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MT25QU256ABA8E12-0AUTTR

Micron Technology

MT25QU256ABA8E12-0AUTTR by Micron Technology

MT25QU256ABA8E12-0AUTTR by Micron Technology is a 32MX8 NOR flash memory with 166 MHz clock frequency, suitable for SPI serial applications. Operating at 1.8V, it offers 100000 Write/Erase cycles and has a compact size of 6mm x 8mm, making it ideal for automotive electronics and IoT devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,900 parts In-Stock

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7,900

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Digiode

USA . 626 parts In-Stock

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626

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 319 parts In-Stock

1+ parts

$9.899

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319

$9.899

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Ampacity Inc.

Singapore . 1,371 parts In-Stock

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$16.000

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1,371

$16.000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,216 parts In-Stock

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26,216

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Continental Prestige Electronics

USA . 3,137 parts In-Stock

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3,137

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Argo Parts USA

USA . 498 parts In-Stock

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498

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Corphita

USA . 208 parts In-Stock

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208

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Unlock the power of reliable and high-performance flash memory with the MT25QU256ABA8E12-0AUTTR by Micron Technology. Crafted with precision and expertise, this product offers unparalleled quality and value to customers. Whether for automotive, industrial, or consumer electronics applications, this NOR type memory provides fast, synchronous operation and a wide operating temperature range. With its durable construction, advanced features like hardware/software write protection, and impressive endurance of 100,000 write/erase cycles, this flash memory ensures data integrity and longevity. Trust in Micron Technology to deliver top-notch memory solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice.

Surface Mount: YES

The surface mount design allows for easy installation and space-saving in electronic devices.

Screening Level: AEC-Q100

With AEC-Q100 screening, this flash memory is suitable for automotive applications, ensuring high quality and reliability.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient and easy integration into various electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures fast and efficient data transfer, making this flash memory ideal for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps minimize power consumption, making this flash memory energy-efficient.

No. of Terminals: 24

With 24 terminals, this flash memory offers a high level of connectivity and flexibility for different system configurations.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The grid array and thin profile design make this flash memory suitable for compact electronic devices with limited space.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in various environmental conditions.

Organization: 32MX8

The 32MX8 organization provides a large memory capacity and efficient data storage for demanding applications.

Technical Specifications

Flash Memory MT25QU256ABA8E12-0AUTTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

166 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00018 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QU256ABA8E12-0AUTTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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