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MT28EW01GABA1HJS-0AAT

Micron Technology

MT28EW01GABA1HJS-0AAT by Micron Technology

Micron Technology's MT28EW01GABA1HJS-0AAT is a 64MX16 NOR flash memory with 1073741824 bit density. Operating at -40 to 105 °C, it has a max access time of 105 ns and uses a programming voltage of 3V. Ideal for industrial applications, this flash memory features a small outline package with dual terminals and gull wing form factor.

Median Price

$31.660

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 190 parts In-Stock

1+ parts

$20.240

100+ parts

$17.110

1k+ parts

$16.670

10k+ parts

-

190

$20.240

$17.110

$16.670

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Element14

Singapore . 367 parts In-Stock

1+ parts

$30.070

100+ parts

$26.920

1k+ parts

-

10k+ parts

-

367

$30.070

$26.920

-

-

Farnell

UK . 367 parts In-Stock

1+ parts

$31.660

100+ parts

-

1k+ parts

-

10k+ parts

-

367

$31.660

-

-

-

DigiKey

USA . 286 parts In-Stock

1+ parts

$36.060

100+ parts

$30.707

1k+ parts

$29.684

10k+ parts

-

286

$36.060

$30.707

$29.684

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Newark

USA . 367 parts In-Stock

1+ parts

$56.220

100+ parts

-

1k+ parts

-

10k+ parts

-

367

$56.220

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,241 parts In-Stock

1+ parts

$19.998

100+ parts

-

1k+ parts

-

10k+ parts

-

1,241

$19.998

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-

-

Chip Stock

USA . 22,200 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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22,200

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-

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Vyrian

USA . 5,992 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,992

-

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 249 parts In-Stock

1+ parts

$13.980

100+ parts

-

1k+ parts

-

10k+ parts

-

249

$13.980

-

-

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Corphita

USA . 2,090 parts In-Stock

1+ parts

$18.945

100+ parts

-

1k+ parts

-

10k+ parts

-

2,090

$18.945

-

-

-

Perfect Parts

USA . 1,290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,290

-

-

-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

-

-

-

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Computer Components Inc. - USA

USA . 565 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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565

-

-

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-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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500

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Overview

Experience the unmatched quality and innovation of Micron Technology with the MT28EW01GABA1HJS-0AAT Flash Memory. This versatile product offers a wide range of applications in various industries, delivering reliable performance and exceptional efficiency. With a focus on value and cutting-edge technology, Micron ensures that customers receive the best-in-class solutions for their memory needs. Trust Micron to provide top-tier products that exceed expectations and enhance your technological capabilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides protection to the internal components of the flash memory.

Surface Mount: YES

Easy to install on circuit boards, saving space and allowing for efficient assembly.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of individual memory cells, improving speed and efficiency.

Nominal Supply Voltage / Vsup (V): 3

Standard voltage requirement for compatibility with most devices and systems.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, making it suitable for industrial applications.

Memory Density: 1073741824 bit

High memory density allows for storing large amounts of data in a compact form.

Maximum Access Time: 105 ns

Quick access time ensures fast data retrieval, improving overall performance.

Technical Specifications

Flash Memory MT28EW01GABA1HJS-0AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

105 ns

JESD-30 Code:

R-PDSO-G56

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

56

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

MT28EW01GABA1HJS-0AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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