS25LQ040B-JNLE-TR by Integrated Silicon Solution is a 512Kx8 NOR Flash Memory with synchronous operation at 104 MHz clock frequency. Ideal for industrial applications, it has a memory density of 4Mb and operates within a temperature range of -40 to 105°C.

CLOCK FREQUENCY FOR READ MODE 33 MHZ

1

104 MHz

R-PDSO-G8

e3

4.9 mm

4194304 bit

FLASH

8

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

MT29F4G08ABADAWP-AATX:DTR by Micron Technology

MT29F4G08ABADAWP-AATX:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

8

1

48

536870912 words

512M

ASYNCHRONOUS

105 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

IS25LQ010B-JNLE-TR by Integrated Silicon Solution

IS25LQ010B-JNLE-TR

Integrated Silicon Solution

IS25LQ010B-JNLE-TR by Integrated Silicon Solution is a 128KX8 Flash Memory with 104 MHz clock frequency, operating at -40 to 105 °C. Ideal for industrial applications, it features a serial interface, 1.27 mm terminal pitch, and 1048576 bit memory density.

1

104 MHz

R-PDSO-G8

e3

4.9 mm

1048576 bit

FLASH

8

1

1

8

131072 words

128K

SYNCHRONOUS

105 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

W25Q128JVSJQ by Winbond Electronics

W25Q128JVSJQ

Winbond Electronics

Winbond Electronics' W25Q128JVSJQ is a 16MX8 NOR Flash Memory with 133 MHz clock frequency, SPI serial bus type. Operating at -40 to 125 °C, it offers 100000 Write/Erase cycles and has a memory density of 134217728 bits. Ideal for industrial applications requiring high-speed data storage in compact devices.

4

133 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.16 mm

SPI

.00006 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

PC28F128P33BF60A by Micron Technology

PC28F128P33BF60A

Micron Technology

Micron Technology's PC28F128P33BF60A is a 8MX16 NOR flash memory with 64 terminals. Operating at 3V, it offers 134217728 bits of memory density and supports synchronous mode. With a temperature range of -40 to 85°C, it is ideal for industrial applications requiring fast access times and low standby current.

60 ns

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MT25QL128ABB8E12-0AUT by Micron Technology

MT25QL128ABB8E12-0AUT

Micron Technology

Micron Technology's MT25QL128ABB8E12-0AUT is a 16MX8 flash memory with 133 MHz clock frequency, suitable for automotive applications. Operating at 3V, it offers 16777216 words of memory with a density of 134217728 bits. The package style is grid array, thin profile, making it ideal for space-constrained designs.

1

133 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS21ES04G-JCLI-TR by Integrated Silicon Solution

IS21ES04G-JCLI-TR

Integrated Silicon Solution

IS21ES04G-JCLI-TR by Integrated Silicon Solution is a synchronous flash memory with 4GX8 organization, 34359738368 bit memory density, and operates at industrial temperature grade. It features a very thin profile grid array package with 153 terminals and is suitable for applications requiring high-speed data storage in industrial environments.

R-PBGA-B153

13 mm

34359738368 bit

FLASH

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS21ES08G-JCLI-TR by Integrated Silicon Solution

IS21ES08G-JCLI-TR

Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution is an 8GX8 flash memory with 68719476736 bit density. Operating at 3.3V, it features a very thin profile grid array package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed synchronous flash memory with parallel interface.

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS25LP032D-JBLA3-TR by Integrated Silicon Solution

IS25LP032D-JBLA3-TR

Integrated Silicon Solution

IS25LP032D-JBLA3-TR by Integrated Silicon Solution is a 32Mb Flash Memory with 4Mx8 organization, operating at up to 133MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level and wide temperature range (-40°C to 125°C). Package style is small outline, suitable for surface mount with dual terminal position.

133 MHz

S-PDSO-G8

5.28 mm

33554432 bit

FLASH

8

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

AEC-Q100

2.16 mm

3.6 V

2.3 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.28 mm

IS25LP032D-JMLE-TR by Integrated Silicon Solution

IS25LP032D-JMLE-TR

Integrated Silicon Solution

IS25LP032D-JMLE-TR by Integrated Silicon Solution is a 32Mb Flash Memory with synchronous operation, 133MHz clock frequency, and 3V supply voltage. It is ideal for industrial applications requiring high-speed data storage in a small outline package.

1

133 MHz

R-PDSO-G16

10.31 mm

33554432 bit

FLASH

8

1

16

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25LP128-JKLE-TR by Integrated Silicon Solution

IS25LP128-JKLE-TR

Integrated Silicon Solution

IS25LP128-JKLE-TR by Integrated Silicon Solution is a 16MX8 flash memory with 133 MHz clock frequency, 3-state output, and 100000 write/erase cycles. It operates in synchronous mode at -40 to 105 °C, suitable for industrial applications requiring high-speed data storage and retrieval.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.2

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

.8 mm

4-WIRE

.000065 Amp

14 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

HARDWARE/SOFTWARE

IS25LP256D-RMLE-TR by Integrated Silicon Solution

IS25LP256D-RMLE-TR

Integrated Silicon Solution

IS25LP256D-RMLE-TR by Integrated Silicon Solution is a 32MX8 Flash Memory with 268Mbit memory density. It operates at 133MHz clock frequency, suitable for industrial applications. With a supply voltage range of 2.3V to 3.6V, it offers synchronous operation in a small outline package for space-constrained designs.

133 MHz

R-PDSO-G16

10.31 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25LP512M-RMLE-TR by Integrated Silicon Solution

IS25LP512M-RMLE-TR

Integrated Silicon Solution

IS25LP512M-RMLE-TR by Integrated Silicon Solution is a 64MX8 flash memory with 536870912 bit density. It operates at 133 MHz clock frequency, suitable for industrial applications. With a supply voltage range of 2.3V to 3.6V, it offers synchronous operation in a small outline package for space-constrained designs.

1

133 MHz

R-PDSO-G16

10.31 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25LQ025B-JNLE-TR by Integrated Silicon Solution

IS25LQ025B-JNLE-TR

Integrated Silicon Solution

IS25LQ025B-JNLE-TR by Integrated Silicon Solution is a 256Kx1 Flash Memory with synchronous operation at up to 104MHz. It has a small outline package, operates in industrial temperature range (-40°C to 105°C), and supports serial communication. Ideal for applications requiring high-speed data storage in compact electronic devices.

104 MHz

R-PDSO-G8

e3

4.9 mm

262144 bit

FLASH

1

1

8

262144 words

256K

SYNCHRONOUS

105 Cel

-40 Cel

256KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

IS25LQ032B-JBLE-TR by Integrated Silicon Solution

IS25LQ032B-JBLE-TR

Integrated Silicon Solution

IS25LQ032B-JBLE-TR by Integrated Silicon Solution is a 32Mbit Flash Memory with synchronous operation, operating at up to 104MHz clock frequency. It has a small outline package and is suitable for industrial temperature grade applications. With a memory density of 33554432 bits, it offers reliable data storage in various electronic devices.

104 MHz

S-PDSO-G8

5.28 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

2.16 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.28 mm

IS25LQ512B-JULE-TR by Integrated Silicon Solution

IS25LQ512B-JULE-TR

Integrated Silicon Solution

IS25LQ512B-JULE-TR by Integrated Silicon Solution is a 512Kx1 Flash Memory with synchronous operation, 104 MHz clock frequency, and serial interface. It operates at temperatures ranging from -40 to 105 °C and has a memory density of 524288 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

104 MHz

R-PDSO-N8

3 mm

524288 bit

FLASH

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.6 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

IS25WP016D-JBLE-TR by Integrated Silicon Solution

IS25WP016D-JBLE-TR

Integrated Silicon Solution

IS25WP016D-JBLE-TR by Integrated Silicon Solution is a 16Mb Flash Memory with 2MX8 organization, operating at up to 133MHz clock frequency. It features a small outline package style and is suitable for industrial applications requiring high-speed synchronous operation.

1

133 MHz

S-PDSO-G8

5.28 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.28 mm

IS25WP064A-JLLE-TR by Integrated Silicon Solution

IS25WP064A-JLLE-TR

Integrated Silicon Solution

IS25WP064A-JLLE-TR by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. Operating at 133 MHz clock frequency, it has a supply voltage range of 1.65V to 1.95V and temperature grade of INDUSTRIAL. Ideal for applications requiring high-speed data storage in compact devices.

1

133 MHz

R-PDSO-N8

8 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.85 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

IS25WP064A-JMLE-TR by Integrated Silicon Solution

IS25WP064A-JMLE-TR

Integrated Silicon Solution

IS25WP064A-JMLE-TR by Integrated Silicon Solution is a 64Mb Flash Memory with 8MX8 organization, operating at 133MHz clock frequency. It has a supply voltage range of 1.65V to 1.95V and is ideal for industrial applications requiring high-speed synchronous operation in small outline packages.

133 MHz

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25WP064A-RHLE-TR by Integrated Silicon Solution

IS25WP064A-RHLE-TR

Integrated Silicon Solution

IS25WP064A-RHLE-TR by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. It operates at a max clock frequency of 133 MHz and has a package style of GRID ARRAY, THIN PROFILE. Ideal for industrial applications requiring high-speed synchronous operation in a compact form factor.

133 MHz

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS25WP064A-RMLE-TR by Integrated Silicon Solution

IS25WP064A-RMLE-TR

Integrated Silicon Solution

IS25WP064A-RMLE-TR by Integrated Silicon Solution is a 64Mb Flash Memory with 8MX8 organization, operating at up to 133MHz clock frequency. It has a small outline package style and is suitable for industrial temperature grade applications. With synchronous operation and serial interface, it offers high memory density of 67108864 bits for various embedded systems.

133 MHz

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25WP080D-JBLE-TR by Integrated Silicon Solution

IS25WP080D-JBLE-TR

Integrated Silicon Solution

IS25WP080D-JBLE-TR by Integrated Silicon Solution is a 1MX8 Flash Memory with 133 MHz clock frequency, operating at 1.8V. Ideal for industrial applications, it offers 8388608-bit memory density in a small outline package with synchronous operation and serial interface.

133 MHz

S-PDSO-G8

5.28 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

105 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.16 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.28 mm

IS25WP256E-JLLE-TR by Integrated Silicon Solution

IS25WP256E-JLLE-TR

Integrated Silicon Solution

IS25WP256E-JLLE-TR by Integrated Silicon Solution is a synchronous flash memory with 32MX8 organization and 268435456-bit memory density. It operates at a max clock frequency of 166 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

1

166 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

IS25WP512M-JLLE-TR by Integrated Silicon Solution

IS25WP512M-JLLE-TR

Integrated Silicon Solution

IS25WP512M-JLLE-TR by Integrated Silicon Solution is a 64MX8 Flash Memory with 536870912 bit memory density. Operating at 133 MHz, it has a supply voltage of 1.65V to 1.95V and temperature range of -40°C to 105°C. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

1

133 MHz

R-PDSO-N8

8 mm

536870912 bit

FLASH

8

1

8

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

IS37SML01G1-LLI-TR by Integrated Silicon Solution

IS37SML01G1-LLI-TR

Integrated Silicon Solution

IS37SML01G1-LLI-TR by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 3.3V programming voltage and 104 MHz clock frequency. Ideal for industrial applications, it operates in synchronous mode with a temperature range of -40 to 85 °C and offers a memory density of 1073741824 bits.

104 MHz

R-PDSO-N8

8 mm

1073741824 bit

FLASH

8

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.85 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

6 mm

IS37SML01G1-MLI-TR by Integrated Silicon Solution

IS37SML01G1-MLI-TR

Integrated Silicon Solution

IS37SML01G1-MLI-TR by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 3.3V programming voltage and 104 MHz clock frequency. Ideal for industrial applications, it operates in synchronous mode with a temperature range of -40 to 85 °C, featuring a small outline package style for surface mount assembly.

104 MHz

R-PDSO-G16

10.31 mm

1073741824 bit

FLASH

8

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.65 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

7.49 mm

MTFC16GAKAEJP-4MIT by Micron Technology

MTFC16GAKAEJP-4MIT

Micron Technology

MTFC16GAKAEJP-4MIT by Micron Technology is a 16GX8 Flash Memory with 17179869184 words capacity. Operating in synchronous mode, it has a memory width of 8 and memory density of 137438953472 bit. Ideal for industrial applications, this very thin profile package offers parallel programming with a terminal pitch of 0.5 mm.

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAKAEJP-4MIT by Micron Technology

MTFC32GAKAEJP-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

EM04APGD4-BA000-2 by Delkin Devices

EM04APGD4-BA000-2

Delkin Devices

Delkin Devices' EM04APGD4-BA000-2 is a Flash Memory with 4GX8 organization, 34359738368 bit memory density, and operates at 3.3V. Ideal for industrial applications, it features a very thin profile GRID ARRAY package with 153 terminals and can withstand temperatures from -40 to 85 °C.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

EM04APYD3-BA000-2 by Delkin Devices

EM04APYD3-BA000-2

Delkin Devices

Delkin Devices' EM04APYD3-BA000-2 is a 4GX8 flash memory card with 34359738368 bit memory density. Operating at 3.3V, it features a very thin profile and fine pitch design for industrial applications. With a temperature range of -40 to 85 °C, this rectangular package offers synchronous operation in parallel mode.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS25LP064D-JBLE by Integrated Silicon Solution

IS25LP064D-JBLE

Integrated Silicon Solution

IS25LP064D-JBLE by Integrated Silicon Solution is an 8MX8 flash memory with a memory density of 67108864 bit. It operates in synchronous mode at a max clock frequency of 166 MHz, suitable for industrial applications requiring reliable and high-speed data storage. The small outline package with gull wing terminals makes it ideal for space-constrained designs.

1

166 MHz

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

250

3

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

5.28 mm

MT29F256G08CMCBBH2-10:B by Micron Technology

MT29F256G08CMCBBH2-10:B

Micron Technology

FLASH; Terminal Finish: TIN SILVER COPPER; JESD-609 Code: e1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Programming Voltage (V): 3.3;

e1

FLASH

260

3.3

TIN SILVER COPPER

30

MLC NAND TYPE

MTFC8GAMALBH-AIT by Micron Technology

MTFC8GAMALBH-AIT

Micron Technology

MTFC8GAMALBH-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at -40 to 85°C. It features a thin profile package style with 153 terminals and uses parallel programming mode. Ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLGDM-AITZ by Micron Technology

MTFC4GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDM-3MAIT by Micron Technology

MTFC4GMWDM-3MAIT

Micron Technology

MTFC4GMWDM-3MAIT by Micron Technology is a 4GX8 flash memory with 34359738368 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDQ-3MAIT by Micron Technology

MTFC4GMWDQ-3MAIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

14 mm

MTFC4GLMDQ-AITZ by Micron Technology

MTFC4GLMDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAITZ by Micron Technology

MTFC8GLWDQ-3LAITZ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MT29F64G08CFACAWP-Z:C by Micron Technology

MT29F64G08CFACAWP-Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PDSO-G48

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F32G08CBACAWP-ITZ:C by Micron Technology

MT29F32G08CBACAWP-ITZ:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F32G08CBACAWP-Z:C by Micron Technology

MT29F32G08CBACAWP-Z:C

Micron Technology

Micron Technology's MT29F32G08CBACAWP-Z:C is a 3.3V MLC NAND Flash Memory with 4GX8 organization, operating in commercial temperature grade. It features 48 terminals, 0.5mm pitch, and offers 34359738368-bit memory density. Ideal for applications requiring high-speed data storage and retrieval in compact devices.

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F64G08CFACBWP-12Z:C by Micron Technology

MT29F64G08CFACBWP-12Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

R-PDSO-G48

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

6ES7954-8LE03-0AA0 by Siemens

6ES7954-8LE03-0AA0

Siemens

Siemens 6ES7954-8LE03-0AA0 is a rectangular flash memory chip with 12Mx8 organization, operating at 3.3V. It offers 12582912 words capacity and 100663296 bits density, suitable for asynchronous applications requiring high-speed data storage in surface-mount designs.

R-XUUC-N

100663296 bit

FLASH CARD

8

1

12582912 words

12M

ASYNCHRONOUS

12MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

3.3

3.3

YES

CMOS

NO LEAD

UPPER

NOT SPECIFIED