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LE25S20MB-AH

Onsemi

LE25S20MB-AH by Onsemi

LE25S20MB-AH by Onsemi is a 256KX8 NOR Flash Memory with 40 MHz clock frequency, SPI serial bus type, and 1.8V programming voltage. Ideal for industrial applications requiring high endurance of 100000 Write/Erase cycles in a compact small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,793 parts In-Stock

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Digiode

USA . 606 parts In-Stock

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606

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AZTECH Wire

Italy . 1,218 parts In-Stock

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$12.910

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SupplyDigital Components

Austria . 7,307 parts In-Stock

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TANS Electronics

Latvia . 5,239 parts In-Stock

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Kulean Microsystems

USA . 3,283 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Microchip USA

USA . 1,647 parts In-Stock

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Corphita

USA . 1,248 parts In-Stock

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Problanco Electronics

Mexico . 896 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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Overview

Unlock the power of reliable and efficient data storage with the LE25S20MB-AH by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Flash Memory products like this one, perfect for a wide range of applications. With its compact design and advanced technology, this product provides customers with unmatched value, benefits, and advantages. Trust Onsemi to bring you cutting-edge solutions that meet your needs and exceed your expectations. Elevate your projects with the LE25S20MB-AH - the ultimate choice for seamless data management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight, durable, and cost-effective.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and better performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V helps in reducing power consumption and increasing efficiency.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection options ensures data security and prevents accidental data loss.

Maximum Clock Frequency (fCLK): 40 MHz

High clock frequency of 40 MHz allows for faster read/write operations and overall better performance.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making the product reliable and energy-efficient.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100,000 write/erase cycles, the product offers long-term reliability and durability.

Technical Specifications

Flash Memory LE25S20MB-AH attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

40 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25S20MB-AH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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