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TC58NVG0S3ETAI0

Toshiba

TC58NVG0S3ETAI0 by Toshiba

Toshiba's TC58NVG0S3ETAI0 Flash Memory features 128MX8 organization, 1073741824 bit memory density, and operates at a voltage of 3.3V. Ideal for industrial applications, this CMOS technology-based memory has a temperature range of -40 to 85 °C and is designed for serial data transfer with a gull wing terminal form.

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Quantum Digital Technology

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Nova Conductors

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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Velocity Electronics

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Ampacity Inc.

Singapore . 754 parts In-Stock

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RC Electronics

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Overview

Unlock endless possibilities with the TC58NVG0S3ETAI0 by Toshiba. Crafted with precision and expertise, this Flash Memory device offers unparalleled quality and reliability. Ideal for a wide range of applications, this product is designed to streamline your operations while maximizing efficiency. Experience seamless performance and unmatched value with Toshiba's cutting-edge technology. Elevate your projects with the TC58NVG0S3ETAI0 and stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the flash memory.

Surface Mount: YES

Being surface mountable makes the flash memory easy to integrate into various electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for efficient data transfer and processing.

Nominal Supply Voltage: 3.3V

Stable supply voltage of 3.3V ensures consistent performance of the flash memory.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature, this flash memory can withstand elevated environmental conditions.

Organization: 128MX8

The 128MX8 organization provides a high capacity memory structure suitable for storing large amounts of data.

Minimum Operating Temperature: -40°C

The flash memory remains functional even in very low temperature conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation for efficient data storage and retrieval.

Technical Specifications

Flash Memory TC58NVG0S3ETAI0 attributes and parameters. Explore more Flash Memory devices from Toshiba

Specs

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Programming Voltage (V):

3.3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Trade Compliance

TC58NVG0S3ETAI0 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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