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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F1G01ABBFDSF-IT:F by Micron Technology

MT29F1G01ABBFDSF-IT:F

Micron Technology

Micron Technology's MT29F1G01ABBFDSF-IT:F is a 128MX8 SLC NAND flash memory with 1.8V supply voltage, operating at up to 83MHz clock frequency. It offers 100000 write/erase cycles and uses SPI serial bus type, suitable for applications requiring high endurance and fast data transfer speeds.

83 MHz

10

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

1073741824 bit

FLASH

8

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.65 mm

SPI

.00005 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

GULL WING

1.27 mm

DUAL

SLC NAND TYPE

7.5 mm

HARDWARE/SOFTWARE

MT29F8G16ABBCAH4:C by Micron Technology

MT29F8G16ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAWP:C by Micron Technology

MT29F8G16ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F16G08ADBCAH4:C by Micron Technology

MT29F16G08ADBCAH4:C

Micron Technology

MT29F16G08ADBCAH4:C by Micron Technology is a 1.8V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates b/w 0-70°C, has a max standby current of 0.00005A, and is suitable for commercial applications requiring fast access times and low power consumption.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABACAH4:C by Micron Technology

MT29F8G08ABACAH4:C

Micron Technology

Micron Technology's MT29F8G08ABACAH4:C is a 3.3V SLC NAND flash memory with 1GX8 organization, 4K page size, and 256K sector size. It operates in asynchronous mode with a max temperature of 70°C. Ideal for applications requiring high-speed data storage and retrieval in commercial-grade environments.

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

4K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F16G16ADBCAH4:C by Micron Technology

MT29F16G16ADBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADBCAH4-IT:C by Micron Technology

MT29F16G08ADBCAH4-IT:C

Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology is a Flash Memory with 2GX8 organization, 8K sectors, and 4K page size. It is used in industrial applications with a temperature range of -40 to 85 °C.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADACAH4:C by Micron Technology

MT29F16G08ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

256K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4-IT:C by Micron Technology

MT29F8G16ABACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABACAWP:C by Micron Technology

MT29F8G08ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 8;

YES

NO

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1.2 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F8G16ABBCAH4-IT:C by Micron Technology

MT29F8G16ABBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4-IT:C by Micron Technology

MT29F16G16ADACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words Code: 1G;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4:C by Micron Technology

MT29F16G16ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA63,10X12,32;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABBCAH4:C by Micron Technology

MT29F8G08ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 30 ns;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4:C by Micron Technology

MT29F8G16ABACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words: 536870912 words;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADBCAH4-IT:C by Micron Technology

MT29F16G16ADBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

30 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

16

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

MLC NAND TYPE

9 mm

MT29F8G08ABBCAH4-IT:C by Micron Technology

MT29F8G08ABBCAH4-IT:C

Micron Technology

MT29F8G08ABBCAH4-IT:C by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K sectors, and 256K sector size. It operates in industrial temperatures (-40 to 85 °C) with parallel interface and 0.8mm terminal pitch. Ideal for applications requiring high memory density and fast access times.

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAWP-IT:C by Micron Technology

MT29F8G16ABACAWP-IT:C

Micron Technology

MT29F8G16ABACAWP-IT:C by Micron Technology is a 512MX16 SLC NAND flash memory with 3.3V programming voltage. It has a 128K word sector size and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-density, fast access time, and low standby current.

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F8G08ABABAWP-AATX:B by Micron Technology

MT29F8G08ABABAWP-AATX:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

NOT SPECIFIED

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

SLC NAND TYPE

12 mm

MTFC8GACAENS-AAT by Micron Technology

MTFC8GACAENS-AAT

Micron Technology

FLASH CARD; Terminal Finish: GOLD OVER NICKEL; Programming Voltage (V): 2.7; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

e4

FLASH CARD

260

2.7

GOLD OVER NICKEL

30

MTFC16GAKAEEF-AAT by Micron Technology

MTFC16GAKAEEF-AAT

Micron Technology

MTFC16GAKAEEF-AAT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at 52 MHz, it has a thin profile grid array package suitable for industrial applications. With a temperature range of -40 to 105 °C, it offers fast parallel data transfer and low power consumption.

52 MHz

NO

NO

R-PBGA-B169

e4

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GOLD OVER NICKEL

BALL

.5 mm

BOTTOM

NO

NAND TYPE

14 mm

MTFC64GAJAEDN-AIT by Micron Technology

MTFC64GAJAEDN-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

52 MHz

NO

NO

R-PBGA-B169

18 mm

549755813888 bit

FLASH CARD

8

1

169

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

NAND TYPE

14 mm

MTFC16GAKAEEF-AIT by Micron Technology

MTFC16GAKAEEF-AIT

Micron Technology

FLASH CARD; Terminal Finish: GOLD OVER NICKEL; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Programming Voltage (V): 2.7;

e4

FLASH CARD

260

2.7

GOLD OVER NICKEL

30

MTFC16GAKAEDQ-AAT by Micron Technology

MTFC16GAKAEDQ-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Data Polling: NO;

52 MHz

NO

NO

R-PBGA-B100

e4

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Gold (Au) - with Nickel (Ni) barrier

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

MTFC8GACAEDQ-AAT by Micron Technology

MTFC8GACAEDQ-AAT

Micron Technology

FLASH CARD; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: GOLD OVER NICKEL; JESD-609 Code: e4; Programming Voltage (V): 2.7;

e4

FLASH CARD

260

2.7

GOLD OVER NICKEL

30

MTFC64GAJAEDQ-AIT by Micron Technology

MTFC64GAJAEDQ-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

52 MHz

NO

NO

R-PBGA-B100

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

LBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

YES

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NO

NAND TYPE

14 mm

MTFC64GAJAEDQ-AAT by Micron Technology

MTFC64GAJAEDQ-AAT

Micron Technology

FLASH CARD; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Terminal Finish: GOLD OVER NICKEL; Programming Voltage (V): 2.7; Maximum Time At Peak Reflow Temperature (s): 30;

e4

FLASH CARD

260

2.7

GOLD OVER NICKEL

30

MTFC4GLGDQ-AITZ by Micron Technology

MTFC4GLGDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Alternate Memory Width: 4;

4

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

14 mm

MT29F16G08ABABAWP-AIT:B by Micron Technology

MT29F16G08ABABAWP-AIT:B

Micron Technology

Micron Technology's MT29F16G08ABABAWP-AIT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, offering 4K page size and 100000 write/erase cycles endurance. Suitable for industrial applications, it operates in asynchronous mode with a temperature range of -40 to 85 °C.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

3

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

SLC NAND TYPE

12 mm

MT29F16G08ABCBBH1-12AIT:B by Micron Technology

MT29F16G08ABCBBH1-12AIT:B

Micron Technology

Micron Technology's MT29F16G08ABCBBH1-12AIT:B is a 2GX8 SLC NAND flash memory with 4K page size and 512K sector size. Operating at 3.3V, it offers industrial-grade endurance of 100k cycles. Suitable for applications requiring high-density, reliable storage solutions in industrial environments.

83MHZ CLOCK FREQUENCY IS AVAILABLE

YES

NO

10

100000 Write/Erase Cycles

R-PBGA-B100

18 mm

17179869184 bit

FLASH

8

1

4K

100

2147483648 words

2G

ASYNCHRONOUS/SYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

4K

PARALLEL

NOT SPECIFIED

3.3

YES

1 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

MT29F64G08CBABBWP-12IT:B by Micron Technology

MT29F64G08CBABBWP-12IT:B

Micron Technology

FLASH; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Programming Voltage (V): 3.3; JESD-609 Code: e3; Type: MLC NAND TYPE;

e3

FLASH

260

3.3

TIN

30

MLC NAND TYPE

MT29F1G08ABAFAH4-ITE:F by Micron Technology

MT29F1G08ABAFAH4-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-speed data storage in compact devices.

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

9 mm

MT29F1G08ABAFAWP-ITE:F by Micron Technology

MT29F1G08ABAFAWP-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAWP-ITE:F is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals in small outline package, and offers high memory density of 1073741824 bits. Ideal for applications requiring fast and reliable non-volatile storage solutions.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MTFC8GLWDM-3LAATZ by Micron Technology

MTFC8GLWDM-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11.5 mm

MTFC8GLWDQ-3LAATZ by Micron Technology

MTFC8GLWDQ-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GACAALT-4MIT by Micron Technology

MTFC4GACAALT-4MIT

Micron Technology

MTFC4GACAALT-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4294967296 words, operating at 52 MHz clock frequency. It features a thin profile grid array package and is suitable for applications requiring high-speed data storage in devices like smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

34359738368 bit

FLASH

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MTFC8GACAALT-4MIT by Micron Technology

MTFC8GACAALT-4MIT

Micron Technology

MTFC8GACAALT-4MIT by Micron Technology is a 100-terminal, 3.3V flash memory with 8GX8 organization and 52 MHz clock frequency. It operates in synchronous mode, suitable for applications requiring high-speed data storage and retrieval in a compact GRID ARRAY package.

52 MHz

NO

NO

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

MLC NAND TYPE

14 mm

MX30LF1G18AC-TI by Macronix

MX30LF1G18AC-TI

Macronix

Macronix's MX30LF1G18AC-TI is a 3V SLC NAND flash memory with 128Kx8 organization. Operating in industrial temperature range (-40 to 85°C), it offers parallel interface, 131072 words capacity, and 0.5mm terminal pitch. Ideal for applications requiring high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

1048576 bit

FLASH

8

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MX25L12845GM2I-10G by Macronix

MX25L12845GM2I-10G

Macronix

Macronix MX25L12845GM2I-10G is a 128Mb Flash Memory with synchronous operation, 104MHz clock frequency, and 32Mx4 organization. It is ideal for industrial applications requiring high memory density and serial interface communication.

ALSO CONFIGURABLE AS 128M X 1

2

104 MHz

R-PDSO-G8

e3

5.28 mm

134217728 bit

FLASH

4

3

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

3

2.16 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.23 mm

LE25S20FD-AH by Onsemi

LE25S20FD-AH

Onsemi

LE25S20FD-AH by Onsemi is a 256Kx8 NOR type Flash Memory with SPI serial bus, operating at 40MHz. It has a supply voltage of 1.65V to 1.95V and endurance of 100k cycles. Ideal for industrial applications requiring low power consumption and high-speed data transfer in compact designs.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

2097152 bit

FLASH

8

3

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

VSOP

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

1.8

1.8

Not Qualified

.85 mm

SPI

.00001 Amp

Flash Memories

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

LE25S20MB-AH by Onsemi

LE25S20MB-AH

Onsemi

LE25S20MB-AH by Onsemi is a 256KX8 NOR Flash Memory with 40 MHz clock frequency, SPI serial bus type, and 1.8V programming voltage. Ideal for industrial applications requiring high endurance of 100000 Write/Erase cycles in a compact small outline package.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2097152 bit

FLASH

8

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

1.8

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

LE25U20AFD-AH by Onsemi

LE25U20AFD-AH

Onsemi

LE25U20AFD-AH by Onsemi is a 256Kx8 NOR type flash memory with a small outline, very thin profile package. It operates at a voltage of 2.5V and has a max clock frequency of 30MHz. This memory IC is commonly used in industrial applications requiring high endurance and reliable data storage.

30 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

2097152 bit

FLASH

8

3

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

VSOP

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

2.5/3.3

3

Not Qualified

.85 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

JS28F00AP30EFA by Micron Technology

JS28F00AP30EFA

Micron Technology

Micron Technology's JS28F00AP30EFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous mode, 1K sectors, and a page size of 16 words. Ideal for industrial applications requiring fast access times and high memory density.

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30EFA by Micron Technology

JS28F512P30EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

512

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30TFA by Micron Technology

JS28F512P30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

110 ns

TOP BOOT

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

4,511

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

PC28F512P30TFA by Micron Technology

PC28F512P30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B64;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

PC28F512P30TFB by Micron Technology

PC28F512P30TFB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

100 ns

TOP BOOT

TOP

YES

YES

NO

R-PBGA-B64

e1

10 mm

536870912 bit

FLASH

16

1

4,511

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MT29F1G08ABADAH4-IT:D by Micron Technology

MT29F1G08ABADAH4-IT:D

Micron Technology

MT29F1G08ABADAH4-IT:D by Micron Technology is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PBGA-B63

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm