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IS25LQ040B-JKLE

Integrated Silicon Solution

IS25LQ040B-JKLE by Integrated Silicon Solution

IS25LQ040B-JKLE by Integrated Silicon Solution is a 4Mbit Flash Memory with synchronous operation at up to 104MHz. It operates b/w -40°C to 105°C, ideal for industrial applications. This small outline package with 8 terminals and serial interface offers high memory density of 4194304 bits for various embedded systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Vyrian

USA . 324 parts In-Stock

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324

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Corohmni

South Africa . 895 parts In-Stock

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$2.969

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895

$2.969

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Aztec Data Supply Inc.

USA . 1,991 parts In-Stock

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$5.420

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AZTECH Wire

Italy . 356 parts In-Stock

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$6.579

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Lixinc

USA . 7,256 parts In-Stock

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Kepictronics

USA . 4,950 parts In-Stock

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Continental Prestige Electronics

USA . 4,494 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,567 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Elevate your electronics with the IS25LQ040B-JKLE Flash Memory by Integrated Silicon Solution. Designed with precision and reliability in mind, this product boasts top-notch quality and performance. Ideal for a wide range of applications, this flash memory offers unparalleled value and benefits to customers seeking seamless data storage solutions. Experience enhanced efficiency and productivity with the IS25LQ040B-JKLE, backed by a trusted manufacturer known for pushing boundaries in technology. Upgrade your devices today and elevate your experience with this cutting-edge flash memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability, making it suitable for various applications.

Surface Mount: YES

Surface mount design allows for easy installation and efficient use of PCB space.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data integrity and reliable performance.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level of 3V, making it compatible with a wide range of systems.

Maximum Operating Temperature: 105 °C

Can withstand high operating temperatures, making it suitable for industrial applications.

Memory Density: 4194304 bit

High memory density allows for storing large amounts of data in a compact form factor.

Technology: CMOS

CMOS technology ensures low power consumption and high speed performance.

Parallel or Serial: SERIAL

Serial communication allows for efficient data transfer and integration with other devices.

Technical Specifications

Flash Memory IS25LQ040B-JKLE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

IS25LQ040B-JKLE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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