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LE25S161PCTXG

Onsemi

LE25S161PCTXG by Onsemi

LE25S161PCTXG by Onsemi is a 2MX8 NOR Flash Memory with 70MHz clock frequency, SPI serial bus type. Operating at -40 to 90 °C, it has 100K write/erase cycles and 1.65-1.95V supply voltage range. Ideal for industrial applications requiring high endurance and fast data access in compact designs.

Median Price

$0.700

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Future Electronics

Canada . 2,000 parts In-Stock

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$0.700

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Flip Electronics

USA . 116,000 parts In-Stock

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Vyrian

USA . 8,146 parts In-Stock

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.982

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Digiode

USA . 136 parts In-Stock

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Corohmni

South Africa . 334 parts In-Stock

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AZTECH Wire

Italy . 1,221 parts In-Stock

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Kepictronics

USA . 88,698 parts In-Stock

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SupplyDigital Components

Austria . 6,829 parts In-Stock

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Problanco Electronics

Mexico . 5,550 parts In-Stock

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Kulean Microsystems

USA . 3,628 parts In-Stock

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Microchip USA

USA . 2,867 parts In-Stock

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TANS Electronics

Latvia . 2,280 parts In-Stock

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Corphita

USA . 1,743 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Futuretech Components

Singapore . 838 parts In-Stock

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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Overview

Upgrade your devices with the LE25S161PCTXG by Onsemi, a top-of-the-line flash memory that guarantees superior quality and reliability. Manufactured by the trusted brand Onsemi, this flash memory offers endless possibilities for applications in various industries. With its advanced features and innovative technology, this product provides exceptional value, benefits, and advantages to customers looking for high-performance storage solutions. Take your projects to the next level with the LE25S161PCTXG and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the flash memory, making it a good choice for long-term use.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation in various electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster and more efficient data transfer, making this flash memory ideal for high-performance applications.

Nominal Supply Voltage: 1.8V

The low nominal supply voltage makes the flash memory energy-efficient and suitable for battery-powered devices.

Memory Density: 16777216 bit

With a high memory density, this flash memory can store a large amount of data in a compact form, making it versatile for various storage needs.

Technical Specifications

Flash Memory LE25S161PCTXG attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

70 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Maximum Seated Height:

.6 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

8 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

3 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25S161PCTXG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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