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MTFC32GAZAQDW-AAT

Micron Technology

MTFC32GAZAQDW-AAT by Micron Technology

MTFC32GAZAQDW-AAT by Micron Technology is a 32GX8 NAND flash memory with 3.3V supply voltage, operating at up to 200MHz clock frequency. AEC-Q100 screening makes it suitable for automotive applications requiring high reliability in harsh environments. Its low profile grid array package and synchronous operation offer compact design and efficient data transfer for automotive electronics.

Median Price

$25.808

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 936 parts In-Stock

1+ parts

$23.420

100+ parts

$20.530

1k+ parts

$19.840

10k+ parts

-

936

$23.420

$20.530

$19.840

-

Farnell

UK . 708 parts In-Stock

1+ parts

$25.119

100+ parts

$20.285

1k+ parts

-

10k+ parts

-

708

$25.119

$20.285

-

-

Element14

Singapore . 708 parts In-Stock

1+ parts

$25.526

100+ parts

$20.157

1k+ parts

-

10k+ parts

-

708

$25.526

$20.157

-

-

Arrow

USA . 399 parts In-Stock

1+ parts

$26.090

100+ parts

-

1k+ parts

-

10k+ parts

-

399

$26.090

-

-

-

Verical

USA . 399 parts In-Stock

1+ parts

$26.090

100+ parts

-

1k+ parts

-

10k+ parts

-

399

$26.090

-

-

-

Newark

USA . 99 parts In-Stock

1+ parts

$33.640

100+ parts

$25.740

1k+ parts

$25.010

10k+ parts

-

99

$33.640

$25.740

$25.010

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 59 parts In-Stock

1+ parts

$19.080

100+ parts

-

1k+ parts

-

10k+ parts

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59

$19.080

-

-

-

Digiode

USA . 1,029 parts In-Stock

1+ parts

$23.142

100+ parts

-

1k+ parts

-

10k+ parts

-

1,029

$23.142

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-

-

Chip Stock

USA . 13,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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13,600

-

-

-

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Sensible Micro Corp

USA . 5,760 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,760

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-

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Vyrian

USA . 3,506 parts In-Stock

1+ parts

-

100+ parts

-

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3,506

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-

-

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Component Sense

UK . 877 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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877

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$19.080

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$19.080

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-

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Continental Prestige Electronics

USA . 756 parts In-Stock

1+ parts

$20.400

100+ parts

-

1k+ parts

-

10k+ parts

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756

$20.400

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-

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Ampacity Inc.

Singapore . 785 parts In-Stock

1+ parts

$20.610

100+ parts

-

1k+ parts

-

10k+ parts

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785

$20.610

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-

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Corphita

USA . 807 parts In-Stock

1+ parts

$21.924

100+ parts

-

1k+ parts

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10k+ parts

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807

$21.924

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Argo Parts USA

USA . 2,428 parts In-Stock

1+ parts

-

100+ parts

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2,428

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Authorized Procurement Solutions

USA . 880 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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880

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-

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Speed Components Ltd (Excess)

Israel . 266 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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266

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-

-

Overview

Experience the next level of reliability and performance with the MTFC32GAZAQDW-AAT by Micron Technology. As a leader in the industry, Micron Technology provides top-quality Flash Memory products designed to meet the highest standards. This innovative product offers customers unmatched value and benefits, making it an ideal choice for a wide range of applications. Trust Micron Technology to deliver cutting-edge technology that exceeds expectations, ensuring optimal performance and reliability every time. Elevate your projects with the MTFC32GAZAQDW-AAT and experience the difference Micron Technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body helps in reducing the overall weight of the product, making it easier to handle and transport.

Surface Mount: YES

The surface mount feature allows for easy installation on PCBs, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient and synchronized data transfer, making the flash memory highly reliable and fast.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures compatibility with a wide range of electronic devices, making it versatile for different applications.

Maximum Clock Frequency (fCLK): 200 MHz

With a high maximum clock frequency of 200 MHz, this flash memory can perform data operations at a faster rate, improving overall system performance.

Memory IC Type: FLASH CARD

Being a flash card type memory IC, it offers high storage capacity and faster data access, making it suitable for applications requiring large amounts of data storage.

Technical Specifications

Flash Memory MTFC32GAZAQDW-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Screening Level:

AEC-Q100

Maximum Seated Height:

1.5 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC32GAZAQDW-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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