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MTFC16GJDEC-2MWT

Micron Technology

MTFC16GJDEC-2MWT by Micron Technology

Micron Technology's MTFC16GJDEC-2MWT is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a voltage range of 2.7V to 3.6V and operates in parallel mode. With a compact size of 14mm x 18mm, it is suitable for applications requiring high-speed data storage and retrieval in devices like smartphones and tablets.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 10,800 parts In-Stock

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10,800

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Vyrian

USA . 6,163 parts In-Stock

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6,163

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Digiode

USA . 132 parts In-Stock

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132

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Prism Electronics

USA . 6 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 139 parts In-Stock

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$5.084

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139

$5.084

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AZTECH Wire

Italy . 579 parts In-Stock

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$10.570

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579

$10.570

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Ampacity Inc.

Singapore . 814 parts In-Stock

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$20.000

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814

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Argo Parts USA

USA . 2,747 parts In-Stock

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Perfect Parts

USA . 1,098 parts In-Stock

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Continental Prestige Electronics

USA . 848 parts In-Stock

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848

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Corphita

USA . 564 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 246 parts In-Stock

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Overview

Unleash the power of Micron Technology with the MTFC16GJDEC-2MWT Flash Memory. Designed to provide exceptional performance and reliability, this product is perfect for a wide range of applications. With a state-of-the-art design and top-notch quality, customers can trust in the value and benefits that this product offers. Experience seamless operation and enhanced efficiency with Micron Technology's cutting-edge technology. Elevate your projects with the MTFC16GJDEC-2MWT and discover a new level of performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this flash memory lightweight and durable, perfect for portable devices.

Surface Mount: YES

This flash memory can easily be mounted on a circuit board, simplifying the installation process and saving space.

Package Shape: RECTANGULAR

The rectangular shape of this flash memory allows for efficient use of space on a circuit board.

Operating Mode: SYNCHRONOUS

The synchronous operation of this flash memory ensures fast and reliable data transfer, making it ideal for high-performance applications.

Nominal Supply Voltage (Vsup): 3.3V

The 3.3V supply voltage provides a stable power source for this flash memory, ensuring consistent performance.

No. of Terminals: 169

The 169 terminals of this flash memory allow for easy connection to other components, enhancing its versatility.

Package Style: GRID ARRAY

The grid array package style of this flash memory provides a compact and space-saving design, making it suitable for small devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand harsh environmental conditions.

Organization: 16GX8

The 16GX8 organization of this flash memory provides a high storage capacity and fast data access, making it suitable for storing large files.

Minimum Operating Temperature: -25 °C

The -25°C minimum operating temperature ensures that this flash memory can function reliably in cold environments.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish of this flash memory provides excellent conductivity and corrosion resistance, prolonging its lifespan.

Terminal Position: BOTTOM

The bottom terminal position of this flash memory allows for easy and secure mounting on a circuit board.

Maximum Seated Height: 0.8 mm

With a maximum seated height of 0.8mm, this flash memory has a low profile design, making it suitable for slim devices.

Maximum Clock Frequency (fCLK): 52 MHz

The 52 MHz maximum clock frequency of this flash memory allows for fast data transfer speeds, enhancing overall performance.

Width: 14 mm

The 14mm width of this flash memory ensures a compact form factor, making it suitable for space-constrained applications.

Minimum Supply Voltage (Vsup): 2.7 V

The 2.7V minimum supply voltage ensures that this flash memory can operate efficiently even with low power sources.

Type: MLC NAND TYPE

Being MLC NAND type, this flash memory offers a good balance between cost and performance, making it a cost-effective choice.

Length: 18 mm

With an 18mm length, this flash memory is compact and space-saving, suitable for devices with limited space.

Programming Voltage (V): 3.3

The 3.3V programming voltage of this flash memory ensures reliable and consistent data programming for optimal performance.

Technology: CMOS

The CMOS technology used in this flash memory makes it energy efficient and reliable, extending battery life in portable devices.

Parallel or Serial: PARALLEL

The parallel operation of this flash memory allows for simultaneous data transfer, improving overall efficiency.

Terminal Form: BALL

The ball terminal form of this flash memory offers a reliable and secure connection to a circuit board, ensuring stable performance.

No. of Words: 17179869184 words

With a high number of words, this flash memory can store a vast amount of data, making it suitable for applications with large storage requirements.

Memory Width: 8

The 8-bit memory width of this flash memory allows for efficient data processing and retrieval, enhancing overall performance.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch of this flash memory provides a compact design, saving space on a circuit board.

No. of Words Code: 16G

The 16G words code of this flash memory indicates a high storage capacity, making it suitable for demanding data storage applications.

Maximum Supply Voltage (Vsup): 3.6 V

The 3.6V maximum supply voltage ensures that this flash memory can handle high voltage inputs without damage.

Memory Density: 137438953472 bit

With a high memory density, this flash memory can store a large amount of data in a compact form factor, ideal for space-constrained devices.

Memory IC Type: FLASH CARD

As a flash card memory IC type, this product offers fast data access, high storage capacity, and reliable performance, making it a versatile choice for various applications.

Technical Specifications

Flash Memory MTFC16GJDEC-2MWT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B169

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

169

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA169,14X28,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

14 mm

Trade Compliance

MTFC16GJDEC-2MWT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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