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MTFC8GLDEA-1MWT

Micron Technology

MTFC8GLDEA-1MWT by Micron Technology

MTFC8GLDEA-1MWT by Micron Technology is a 3.3V MLC NAND Flash Memory with 8GX8 organization, operating at up to 52 MHz clock frequency. It features a very thin profile, fine pitch grid array package and is suitable for applications requiring high memory density and parallel operation in devices with limited space constraints.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 10,900 parts In-Stock

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10,900

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Vyrian

USA . 7,388 parts In-Stock

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7,388

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Digiode

USA . 653 parts In-Stock

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653

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Bristol Electronics

USA . 23 parts In-Stock

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23

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 382 parts In-Stock

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$12.765

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382

$12.765

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Ampacity Inc.

Singapore . 422 parts In-Stock

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$22.000

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$22.000

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Corohmni

South Africa . 350 parts In-Stock

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$25.472

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350

$25.472

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Semicontronic

India . 241 parts In-Stock

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$27.000

100+ parts

$26.325

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$26.190

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241

$27.000

$26.325

$26.190

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Perfect Parts

USA . 21,697 parts In-Stock

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21,697

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Corphita

USA . 2,435 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,295 parts In-Stock

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Argo Parts USA

USA . 2,030 parts In-Stock

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XScomponents

USA . 1,500 parts In-Stock

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Assy Fe

Spain . 1,220 parts In-Stock

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Continental Prestige Electronics

USA . 1,106 parts In-Stock

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Microchip USA

USA . 292 parts In-Stock

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Kepictronics

USA . 140 parts In-Stock

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140

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience lightning-fast data storage and retrieval with the MTFC8GLDEA-1MWT by Micron Technology. As a leading manufacturer in the industry, Micron Technology ensures top-notch quality and reliability for all their products. This flash memory device is perfect for a wide range of applications, offering high-speed performance and efficient data management. Upgrade your system with the MTFC8GLDEA-1MWT and enjoy seamless operation, increased productivity, and unparalleled convenience. Unlock the full potential of your devices today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory components, ensuring longevity and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for high-speed data transfer, enhancing overall performance.

Nominal Supply Voltage / Vsup: 3.3V

Optimal supply voltage for efficient and stable operation of the flash memory.

Maximum Operating Temperature: 85 °C

Ability to operate in high temperature environments without degradation in performance.

Organization: 8GX8

8GX8 organization indicates a high capacity and efficient data storage structure.

Technology: CMOS

CMOS technology ensures low power consumption and high integration, making the flash memory energy efficient.

Memory IC Type: FLASH CARD

Flash card memory IC type is commonly used for portable storage due to its compact size and fast data access.

Technical Specifications

Flash Memory MTFC8GLDEA-1MWT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER NICKEL

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GLDEA-1MWT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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