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Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.

Flash Memory

Available Parts 1,676

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
S25HS02GTDZBHM050 by Infineon Technologies

S25HS02GTDZBHM050

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B24; Programming Voltage (V): 1.8;

166 MHz

25

300000 Write/Erase Cycles

S-PBGA-B24

8 mm

2147483648 bit

FLASH

8

3

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

1.8

AEC-Q100

1.2 mm

SPI

.001 Amp

110 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS02GTDPBHV150 by Infineon Technologies

S25HS02GTDPBHV150

Infineon Technologies

S25HS02GTDPBHV150 by Infineon Technologies is a 256MX8 NOR type flash memory with a max clock frequency of 166 MHz. It operates in synchronous mode and has a min data retention time of 25 years. This flash memory is commonly used in applications such as consumer electronics, automotive systems, and industrial equipment.

166 MHz

25

300000 Write/Erase Cycles

S-PBGA-B24

8 mm

2147483648 bit

FLASH

8

3

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

SPI

.00045 Amp

110 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL02GTDPBHV150 by Infineon Technologies

S25HL02GTDPBHV150

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 2.7 V; Type: NOR TYPE;

133 MHz

25

2560000 Write/Erase Cycles

S-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

SPI

.000045 Amp

110 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HL02GTDZBHB053 by Infineon Technologies

S25HL02GTDZBHB053

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 2147483648 bit; Write Protection: HARDWARE;

166 MHz

25

300000 Write/Erase Cycles

S-PBGA-B24

8 mm

2147483648 bit

FLASH

8

3

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

3

AEC-Q100

1.2 mm

SPI

.000655 Amp

110 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS02GTDZBHB053 by Infineon Technologies

S25HS02GTDZBHB053

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Moisture Sensitivity Level (MSL): 3;

166 MHz

25

300000 Write/Erase Cycles

S-PBGA-B24

8 mm

2147483648 bit

FLASH

8

3

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

1.8

AEC-Q100

1.2 mm

SPI

.00045 Amp

110 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

W25Q128JVPIQTR by Winbond Electronics

W25Q128JVPIQTR

Winbond Electronics

Winbond Electronics' W25Q128JVPIQTR is a NOR flash memory with 16MX8 organization, SPI serial bus type, and 133 MHz clock frequency. It operates at -40 to 85 °C, has 100000 write/erase cycles endurance, and is suitable for applications requiring high-speed data storage in compact devices.

ALSO OPERATES AT 2.7 TO 3V @104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.2

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.8 mm

SPI

.00006 Amp

20 mA

3.6 V

3 V

3.3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

S29GL064S90BHI040 by Infineon Technologies

S29GL064S90BHI040

Infineon Technologies

FLASH; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; No. of Words Code: 4M;

90 ns

8

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B48

8.15 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3

YES

TS 16949

1 mm

64K

.0001 Amp

80 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6.15 mm

60 ms

HARDWARE/SOFTWARE

SFU3064GC2AE2TO-I-LF-1A1-STD by Swissbit Ag

SFU3064GC2AE2TO-I-LF-1A1-STD

Swissbit Ag

SFU3064GC2AE2TO-I-LF-1A1-STD by Swissbit Ag is a 64GX8 MLC NAND USB flash drive with 549755813888-bit memory density. Operating at 5V, it has a programming voltage of 5V and supports asynchronous mode. Ideal for applications requiring high memory capacity and reliable data storage in temperatures ranging from -40 to 85°C.

USB 3.1 FLASH DRIVE

10

R-XXMA-X

24 mm

549755813888 bit

USB FLASH DRIVE

8

1

68719476736 words

64G

ASYNCHRONOUS

85 Cel

-40 Cel

64GX8

UNSPECIFIED

XMA

RECTANGULAR

5

4.5 mm

160 mA

5.5 V

4.5 V

5

NO

CMOS

UNSPECIFIED

UNSPECIFIED

MLC NAND TYPE

12.1 mm

SFU3064GC2AE2TO-C-LF-1A1-STD by Swissbit Ag

SFU3064GC2AE2TO-C-LF-1A1-STD

Swissbit Ag

SFU3064GC2AE2TO-C-LF-1A1-STD by Swissbit Ag is a 64GX8 MLC NAND Flash Memory with 68719476736 words capacity. Operating at 5V, it has a CMOS technology and USB Flash Drive IC type. Ideal for applications requiring high memory density, such as data storage in devices with temperature range of 0 to 70°C.

USB 3.1 FLASH DRIVE

10

R-XXMA-X

24 mm

549755813888 bit

USB FLASH DRIVE

8

1

68719476736 words

64G

ASYNCHRONOUS

70 Cel

0 Cel

64GX8

UNSPECIFIED

XMA

RECTANGULAR

5

4.5 mm

160 mA

5.5 V

4.5 V

5

NO

CMOS

UNSPECIFIED

UNSPECIFIED

MLC NAND TYPE

12.1 mm

AT45DB321D-TU-SL383 by Dialog Semiconductor

AT45DB321D-TU-SL383

Dialog Semiconductor

FLASH; No. of Terminals: 28; Package Code: TSOP1; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Write Protection: HARDWARE/SOFTWARE;

66 MHz

20

100000 Write/Erase Cycles

R-PDSO-G28

11.8 mm

33554432 bit

FLASH

1

1

28

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

2.7

1.2 mm

SPI

.00005 Amp

17 mA

3.6 V

2.7 V

3

YES

CMOS

GULL WING

.55 mm

DUAL

NOR TYPE

8 mm

HARDWARE/SOFTWARE

AT45DB321D-SU-SL383 by Dialog Semiconductor

AT45DB321D-SU-SL383

Dialog Semiconductor

AT45DB321D-SU-SL383 by Dialog Semiconductor is a NOR type flash memory with 32MX1 organization and 33554432 bit memory density. It operates at a max clock frequency of 66 MHz and has a min data retention time of 20 years. This flash memory is commonly used in applications that require high-speed data storage and retrieval, such as embedded systems and consumer electronics.

66 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

5.29 mm

33554432 bit

FLASH

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.16 mm

SPI

.00005 Amp

17 mA

3.6 V

2.7 V

3

YES

CMOS

GULL WING

1.27 mm

DUAL

NOR TYPE

5.24 mm

HARDWARE/SOFTWARE

MTFC32GAZAQDW-AAT by Micron Technology

MTFC32GAZAQDW-AAT

Micron Technology

MTFC32GAZAQDW-AAT by Micron Technology is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. AEC-Q100 screening makes it suitable for automotive applications requiring high reliability in harsh environments. Its low profile grid array package and synchronous operation offer compact design and efficient data transfer for automotive electronics.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC32GAZAQDW-AATTR by Micron Technology

MTFC32GAZAQDW-AATTR

Micron Technology

Micron Technology's MTFC32GAZAQDW-AATTR is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications meeting AEC-Q100 standards, it offers high memory density of 274877906944 bits in a compact GRID ARRAY package style.

200 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3.3

AEC-Q100

1.5 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MT29F4G01ABAFD12-AUT:F by Micron Technology

MT29F4G01ABAFD12-AUT:F

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; Minimum Data Retention Time: 10;

CONFIGURABLE AS 4G X 1

2

133 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

4294967296 bit

FLASH

8

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3.3

AEC-Q100

1.2 mm

SPI

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MT29F4G01ABBFD12-AUT:F by Micron Technology

MT29F4G01ABBFD12-AUT:F

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Operating Mode: SYNCHRONOUS;

CONFIGURABLE AS 4G X 1

2

83 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

4294967296 bit

FLASH

8

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

AEC-Q100

1.2 mm

SPI

.0001 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

S25FL256SAGNFE001 by Infineon Technologies

S25FL256SAGNFE001

Infineon Technologies

FLASH; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Functions: 1; Write Protection: HARDWARE/SOFTWARE;

4

133 MHz

20

100 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-55 Cel

32MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.0003 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

THGAMVT0T43BAIR by Kioxia Holdings

THGAMVT0T43BAIR

Kioxia Holdings

Kioxia Holdings' THGAMVT0T43BAIR is a NAND flash memory with 128GX8 organization, operating at 52 MHz clock frequency. It features a package style of GRID ARRAY, very thin profile, and fine pitch. Suitable for applications requiring high-speed data storage in compact devices due to its synchronous operation and 1.8V programming voltage.

3.3V SUPPLY IS ALSO AVAILABLE

52 MHz

YES

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

.00104 Amp

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

S29GL064S90FHI020 by Infineon Technologies

S29GL064S90FHI020

Infineon Technologies

S29GL064S90FHI020 by Infineon Technologies is a 64Mb NOR Flash Memory with 4MX16 organization, operating at 3V. It features hardware/software write protection, asynchronous operation, and 100000 Write/Erase cycles endurance. Ideal for applications requiring fast access times and high data density in a compact package.

90 ns

8

YES

YES

YES

20

100000 Write/Erase Cycles

R-PBGA-B64

13 mm

67108864 bit

FLASH

16

1

128

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

8/16

PARALLEL

3

YES

1.4 mm

64K

.0002 Amp

60 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

60 ms

HARDWARE/SOFTWARE

TC58CVG2S0HRAIJ by Kioxia Holdings

TC58CVG2S0HRAIJ

Kioxia Holdings

Kioxia Holdings' TC58CVG2S0HRAIJ is a 512Kx8 NAND flash memory with synchronous operation at 133 MHz clock frequency. It features SPI serial bus, hardware write protection, and operates b/w -40 to 85 °C. Ideal for applications requiring high-speed data storage in compact devices.

133 MHz

R-XDSO-N8

8 mm

4294967296 bit

FLASH

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

UNSPECIFIED

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.8 mm

SPI

.00021 Amp

28 mA

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NAND TYPE

6 mm

HARDWARE

SFEM064GB1ED1TO-I-6F-111-STD by Swissbit Ag

SFEM064GB1ED1TO-I-6F-111-STD

Swissbit Ag

Swissbit Ag's SFEM064GB1ED1TO-I-6F-111-STD is a 64GX8 TLC NAND flash memory with 549755813888 bit density. Operating at 3.3V, it supports up to 200 MHz clock frequency and has a temperature range of -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory in compact form factors.

200 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFEM256GB1ED1TO-I-8H-111-STD by Swissbit Ag

SFEM256GB1ED1TO-I-8H-111-STD

Swissbit Ag

Swissbit Ag's SFEM256GB1ED1TO-I-8H-111-STD is a 256GX8 TLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85 °C. It features a grid array package style, synchronous operation mode, and supports up to 200 MHz clock frequency. Ideal for applications requiring high-density memory storage in compact devices.

200 MHz

R-PBGA-B153

13 mm

2199023255552 bit

FLASH CARD

8

1

153

274877906944 words

256G

SYNCHRONOUS

85 Cel

-40 Cel

256GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFEM128GB1ED1TO-I-7G-111-STD by Swissbit Ag

SFEM128GB1ED1TO-I-7G-111-STD

Swissbit Ag

Swissbit Ag's SFEM128GB1ED1TO-I-7G-111-STD is a 128GX8 TLC NAND flash memory with 3.3V programming voltage, operating at up to 200 MHz clock frequency. Suitable for applications requiring high memory density and fast data processing in a compact GRID ARRAY package.

200 MHz

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFSD064GN1AM1MT-I-ZK-21P-STD by Swissbit Ag

SFSD064GN1AM1MT-I-ZK-21P-STD

Swissbit Ag

FLASH CARD;

FLASH CARD

SFSD016GN1AM1MT-I-5E-21P-STD by Swissbit Ag

SFSD016GN1AM1MT-I-5E-21P-STD

Swissbit Ag

FLASH CARD;

FLASH CARD

SFSD032GN1AM1MT-E-6F-21P-STD by Swissbit Ag

SFSD032GN1AM1MT-E-6F-21P-STD

Swissbit Ag

FLASH CARD;

FLASH CARD

AT25EU0041A-SSHN-B by Renesas Electronics

AT25EU0041A-SSHN-B

Renesas Electronics

FLASH; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm; Programming Voltage (V): 3;

ALSO OPERATES WITH 1.65V MIN @ 80MHZ

108 MHz

20

10000 Write/Erase Cycles

R-PDSO-G8

4.925 mm

4194304 bit

FLASH

8

3

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3

1.75 mm

SPI

.000014 Amp

3 mA

3.6 V

2.3 V

3

YES

CMOS

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

S79FS01GSFABHB213 by Infineon Technologies

S79FS01GSFABHB213

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Programming Voltage (V): 1.8;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100; TS 16949

1.2 mm

SPI

.0006 Amp

200 mA

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE

S25FL256SAGNFE000 by Infineon Technologies

S25FL256SAGNFE000

Infineon Technologies

FLASH; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Endurance: 100 Write/Erase Cycles; JESD-30 Code: R-PDSO-N8;

4

133 MHz

20

100 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-55 Cel

32MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.0003 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

S25FL256SAGNFE003 by Infineon Technologies

S25FL256SAGNFE003

Infineon Technologies

FLASH; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-N8; Maximum Standby Current: .0003 Amp;

4

133 MHz

20

100 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

125 Cel

-55 Cel

32MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3

.8 mm

SPI

.0003 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

EM32FQYHY-BA000-2 by Delkin Devices

EM32FQYHY-BA000-2

Delkin Devices

Delkin Devices' EM32FQYHY-BA000-2 is a 32GX8 TLC NAND flash memory with 3.3V programming voltage and 85°C max temp. Ideal for hardware write protection, it features a compact rectangular package style with 153 terminals in a grid array layout for various applications requiring high-density memory storage.

NO

NO

R-PBGA-B156

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

TLC NAND TYPE

11.5 mm

HARDWARE

MTFDKCC960TFR-1BC1ZABYY by Micron Technology

MTFDKCC960TFR-1BC1ZABYY

Micron Technology

Micron Technology's MTFDKCC960TFR-1BC1ZABYY is a RECTANGULAR MICROELECTRONIC ASSEMBLY Flash Memory with 960GX8 organization, TLC NAND Type, and 8246337208320 bit memory density. It operates b/w 0 to 70 °C and contains 1030792151040 words. Ideal for high-density storage applications requiring reliable performance in various temperature conditions.

R-XXMA-X

8246337208320 bit

FLASH MODULE

8

1

1030792151040 words

960G

70 Cel

0 Cel

960GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

UNSPECIFIED

UNSPECIFIED

TLC NAND TYPE

MTSD128AHC6MS-1WTCS by Micron Technology

MTSD128AHC6MS-1WTCS

Micron Technology

FLASH CARD; No. of Terminals: 8; Package Code: DIE; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3; Minimum Supply Voltage (Vsup): 2.7 V;

208 MHz

R-XUUC-N8

15 mm

1099511627776 bit

FLASH CARD

8

1

8

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1.1 mm

SPI

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

TLC NAND TYPE

11 mm

MTSD064AHC6MS-1WTCS by Micron Technology

MTSD064AHC6MS-1WTCS

Micron Technology

FLASH CARD; No. of Terminals: 8; Package Code: DIE; Package Shape: RECTANGULAR; Technology: CMOS; Terminal Position: UPPER;

208 MHz

R-XUUC-N8

15 mm

549755813888 bit

FLASH CARD

8

1

8

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1.1 mm

SPI

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

TLC NAND TYPE

11 mm

MTSD032AHC6MS-1WTCS by Micron Technology

MTSD032AHC6MS-1WTCS

Micron Technology

MTSD032AHC6MS-1WTCS by Micron Technology is a 32GX8 TLC NAND flash memory chip with 208 MHz clock frequency. Operating at 3.3V, it offers 274877906944 bits memory density and uses SPI serial bus for applications requiring high-speed data storage in compact devices.

208 MHz

R-XUUC-N8

15 mm

274877906944 bit

FLASH CARD

8

1

8

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

3.3

1.1 mm

SPI

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

TLC NAND TYPE

11 mm

1624092 by Phoenix Contact

1624092

Phoenix Contact

Phoenix Contact 1624092 Flash Memory features NOR type technology, 17179869184-bit memory density, and 3.3V nominal voltage. Ideal for applications requiring high-speed data storage in a compact rectangular package with surface mount capability.

R-XUUC-N

17179869184 bit

CONFIGURATION MEMORY

8

1

2147483648 words

2G

85 Cel

-40 Cel

2GX8

UNSPECIFIED

DIE

DIE OR CHIP

RECTANGULAR

UNCASED CHIP

3.3

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

UPPER

NOR TYPE

MT29F2G01ABAGDSF-IT:G by Micron Technology

MT29F2G01ABAGDSF-IT:G

Micron Technology

FLASH; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Length: 10.3 mm; Organization: 256MX8;

133 MHz

10

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

2147483648 bit

FLASH

8

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3.3

2.65 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

1.27 mm

DUAL

SLC NAND TYPE

7.5 mm

HARDWARE/SOFTWARE

MT29F2G01ABAGD12-IT:G by Micron Technology

MT29F2G01ABAGD12-IT:G

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Maximum Clock Frequency (fCLK): 133 MHz;

133 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3.3

1.2 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MTFC4GMXEA-WT by Micron Technology

MTFC4GMXEA-WT

Micron Technology

MTFC4GMXEA-WT by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating at 52 MHz, it has a low profile of 0.8 mm and supports hardware write protection. Ideal for embedded MMC applications, this synchronous memory features a very thin grid array package with 153 terminals.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

Embedded MMC

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC32GLXDM-WT by Micron Technology

MTFC32GLXDM-WT

Micron Technology

MTFC32GLXDM-WT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at 52 MHz, it has a thin profile and fine pitch package style suitable for embedded MMC applications. With a voltage range of 1.65V to 1.95V, this CMOS technology chip offers hardware write protection and open-drain output characteristics.

52 MHz

R-PBGA-B153

13 mm

274877906944 bit

Embedded MMC

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

1.2 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC8GLXEA-WT by Micron Technology

MTFC8GLXEA-WT

Micron Technology

MTFC8GLXEA-WT by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 1.8V programming voltage. It is used in embedded MMC applications due to its 68719476736 bit memory density and synchronous operation mode.

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

Embedded MMC

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC2GMXEA-WT by Micron Technology

MTFC2GMXEA-WT

Micron Technology

MTFC2GMXEA-WT by Micron Technology is a NAND flash memory with 2GX8 organization, operating at 52 MHz clock frequency. It features a very thin profile package style and offers 17179869184 bit memory density. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

R-PBGA-B153

13 mm

17179869184 bit

Embedded MMC

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

70 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC16GLXDV-WT by Micron Technology

MTFC16GLXDV-WT

Micron Technology

Embedded MMC; No. of Terminals: 169; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 137438953472 bit; Maximum Supply Current: 80 mA;

52 MHz

R-PBGA-B169

16 mm

137438953472 bit

Embedded MMC

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

1 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

12 mm

HARDWARE

GD25Q16CNIGR by Gigadevice Semiconductor

GD25Q16CNIGR

Gigadevice Semiconductor

GD25Q16CNIGR by Gigadevice Semiconductor is a 2MX8 NOR Flash Memory with 120 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it has 100000 write/erase cycles endurance. Ideal for applications requiring fast data access and reliable storage in compact devices.

120 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

4 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

HVSON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.6 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

.8 mm

DUAL

NOR TYPE

3 mm

HARDWARE/SOFTWARE

GD25Q16CWIGR by Gigadevice Semiconductor

GD25Q16CWIGR

Gigadevice Semiconductor

GD25Q16CWIGR by Gigadevice Semiconductor is a 2MX8 NOR flash memory with 120 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C and has 100000 write/erase cycles endurance. Ideal for applications requiring high-speed data storage in compact devices.

120 MHz

20

100000 Write/Erase Cycles

R-XDSO-N8

6 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

HVSON

SOLCC8,.2

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3.3

.8 mm

SPI

.000005 Amp

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE