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TC58FVM6B2ATG65

Toshiba

TC58FVM6B2ATG65 by Toshiba

Toshiba's TC58FVM6B2ATG65 is a NOR flash memory with 4MX16 organization, 8K/64K sector size, and 4194304 words capacity. Operating at -40 to 85 °C, it has a programming voltage of 2.7V and max access time of 75ns. Ideal for industrial applications requiring fast data polling and common flash interface support.

Median Price

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Lifecycle Status

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6

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Vyrian

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Prism Electronics

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Fibra_Brandt Electronic GMBH

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PC Components Company LLC

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Aztec Data Supply Inc.

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AZTECH Wire

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Ampacity Inc.

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Continental Prestige Electronics

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Metaverse IC Inc.

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Argo Parts USA

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Overview

Experience the unmatched quality and reliability of Toshiba with the TC58FVM6B2ATG65 Flash Memory. This cutting-edge product offers seamless integration, high performance, and versatility for a wide range of applications. Toshiba's reputation for excellence in technology ensures that this flash memory provides exceptional value and benefits to customers looking for top-notch storage solutions. Trust Toshiba to deliver innovation and superior performance with the TC58FVM6B2ATG65.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures a sturdy and long-lasting package for the flash memory, making it reliable for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and convenient integration onto circuit boards, simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V is common and compatible with many systems, ensuring easy integration with existing setups.

Technology: CMOS

CMOS technology offers low power consumption, making the flash memory energy-efficient and ideal for battery-operated devices.

Memory Density: 67108864 bit

With a high memory density, this flash memory can store a large amount of data, making it suitable for applications requiring extensive storage capacity.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range of 85°C ensures reliable performance even in harsh environmental conditions.

Technical Specifications

Flash Memory TC58FVM6B2ATG65 attributes and parameters. Explore more Flash Memory devices from Toshiba

Specs

Maximum Access Time:

75 ns

Additional Features:

IT ALSO OPERATES AT 2.7 TO 3.6 VOLT

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

8,127

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

TC58FVM6B2ATG65 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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