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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT25QU01GBBB8E12-0AUTTR by Micron Technology

MT25QU01GBBB8E12-0AUTTR

Micron Technology

FLASH; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e1; Programming Voltage (V): 1.8; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;

e1

FLASH

260

1.8

TIN SILVER COPPER

30

MT25QU02GCBB8E12-0AUTTR by Micron Technology

MT25QU02GCBB8E12-0AUTTR

Micron Technology

FLASH; Maximum Time At Peak Reflow Temperature (s): 30; Programming Voltage (V): 1.8; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;

e1

FLASH

260

1.8

TIN SILVER COPPER

30

MT25QU256ABA8E12-0AUTTR by Micron Technology

MT25QU256ABA8E12-0AUTTR

Micron Technology

MT25QU256ABA8E12-0AUTTR by Micron Technology is a 32MX8 NOR flash memory with 166 MHz clock frequency, suitable for SPI serial applications. Operating at 1.8V, it offers 100000 Write/Erase cycles and has a compact size of 6mm x 8mm, making it ideal for automotive electronics and IoT devices.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT25QU256ABA8ESF-0AATTR by Micron Technology

MT25QU256ABA8ESF-0AATTR

Micron Technology

FLASH; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Minimum Operating Temperature: -40 Cel;

166 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

AEC-Q100

2.65 mm

SPI

.00012 Amp

35 mA

2 V

1.7 V

1.8

YES

CMOS

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

MT28EW256ABA1HPN-0SITTR by Micron Technology

MT28EW256ABA1HPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 9 mm; Nominal Supply Voltage / Vsup (V): 3;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

MT28EW256ABA1LPN-0SITTR by Micron Technology

MT28EW256ABA1LPN-0SITTR

Micron Technology

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 7 mm; Maximum Standby Current: .000135 Amp;

70 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

256

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16

PARALLEL

NOT SPECIFIED

3

YES

1 mm

128K

.000135 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

YES

NOR TYPE

7 mm

.00006 ms

MT29F1G01AAADDH4-ITX:DTR by Micron Technology

MT29F1G01AAADDH4-ITX:DTR

Micron Technology

FLASH; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e1; Programming Voltage (V): 2.7;

e1

FLASH

260

2.7

Tin/Silver/Copper (Sn/Ag/Cu)

30

MT35XL01GBBA1G12-0AATTR by Micron Technology

MT35XL01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Serial Bus Type: SPI;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA1G12-0SITTR by Micron Technology

MT35XL01GBBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0AATTR by Micron Technology

MT35XL01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE; Maximum Seated Height: 1.2 mm;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0SITTR by Micron Technology

MT35XL01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Maximum Operating Temperature: 85 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA1G12-0SITTR by Micron Technology

MT35XL02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA2G12-0SITTR by Micron Technology

MT35XL02GCBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; Write Protection: HARDWARE;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA1G12-0AATTR by Micron Technology

MT35XL256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA2G12-0AATTR by Micron Technology

MT35XL256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0AATTR by Micron Technology

MT35XL512ABA1G12-0AATTR

Micron Technology

MT35XL512ABA1G12-0AATTR by Micron Technology is a 64MX8 NOR type flash memory with a density of 536870912 bits. It operates at a voltage range of 2.7V to 3.6V and has a max clock frequency of 133 MHz. This flash memory is commonly used in automotive applications due to its AEC-Q100 screening level and high endurance of 100000 write/erase cycles.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0SITTR by Micron Technology

MT35XL512ABA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Minimum Operating Temperature: -40 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0AATTR by Micron Technology

MT35XL512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words; Surface Mount: YES;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0SITTR by Micron Technology

MT35XL512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Operating Mode: SYNCHRONOUS;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AATTR by Micron Technology

MT35XU01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AUTTR by Micron Technology

MT35XU01GBBA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0SITTR by Micron Technology

MT35XU01GBBA1G12-0SITTR

Micron Technology

MT35XU01GBBA1G12-0SITTR by Micron Technology is a 128MX8 NOR flash memory with 1.8V supply voltage, operating at up to 200MHz clock frequency. It features hardware write protection and offers 100000 write/erase cycles. Ideal for SPI serial applications requiring high endurance and fast data access in a compact GRID ARRAY package.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AATTR by Micron Technology

MT35XU01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Technology: CMOS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AUTTR by Micron Technology

MT35XU01GBBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Package Equivalence Code: BGA24,5X5,40;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0SITTR by Micron Technology

MT35XU01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AATTR by Micron Technology

MT35XU02GCBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Terminal Pitch: 1 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AUTTR by Micron Technology

MT35XU02GCBA1G12-0AUTTR

Micron Technology

Micron Technology's MT35XU02GCBA1G12-0AUTTR is a 256MX8 NOR flash memory with 200 MHz clock frequency, 1.8V programming voltage, and 100K write/erase cycles. It operates in serial mode via SPI bus, suitable for automotive applications due to AEC-Q100 screening and -40 to 125°C temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0SITTR by Micron Technology

MT35XU02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Operating Temperature: 85 Cel;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AATTR by Micron Technology

MT35XU02GCBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AUTTR by Micron Technology

MT35XU02GCBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20; Operating Mode: SYNCHRONOUS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0SITTR by Micron Technology

MT35XU02GCBA2G12-0SITTR

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0SITTR is a 256MX8 NOR type flash memory with a memory density of 2Gb. It operates at a max clock frequency of 200MHz and has a min data retention time of 20 years. This flash memory is commonly used in applications that require high-speed, non-volatile storage such as automotive, industrial, and consumer electronics.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AATTR by Micron Technology

MT35XU256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Minimum Supply Voltage (Vsup): 1.7 V;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AUTTR by Micron Technology

MT35XU256ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V; Package Body Material: PLASTIC/EPOXY;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AATTR by Micron Technology

MT35XU256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Endurance: 100000 Write/Erase Cycles;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AUTTR by Micron Technology

MT35XU256ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Screening Level: AEC-Q100;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AATTR by Micron Technology

MT35XU512ABA1G12-0AATTR

Micron Technology

Micron Technology's MT35XU512ABA1G12-0AATTR is a 64MX8 NOR flash memory with 67108864 words. Operating at 200 MHz, it has a supply voltage range of 1.7V to 2V and endurance of 100000 cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40°C to 105°C operating temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AUTTR by Micron Technology

MT35XU512ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0AATTR by Micron Technology

MT35XU512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Width: 6 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0AUTTR by Micron Technology

MT35XU512ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; Surface Mount: YES;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0SITTR by Micron Technology

MT35XU512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Package Equivalence Code: BGA24,5X5,40;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

IS25WP512M-RHLE-TR by Integrated Silicon Solution

IS25WP512M-RHLE-TR

Integrated Silicon Solution

FLASH; Programming Voltage (V): 1.8; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

FLASH

NOT SPECIFIED

1.8

NOT SPECIFIED

MT25QL02GCBB8E12-0AATTR by Micron Technology

MT25QL02GCBB8E12-0AATTR

Micron Technology

FLASH; JESD-609 Code: e1; Maximum Time At Peak Reflow Temperature (s): 30; Programming Voltage (V): 3; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;

e1

FLASH

260

3

TIN SILVER COPPER

30

MTFC32GAPALBH-IT by Micron Technology

MTFC32GAPALBH-IT

Micron Technology

Micron Technology's MTFC32GAPALBH-IT is a 32GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications. With a wide temperature range (-40 to 85°C) and high memory density (274877906944 bit), it is ideal for demanding environments requiring fast data storage and retrieval.

200 MHz

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

IS22TF32G-JCLA2 by Integrated Silicon Solution

IS22TF32G-JCLA2

Integrated Silicon Solution

IS22TF32G-JCLA2 by Integrated Silicon Solution is a 32GX8 TLC NAND flash memory with 3.3V programming voltage, 200 MHz clock frequency, and 105°C max operating temp. Ideal for applications requiring high-speed data storage in automotive electronics due to AEC-Q100 screening level and compact grid array package design.

200 MHz

R-PBGA-B153

13 mm

274877906944 bit

FLASH

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

3.3

AEC-Q100

1 mm

.00003 Amp

55 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

TLC NAND TYPE

11.5 mm

HARDWARE/SOFTWARE

IS25WP512M-RMLA3-TR by Integrated Silicon Solution

IS25WP512M-RMLA3-TR

Integrated Silicon Solution

FLASH; Programming Voltage (V): 1.8;

FLASH

1.8

MT29F8G08ABABAWP-ITX:B by Micron Technology

MT29F8G08ABABAWP-ITX:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.

NO

R-PDSO-G48

e3

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

RECTANGULAR

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

DUAL

NO

SLC NAND TYPE

MTFC8GAKAJCN-1MWT by Micron Technology

MTFC8GAKAJCN-1MWT

Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates at 3.3V, has a temperature range of -25 to 85 °C, and uses synchronous mode. Ideal for applications requiring high memory capacity in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-1MWT by Micron Technology

MTFC4GACAJCN-1MWT

Micron Technology

MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm