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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
IS25LP256D-RMLE by Integrated Silicon Solution

IS25LP256D-RMLE

Integrated Silicon Solution

IS25LP256D-RMLE by Integrated Silicon Solution is a 32MX8 NOR type flash memory with 268MB density. It operates at 133MHz clock frequency, has 100K write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring high-speed data storage in compact devices.

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.31 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

SPI

.00003 Amp

30 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.49 mm

HARDWARE/SOFTWARE

MT29F32G08AECCBH1-10:C by Micron Technology

MT29F32G08AECCBH1-10:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

20 ns

YES

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

8K

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-IT:C by Micron Technology

MT29F32G08AFACAWP-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP:C by Micron Technology

MT29F32G08AFACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-Z:C by Micron Technology

MT29F32G08AFACAWP-Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 4G;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AECCBH1-10Z:C by Micron Technology

MT29F32G08AECCBH1-10Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: VBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B100;

20 ns

YES

NO

R-PBGA-B100

18 mm

34359738368 bit

FLASH

8

1

8K

100

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

MT29F16G08ABACAWP-Z:C by Micron Technology

MT29F16G08ABACAWP-Z:C

Micron Technology

Micron Technology's MT29F16G08ABACAWP-Z:C is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 512K sector size. It operates synchronously at temperatures b/w 0-70°C and has a max access time of 20ns. Ideal for applications requiring high-speed data storage in compact devices.

20 ns

YES

NO

R-PDSO-G48

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology

MT29F16G08ABCCBH1-10ITZ:C

Micron Technology

MT29F16G08ABCCBH1-10ITZ:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 512K sector size. It operates synchronously in industrial temperatures, featuring a parallel interface with 100 terminals. Ideal for applications requiring fast access times and high memory density.

20 ns

YES

NO

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

12 mm

S40410081B1B1I000 by Cypress Semiconductor

S40410081B1B1I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1I000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at -40 to 85 °C, it has a supply voltage range of 2.7-3.6 V and features synchronous operation for industrial applications.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B1W000 by Cypress Semiconductor

S40410081B1B1W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1W000 is a synchronous flash memory with 8GX8 organization, MLC NAND type, and 68719476736-bit memory density. It operates at 3V with a temperature range of -25 to 85 °C. Suitable for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B2I000 by Cypress Semiconductor

S40410081B1B2I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2I000 is a 100-terminal, 8GX8 organization, MLC NAND flash memory with 68719476736-bit density. Operating at -40 to 85 °C, it features synchronous mode and parallel interface for industrial applications. Package: PLASTIC/EPOXY, RECTANGULAR shape, GRID ARRAY style with low profile.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410081B1B2W000 by Cypress Semiconductor

S40410081B1B2W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2W000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at 3V, it offers 8589934592 words and features synchronous operation in a low profile grid array package. Ideal for applications requiring high memory capacity and fast data access speeds.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B1I010 by Cypress Semiconductor

S40410161B1B1I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1I010 is a 16GX8 MLC NAND Flash Memory with 17179869184 words capacity. Operating at -40 to 85 °C, it has a supply voltage range of 2.7V to 3.6V for industrial applications. This rectangular package features a very thin profile, fine pitch grid array design suitable for synchronous operations in various electronic devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B1W010 by Cypress Semiconductor

S40410161B1B1W010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1W010 is a 16GX8 MLC NAND flash memory with 17179869184 words. Operating at 3V, it has a memory density of 137438953472 bits and supports synchronous mode. With a very thin profile and fine pitch grid array package, it is ideal for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B2I010 by Cypress Semiconductor

S40410161B1B2I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B2I010 is a 16GX8 MLC NAND flash memory with 137.4 Gb density. Operating at 3V, it has a temperature range of -40 to 85°C and uses synchronous parallel technology. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package measuring 18mm x 14mm x 1.4mm.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B2W010 by Cypress Semiconductor

S40410161B1B2W010

Cypress Semiconductor

S40410161B1B2W010 by Cypress Semiconductor is a 16GX8 MLC NAND Flash Memory with 137.4Gb density. Operating at 3V, it has a low profile grid array package and synchronous mode for parallel programming. Ideal for applications requiring high memory capacity in compact devices with temperatures ranging from -25 to 85°C.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F8G08ABABAWP:B by Micron Technology

MT29F8G08ABABAWP:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MTFDDAK120MBD-1AK12ITYY by Micron Technology

MTFDDAK120MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Code: XFM; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

R-XXFM-X22

1030792151040 bit

FLASH MODULE

8

1

22

128849018880 words

120G

ASYNCHRONOUS

85 Cel

-40 Cel

120GX8

UNSPECIFIED

XFM

RECTANGULAR

FLANGE MOUNT

5

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

UNSPECIFIED

UNSPECIFIED

MLC NAND TYPE

MT25QU256ABA8ESF-MSIT by Micron Technology

MT25QU256ABA8ESF-MSIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;

166 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

1

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

IS34ML04G084-TLI by Integrated Silicon Solution

IS34ML04G084-TLI

Integrated Silicon Solution

IS34ML04G084-TLI by Integrated Silicon Solution is a 512Mx8 SLC NAND Flash Memory with 3.3V programming voltage. Operating in synchronous mode, it has a memory density of 4294967296 bits and operates at industrial temperature grade. Suitable for applications requiring high-speed data storage and retrieval in compact devices.

R-PDSO-G48

e3

18.4 mm

4294967296 bit

FLASH

8

1

48

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

IS25WP064A-RHLE by Integrated Silicon Solution

IS25WP064A-RHLE

Integrated Silicon Solution

IS25WP064A-RHLE by Integrated Silicon Solution is an 8MX8 NOR Flash Memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase cycles and SPI serial bus type for industrial applications.

1

133 MHz

20

100000 Write/Erase Cycles

S-PBGA-B24

e1

5 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

.000035 Amp

29 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

NOR TYPE

5 mm

HARDWARE/SOFTWARE

LE25S161PCTXG by Onsemi

LE25S161PCTXG

Onsemi

LE25S161PCTXG by Onsemi is a 2MX8 NOR Flash Memory with 70MHz clock frequency, SPI serial bus type. Operating at -40 to 90 °C, it has 100K write/erase cycles and 1.65-1.95V supply voltage range. Ideal for industrial applications requiring high endurance and fast data access in compact designs.

70 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

e3

4 mm

16777216 bit

FLASH

8

2

1

8

2097152 words

2M

SYNCHRONOUS

90 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8

.6 mm

SPI

.00005 Amp

8 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.8 mm

DUAL

30

NOR TYPE

3 mm

HARDWARE/SOFTWARE

MTFC4GACAJCN-4MIT by Micron Technology

MTFC4GACAJCN-4MIT

Micron Technology

MTFC4GACAJCN-4MIT by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368 bit density. Operating at -40 to 85 °C, it has a clock frequency of 52 MHz and supports parallel interface. Ideal for industrial applications requiring high-speed data storage in compact devices.

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC8GAKAJCN-4MIT by Micron Technology

MTFC8GAKAJCN-4MIT

Micron Technology

MTFC8GAKAJCN-4MIT by Micron Technology is a 8GX8 MLC NAND flash memory with 52 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and has a memory density of 68719476736 bit. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MT25QL512ABB8E12-1SIT by Micron Technology

MT25QL512ABB8E12-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24;

133 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

RC28F640P30BF65A by Micron Technology

RC28F640P30BF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

65 ns

BOTTOM

YES

YES

NO

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

LE25S81AFDTWG by Onsemi

LE25S81AFDTWG

Onsemi

LE25S81AFDTWG by Onsemi is a 1MX8 Flash Memory with 70 MHz clock frequency, operating at -40 to 90 °C. It has a small outline, very thin profile package and uses CMOS technology for industrial applications.

70 MHz

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

8

3

1

8

1048576 words

1M

SYNCHRONOUS

90 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

VSOP

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

1.8

.85 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

N25Q256A81ESF40G by Micron Technology

N25Q256A81ESF40G

Micron Technology

Micron Technology's N25Q256A81ESF40G is a 256Mbit flash memory with synchronous operation, 108MHz clock frequency, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in compact devices due to its small outline package and wide operating temperature range from -40°C to 85°C.

108 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

1

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

7.5 mm

SST26WF040B-104I/SN by Microchip Technology

SST26WF040B-104I/SN

Microchip Technology

SST26WF040B-104I/SN by Microchip: NOR Flash Memory, 4Mx1 organization, SPI serial bus type. Operating at 104MHz with 1.8V programming voltage. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26WF080B-104I/MF by Microchip Technology

SST26WF080B-104I/MF

Microchip Technology

SST26WF080B-104I/MF by Microchip: 8MX1 NOR Flash Memory with 104 MHz clock, SPI interface. Operating at -40 to 85 °C, it offers 100K cycles endurance for industrial applications. Features include 8388608 bit density, 1.65-1.95 V supply voltage, and 0.8 mm seated height in a small outline package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

PC28F00AG18AE by Micron Technology

PC28F00AG18AE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8;

96 ns

NO

YES

NO

R-PBGA-B64

e1

10 mm

1073741824 bit

FLASH

16

1

512

64

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

1.8

1.8

Not Qualified

AEC-Q100

1.2 mm

128K

.000185 Amp

Flash Memories

55 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

MT28EW128ABA1HPC-1SIT by Micron Technology

MT28EW128ABA1HPC-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

8

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

11 mm

MT28EW128ABA1HPN-0SIT by Micron Technology

MT28EW128ABA1HPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

70 ns

8

R-PBGA-B56

e1

9 mm

134217728 bit

FLASH

16

1

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NOR TYPE

7 mm

MT28EW128ABA1LPN-0SIT by Micron Technology

MT28EW128ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

8

R-PBGA-B56

e1

9 mm

134217728 bit

FLASH

16

1

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NOR TYPE

7 mm

MT28EW256ABA1HPC-1SIT by Micron Technology

MT28EW256ABA1HPC-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28EW256ABA1HPN-0SIT by Micron Technology

MT28EW256ABA1HPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOR TYPE

7 mm

MT28EW256ABA1LPC-1SIT by Micron Technology

MT28EW256ABA1LPC-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28EW256ABA1LPN-0SIT by Micron Technology

MT28EW256ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1HPN-0SIT by Micron Technology

MT28EW512ABA1HPN-0SIT

Micron Technology

MT28EW512ABA1HPN-0SIT by Micron Technology is a 32MX16 flash memory IC with 33554432 words. It operates at 3V, has a very thin profile, and offers a max access time of 95ns. Ideal for industrial applications requiring high-density parallel memory solutions.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1LPN-0SIT by Micron Technology

MT28EW512ABA1LPN-0SIT

Micron Technology

Micron Technology's MT28EW512ABA1LPN-0SIT is a Flash Memory with 32MX16 organization, 8-bit width, and 33554432 words. Operating at -40 to 85 °C, it has a very thin profile package style suitable for industrial applications requiring fast access times of up to 95 ns.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7 mm

MT29F2G08ABAEAH4-AATX:E by Micron Technology

MT29F2G08ABAEAH4-AATX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 256M;

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABAEAWP-AATX:E by Micron Technology

MT29F2G08ABAEAWP-AATX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-AATX:E is a 256MX8 SLC NAND flash memory with 2K sectors. Operating at 3.3V, it offers fast access time of 25ns and industrial temperature grade. With a package style of GRID ARRAY, it is suitable for applications requiring high-speed data storage in harsh environments.

25 ns

YES

NO

R-PBGA-B63

e3

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

TSSOP48,.8,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

AEC-Q100

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

SST26WF064C-104I/MF by Microchip Technology

SST26WF064C-104I/MF

Microchip Technology

SST26WF064C-104I/MF by Microchip Technology is a 64MX1 NOR flash memory with 104 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and fast data transfer in a compact package.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000015 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF064C-104I/SM by Microchip Technology

SST26WF064C-104I/SM

Microchip Technology

SST26WF064C-104I/SM by Microchip: NOR Flash Memory, 64MX1 organization, 104 MHz clock frequency. Ideal for industrial applications requiring high-speed synchronous operation and 100000 write/erase cycles.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

67108864 bit

FLASH

1

1

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

TS 16949

2.03 mm

SPI

.000015 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

RC28F128P30BF65A by Micron Technology

RC28F128P30BF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 13 mm;

65 ns

BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PBGA-B64

13 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

NOT SPECIFIED

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NOR TYPE

10 mm

MTFDDAK060MBD-2AH12ITYY by Micron Technology

MTFDDAK060MBD-2AH12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Memory Width: 8; No. of Functions: 1;

R-XSMA-N22

100.45 mm

515396075520 bit

FLASH MODULE

8

1

22

128849018880 words

60G

ASYNCHRONOUS

85 Cel

-40 Cel

60GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MTFDDAK120MBD-2AK12ITYY by Micron Technology

MTFDDAK120MBD-2AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Width: 69.85 mm; Minimum Operating Temperature: -40 Cel;

R-XSMA-N22

100.45 mm

1030792151040 bit

FLASH MODULE

8

1

22

128849018880 words

120G

ASYNCHRONOUS

85 Cel

-40 Cel

120GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm

MTFDDAK128MBD-1AK12ITYY by Micron Technology

MTFDDAK128MBD-1AK12ITYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Shape: RECTANGULAR; Type: MLC NAND TYPE; Surface Mount: NO;

R-XSMA-N22

100.45 mm

1099511627776 bit

FLASH MODULE

8

1

22

137438953472 words

128G

ASYNCHRONOUS

85 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

7.2 mm

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

MLC NAND TYPE

69.85 mm