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MT29F1G08ABADAH4-IT:D

Micron Technology

MT29F1G08ABADAH4-IT:D by Micron Technology

MT29F1G08ABADAH4-IT:D by Micron Technology is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85°C. It features a 2K word page size, 128K word sector size, and parallel interface. Ideal for industrial applications requiring fast access times and low standby current.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 19,500 parts In-Stock

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19,500

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Digiode

USA . 2,297 parts In-Stock

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2,297

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Vyrian

USA . 2,071 parts In-Stock

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2,071

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Nova Conductors

Japan . 92 parts In-Stock

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92

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ComSIT Distribution GmbH

Germany . 30 parts In-Stock

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30

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ComSIT USA

USA . 30 parts In-Stock

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30

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Cyclops Electronics Ltd

UK . 2 parts In-Stock

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2

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Distributors (Availability)

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Corohmni

South Africa . 941 parts In-Stock

1+ parts

$2.700

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941

$2.700

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Aztec Data Supply Inc.

USA . 205 parts In-Stock

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$2.850

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205

$2.850

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Semicontronic

India . 605 parts In-Stock

1+ parts

$6.000

100+ parts

$5.850

1k+ parts

$5.820

10k+ parts

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605

$6.000

$5.850

$5.820

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AZTECH Wire

Italy . 865 parts In-Stock

1+ parts

$13.469

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865

$13.469

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S.R.D Solutions

India . 30,000 parts In-Stock

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Perfect Parts

USA . 19,023 parts In-Stock

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Continental Prestige Electronics

USA . 3,303 parts In-Stock

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Kepictronics

USA . 2,543 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,234 parts In-Stock

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Corphita

USA . 986 parts In-Stock

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986

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Argo Parts USA

USA . 187 parts In-Stock

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187

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Microchip USA

USA . 152 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 5 parts In-Stock

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Overview

Discover the cutting-edge technology of Micron Technology's MT29F1G08ABADAH4-IT:D Flash Memory, offering unparalleled quality and reliability. Ideal for a wide range of applications, this product provides value and benefits that exceed expectations. With a focus on innovation and performance, this memory solution is a game-changer in the industry, delivering superior results and efficiency. Trust Micron Technology for all your memory needs and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards, making installation efficient.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact design for space-saving installation in electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for fast and efficient data access and transfer.

Nominal Supply Voltage (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with a wide range of electronic devices.

Power Supplies (V): 3.3

The use of 3.3V power supplies ensures efficient power consumption for extended device usage.

No. of Terminals: 63

The 63 terminals provide ample connectivity options for seamless integration into various electronic systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style offers high-density mounting and efficient heat dissipation.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance in various environmental conditions.

Organization: 128MX8

The 128MX8 organization allows for efficient data storage and retrieval in a structured manner.

Technical Specifications

Flash Memory MT29F1G08ABADAH4-IT:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1K

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G08ABADAH4-IT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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