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MTFC32GAZAQDW-AATTR

Micron Technology

MTFC32GAZAQDW-AATTR by Micron Technology

Micron Technology's MTFC32GAZAQDW-AATTR is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications meeting AEC-Q100 standards, it offers high memory density of 274877906944 bits in a compact GRID ARRAY package style.

Median Price

$20.381

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 92 parts In-Stock

1+ parts

$17.867

100+ parts

-

1k+ parts

-

10k+ parts

-

92

$17.867

-

-

-

Digiode

USA . 2,240 parts In-Stock

1+ parts

$22.895

100+ parts

-

1k+ parts

-

10k+ parts

-

2,240

$22.895

-

-

-

Chip Stock

USA . 15,400 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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15,400

-

-

-

-

Vyrian

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,720

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 779 parts In-Stock

1+ parts

$14.631

100+ parts

-

1k+ parts

-

10k+ parts

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779

$14.631

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$17.867

100+ parts

-

1k+ parts

$16.974

10k+ parts

$16.616

50

$17.867

-

$16.974

$16.616

Ampacity Inc.

Singapore . 7 parts In-Stock

1+ parts

$20.480

100+ parts

-

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-

10k+ parts

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7

$20.480

-

-

-

Corphita

USA . 273 parts In-Stock

1+ parts

$21.690

100+ parts

-

1k+ parts

-

10k+ parts

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273

$21.690

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-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

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Argo Parts USA

USA . 2,531 parts In-Stock

1+ parts

-

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2,531

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Continental Prestige Electronics

USA . 1,402 parts In-Stock

1+ parts

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100+ parts

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1,402

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Overview

Unleash the power of cutting-edge technology with Micron Technology's MTFC32GAZAQDW-AATTR Flash Memory, a game-changer in storage solutions. Boasting top-tier quality and reliability, this product is designed for a wide range of applications, ensuring seamless performance in every use case. With a focus on innovation and efficiency, Micron Technology delivers unparalleled value to customers by providing faster data access, increased storage capacity, and improved overall system performance. Upgrade your devices with the MTFC32GAZAQDW-AATTR and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the flash memory, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 3.3

The low supply voltage requirement of 3.3V makes it energy-efficient and suitable for a variety of devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, this flash memory can withstand harsh environmental conditions.

Memory Density: 274877906944 bit

The high memory density allows for storing a large amount of data in a compact space, making it ideal for applications requiring high storage capacity.

Maximum Clock Frequency (fCLK): 200 MHz

The high maximum clock frequency of 200 MHz enables fast data transfer rates, suitable for high-performance applications.

Technical Specifications

Flash Memory MTFC32GAZAQDW-AATTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.5 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC32GAZAQDW-AATTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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