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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F1G08ABBDAH4:D by Micron Technology

MT29F1G08ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G08ABBDAHC-IT:D by Micron Technology

MT29F1G08ABBDAHC-IT:D

Micron Technology

MT29F1G08ABBDAHC-IT:D by Micron Technology is a 128MX8 SLC NAND flash memory with 1.8V supply, operating from -40 to 85 °C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

e1

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G08ABBDAHC:D by Micron Technology

MT29F1G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAH4-IT:D by Micron Technology

MT29F1G16ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAH4:D by Micron Technology

MT29F1G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F1G16ABBDAHC-IT:D by Micron Technology

MT29F1G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT29F1G16ABBDAHC:D by Micron Technology

MT29F1G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

1073741824 bit

FLASH

16

1

1K

63

67108864 words

64M

ASYNCHRONOUS

70 Cel

0 Cel

64MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

IS25LQ010B-JNLE by Integrated Silicon Solution

IS25LQ010B-JNLE

Integrated Silicon Solution

IS25LQ010B-JNLE by Integrated Silicon Solution is a 1Mx1 Flash Memory IC with 1048576-bit memory density. It operates at a max clock frequency of 104MHz and supports synchronous operation. This small outline package with dual terminals is ideal for industrial applications requiring reliable, high-speed data storage.

104 MHz

R-PDSO-G8

e3

4.9 mm

1048576 bit

FLASH

1

1

8

1048576 words

1M

SYNCHRONOUS

105 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

IS25LQ020B-JBLE by Integrated Silicon Solution

IS25LQ020B-JBLE

Integrated Silicon Solution

IS25LQ020B-JBLE by Integrated Silicon Solution is a 2Mx1 Flash Memory IC with 2097152-bit memory density. Operating at 3V, it supports synchronous mode up to 104MHz clock frequency. Ideal for industrial applications, this small outline package offers serial interface and wide temperature range from -40°C to 105°C.

104 MHz

S-PDSO-G8

5.28 mm

2097152 bit

FLASH

1

1

8

2097152 words

2M

SYNCHRONOUS

105 Cel

-40 Cel

2MX1

PLASTIC/EPOXY

SOP

SQUARE

SMALL OUTLINE

SERIAL

3

2.16 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

5.28 mm

IS25LQ025B-JNLE by Integrated Silicon Solution

IS25LQ025B-JNLE

Integrated Silicon Solution

IS25LQ025B-JNLE by Integrated Silicon Solution is a 256Kx1 Flash Memory with synchronous operation at up to 104MHz. It operates b/w -40°C to 105°C, with a supply voltage range of 2.3V to 3.6V. Ideal for industrial applications requiring high-speed and reliable non-volatile memory storage in compact designs.

104 MHz

R-PDSO-G8

e3

4.9 mm

262144 bit

FLASH

1

1

8

262144 words

256K

SYNCHRONOUS

105 Cel

-40 Cel

256KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

IS25LQ040B-JKLE by Integrated Silicon Solution

IS25LQ040B-JKLE

Integrated Silicon Solution

IS25LQ040B-JKLE by Integrated Silicon Solution is a 4Mbit Flash Memory with synchronous operation at up to 104MHz. It operates b/w -40°C to 105°C, ideal for industrial applications. This small outline package with 8 terminals and serial interface offers high memory density of 4194304 bits for various embedded systems.

104 MHz

R-PDSO-N8

6 mm

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

IS25LQ040B-JNLE by Integrated Silicon Solution

IS25LQ040B-JNLE

Integrated Silicon Solution

IS25LQ040B-JNLE by Integrated Silicon Solution is a 4Mx1 Flash Memory with 104MHz clock frequency, operating at -40 to 105°C. It has a supply voltage range of 2.3V to 3.6V and is ideal for industrial applications requiring high-speed synchronous operation in a small outline package.

104 MHz

R-PDSO-G8

e3

4.9 mm

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

MT29F2G01AAAEDH4-ITX:E by Micron Technology

MT29F2G01AAAEDH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B63;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

W29N01GVSIAA by Winbond Electronics

W29N01GVSIAA

Winbond Electronics

W29N01GVSIAA by Winbond Electronics is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals, and compact dimensions of 12mm width and 18.4mm length. Ideal for applications requiring high-density memory storage in harsh environments.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F1G08ABBEAH4-AITX:E by Micron Technology

MT29F1G08ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABBEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 1.8V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications due to its very thin profile and fine pitch grid array package style.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABAEAH4-AITX:E by Micron Technology

MT29F1G08ABAEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G08ABAEAH4-AITX:E is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel programming with 0.8mm terminal pitch. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F1G16ABBEAH4-AITX:E by Micron Technology

MT29F1G16ABBEAH4-AITX:E

Micron Technology

Micron Technology's MT29F1G16ABBEAH4-AITX:E is a 64MX16 SLC NAND flash memory with 1073741824-bit density. Operating at 1.8V, it features a very thin profile package style and industrial temperature grade suitability. Ideal for applications requiring high-speed parallel data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

16

1

63

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G01AAAEDH4-IT:E by Micron Technology

MT29F2G01AAAEDH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

50 MHz

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

1

1

63

2147483648 words

2G

SYNCHRONOUS

85 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2.7

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MTFC4GMDEA-1MWT by Micron Technology

MTFC4GMDEA-1MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC16GJDEC-2MWT by Micron Technology

MTFC16GJDEC-2MWT

Micron Technology

Micron Technology's MTFC16GJDEC-2MWT is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a voltage range of 2.7V to 3.6V and operates in parallel mode. With a compact size of 14mm x 18mm, it is suitable for applications requiring high-speed data storage and retrieval in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B169

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC32GJDED-3MWT by Micron Technology

MTFC32GJDED-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

52 MHz

NO

NO

R-PBGA-B169

18 mm

274877906944 bit

FLASH CARD

8

1

169

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC4GLDEA-0MWT by Micron Technology

MTFC4GLDEA-0MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC64GJDDN-3MWT by Micron Technology

MTFC64GJDDN-3MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

NO

NO

R-PBGA-B169

18 mm

549755813888 bit

FLASH CARD

8

1

169

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3.3

1.4 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

14 mm

MTFC8GLDEA-1MWT by Micron Technology

MTFC8GLDEA-1MWT

Micron Technology

MTFC8GLDEA-1MWT by Micron Technology is a 3.3V MLC NAND Flash Memory with 8GX8 organization, operating at up to 52 MHz clock frequency. It features a very thin profile, fine pitch grid array package and is suitable for applications requiring high memory density and parallel operation in devices with limited space constraints.

52 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MX25L25645GM2I-10G by Macronix

MX25L25645GM2I-10G

Macronix

Macronix MX25L25645GM2I-10G is a 256Mb NOR Flash Memory with 120MHz clock frequency, SPI serial bus type. It operates at -40 to 85°C, has 100K write/erase cycles endurance, and uses hardware/software write protection. Ideal for industrial applications requiring high-speed data storage in compact devices.

120 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

5.28 mm

268435456 bit

FLASH

8

3

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3

2.16 mm

SPI

.00002 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

5.23 mm

HARDWARE/SOFTWARE

MX25L25645GZ2I-10G by Macronix

MX25L25645GZ2I-10G

Macronix

Macronix MX25L25645GZ2I-10G is a 32MX8 NOR flash memory with 120 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 100K write/erase cycles endurance, and uses hardware/software write protection. Ideal for industrial applications requiring high-speed data storage in compact devices.

120 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

e3

8 mm

268435456 bit

FLASH

8

3

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

UNSPECIFIED

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.00002 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25L6433FMI-08G by Macronix

MX25L6433FMI-08G

Macronix

Macronix's MX25L6433FMI-08G is a 64Mb NOR Flash Memory with SPI interface, operating at 133MHz. It offers 100K Write/Erase cycles and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring high endurance and reliable data storage in compact designs.

ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT

2

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

67108864 bit

FLASH

4

3

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.65 mm

SPI

.00002 Amp

17 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

NOR TYPE

7.52 mm

HARDWARE/SOFTWARE

MX25L6433FXCI-08G by Macronix

MX25L6433FXCI-08G

Macronix

Macronix MX25L6433FXCI-08G is a 64Mb NOR Flash Memory with SPI interface, operating at 133MHz. It offers 100K Write/Erase cycles, -40 to 85°C temp range, and hardware/software write protection. Ideal for industrial applications requiring high endurance and reliable data storage in compact form factor.

ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT

2

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

67108864 bit

FLASH

4

3

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

SPI

.00002 Amp

17 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

SST39SF010A-70-4C-WHE-T by Microchip Technology

SST39SF010A-70-4C-WHE-T

Microchip Technology

SST39SF010A-70-4C-WHE-T by Microchip is a NOR flash memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles, 70ns access time, and supports asynchronous mode. Ideal for applications requiring fast data access and reliable non-volatile storage in commercial temperature environments.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

MT29F1G08ABBEAH4-IT:E by Micron Technology

MT29F1G08ABBEAH4-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm

IS25LP064A-JMLE by Integrated Silicon Solution

IS25LP064A-JMLE

Integrated Silicon Solution

IS25LP064A-JMLE by Integrated Silicon Solution is a 64MX1 NOR flash memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring high-speed data storage in compact form factor.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

67108864 bit

FLASH

1

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.65 mm

SPI

.000035 Amp

25 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

10

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

MX25R6435FBDIL0 by Macronix

MX25R6435FBDIL0

Macronix

Macronix's MX25R6435FBDIL0 is a 16MX4 flash memory with 16777216 words and 67108864 bit memory density. Operating at 1.8V, it supports synchronous mode up to 33 MHz clock frequency for industrial applications. With a very thin profile and fine pitch grid array package, it offers reliable performance in various electronic devices.

ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT

2

33 MHz

R-PBGA-B22

e1

67108864 bit

FLASH

4

3

1

22

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

3

.52 mm

3.6 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

MX25R8035FBDIL0 by Macronix

MX25R8035FBDIL0

Macronix

Macronix's MX25R8035FBDIL0 is a 8-terminal, 1.8V synchronous flash memory with 2Mx4 organization and 104MHz clock frequency. Ideal for industrial applications, it offers a memory density of 8388608 bits in a very thin profile grid array package.

IT IS ALSO CONFIGURED AS 8M X 1

2

104 MHz

R-PBGA-B8

8388608 bit

FLASH

4

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX4

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8

.52 mm

3.6 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

NOT SPECIFIED

MX60LF8G18AC-TI by Macronix

MX60LF8G18AC-TI

Macronix

Macronix's MX60LF8G18AC-TI is a 3V SLC NAND flash memory with 1GX8 organization, operating from -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and industrial temperature grade suitable for various embedded applications.

R-PDSO-G48

e3

18.4 mm

8589934592 bit

FLASH

8

3

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

W25Q80EWZPIG by Winbond Electronics

W25Q80EWZPIG

Winbond Electronics

W25Q80EWZPIG by Winbond Electronics is a NOR type flash memory with 8MX1 organization, operating at 104 MHz. It has a small outline package style and is suitable for industrial applications requiring high endurance with 100000 write/erase cycles. The memory density is 8388608 bits, making it ideal for devices needing reliable data storage in harsh environments.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

8388608 bit

FLASH

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.8

Not Qualified

.8 mm

SPI

.0000075 Amp

Flash Memories

20 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

W25Q64JVTCIQ by Winbond Electronics

W25Q64JVTCIQ

Winbond Electronics

Winbond Electronics' W25Q64JVTCIQ is a 3.3V NOR Flash Memory with 8MX8 organization, operating at up to 133MHz clock frequency. Ideal for industrial applications, it offers 100000 Write/Erase cycles, SPI serial bus type, and a memory density of 67108864 bits.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

1.2 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q64JVZPIQ by Winbond Electronics

W25Q64JVZPIQ

Winbond Electronics

Winbond Electronics' W25Q64JVZPIQ is a 3.3V NOR flash memory with 8Mx8 organization, SPI serial bus type, and 133MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K write/erase cycles, it offers a compact package style with small outline and very thin profile for space-constrained designs.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.8 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MT29F2G08ABBEAHC:E by Micron Technology

MT29F2G08ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

10.5 mm

MT28EW01GABA1HJS-0AAT by Micron Technology

MT28EW01GABA1HJS-0AAT

Micron Technology

Micron Technology's MT28EW01GABA1HJS-0AAT is a 64MX16 NOR flash memory with 1073741824 bit density. Operating at -40 to 105 °C, it has a max access time of 105 ns and uses a programming voltage of 3V. Ideal for industrial applications, this flash memory features a small outline package with dual terminals and gull wing form factor.

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW01GABA1HPC-0AAT by Micron Technology

MT28EW01GABA1HPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

105 ns

R-PBGA-B64

13 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

11 mm

MT28EW01GABA1LJS-0AAT by Micron Technology

MT28EW01GABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Width: 14 mm;

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW01GABA1LPC-0AAT by Micron Technology

MT28EW01GABA1LPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

105 ns

R-PBGA-B64

13 mm

1073741824 bit

FLASH

16

1

64

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

MT28EW512ABA1HJS-0AAT by Micron Technology

MT28EW512ABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

105 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28EW512ABA1HPC-0AAT by Micron Technology

MT28EW512ABA1HPC-0AAT

Micron Technology

MT28EW512ABA1HPC-0AAT by Micron Technology is a 32MX16 FLASH Memory IC with 536870912 bit memory density. Operating at 105 ns access time, it has a supply voltage range of 2.7V to 3.6V and supports asynchronous mode. Ideal for industrial applications requiring high-speed data storage in compact form factors.

105 ns

8

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28EW512ABA1LJS-0AAT by Micron Technology

MT28EW512ABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

105 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28EW512ABA1LPC-0AAT by Micron Technology

MT28EW512ABA1LPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 13 mm;

105 ns

8

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm

MT28FW512ABA1HJS-0AAT by Micron Technology

MT28FW512ABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

105 ns

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28FW512ABA1HPC-0AAT by Micron Technology

MT28FW512ABA1HPC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, LOW PROFILE;

105 ns

R-PBGA-B64

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

11 mm