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TC58CVG2S0HRAIJ

Kioxia Holdings

TC58CVG2S0HRAIJ by Kioxia Holdings

Kioxia Holdings' TC58CVG2S0HRAIJ is a 512Kx8 NAND flash memory with synchronous operation at 133 MHz clock frequency. It features SPI serial bus, hardware write protection, and operates b/w -40 to 85 °C. Ideal for applications requiring high-speed data storage in compact devices.

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ARCO, INC.

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GLYN GmbH & Co. KG

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AZTECH Wire

Italy . 849 parts In-Stock

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Overview

Discover the TC58CVG2S0HRAIJ by Kioxia Holdings, a top-quality flash memory device designed to elevate your digital experience. With Kioxia's reputation for excellence in technology innovation, this product offers unmatched reliability and performance. Perfect for a wide range of applications, this flash memory provides fast and efficient data storage solutions. Unlock the potential of your devices with the TC58CVG2S0HRAIJ and enjoy seamless operation, enhanced functionality, and peace of mind knowing you have a reliable storage solution at your fingertips. Elevate your digital experience today with Kioxia!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy installation on circuit boards, making it ideal for compact devices.

Package Shape: RECTANGULAR

The rectangular shape offers a space-saving design, perfect for applications with limited space.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures fast and efficient data transfer, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides stable power for reliable operation in various electronic devices.

No. of Terminals: 8

With 8 terminals, this flash memory offers versatility in connection options for different systems.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug design with a thin profile offers efficient heat dissipation and space-saving benefits.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in demanding environments.

Organization: 512KX8

The 512KX8 organization allows for efficient data storage and retrieval in various applications.

Output Characteristics: 3-STATE

The 3-state output characteristics provide flexibility and compatibility with different system designs.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance in extreme cold conditions.

Terminal Position: DUAL

The dual terminal position enhances connectivity options and ease of installation.

Write Protection: HARDWARE

The hardware write protection feature ensures data security and integrity.

Maximum Seated Height: 0.8 mm

The slim 0.8mm seated height makes this flash memory suitable for compact devices with limited space.

Maximum Clock Frequency (fCLK): 133 MHz

The high clock frequency allows for fast data transfer speeds, enhancing system performance.

Width: 6 mm

The compact 6mm width makes this flash memory ideal for devices with space constraints.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage ensures efficient power consumption in various electronic applications.

Type: NAND TYPE

The NAND type design offers high storage capacity and reliable data retention.

Length: 8 mm

The short 8mm length makes this flash memory suitable for small devices and compact designs.

Programming Voltage (V): 3.3

The 3.3V programming voltage ensures accurate and efficient data programming.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity for reliable operation.

Parallel or Serial: SERIAL

The serial interface offers easy integration and communication with a wide range of devices.

Terminal Form: NO LEAD

The no lead terminal form simplifies installation and ensures a secure connection.

Maximum Supply Current: 28 mA

The low maximum supply current ensures efficient power usage and prolongs battery life in portable devices.

No. of Words: 524288 words

The high number of words capacity allows for extensive data storage and retrieval capabilities.

Memory Width: 8

The 8-bit memory width enables efficient data transfer and processing in various applications.

Terminal Pitch: 1.27 mm

The 1.27mm terminal pitch offers compatibility and ease of installation in standard PCB designs.

No. of Words Code: 512K

The 512K words code simplifies memory organization and data management in the system.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum 3.6V supply voltage provides headroom for power fluctuations and ensures reliable operation.

Serial Bus Type: SPI

The SPI serial bus type offers fast data transfer speeds and easy integration with microcontrollers.

Memory Density: 4294967296 bit

The high memory density provides ample storage capacity for large data files and applications.

Memory IC Type: FLASH

The flash memory IC type offers fast data access and high reliability for data storage applications.

Maximum Standby Current: 0.00021 Amp

The low maximum standby current ensures energy-efficient operation and prolongs battery life in standby mode.

Technical Specifications

Flash Memory TC58CVG2S0HRAIJ attributes and parameters. Explore more Flash Memory devices from Kioxia Holdings

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-XDSO-N8

Length:

8 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3.3

Maximum Seated Height:

.8 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00021 Amp

Maximum Supply Current:

28 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NAND TYPE

Width:

6 mm

Write Protection:

HARDWARE

Trade Compliance

TC58CVG2S0HRAIJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Kioxia Holdings

KIOXIA Group is one of the largest manufacturers of NAND flash memory. In 1987, KIOXIA invented the world’s first NAND flash memory not to require a power source (non-volatile memory). This technology is now being used in various fields ranging from digital devices such as smartphones to data centers and has become an indispensable core component of the information society. As IoT, AI and 5G technologies become more widespread, we will see an explosive increase in the volume of data generated around the world. Large-capacity, high-performance memory and devices, and high-speed data processing systems will be indispensable for the storage and use of that data. As a global leader in flash memory and SSDs, we will continue to deliver products and services that create new value for society.

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