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S29GL064S90FHI020

Infineon Technologies

S29GL064S90FHI020 by Infineon Technologies

S29GL064S90FHI020 by Infineon Technologies is a 64Mb NOR Flash Memory with 4MX16 organization, operating at 3V. It features hardware/software write protection, asynchronous operation, and 100000 Write/Erase cycles endurance. Ideal for applications requiring fast access times and high data density in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,842 parts In-Stock

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Digiode

USA . 540 parts In-Stock

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540

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Ampacity Inc.

Singapore . 1,534 parts In-Stock

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$13.000

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$13.000

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AZTECH Wire

Italy . 850 parts In-Stock

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$15.744

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850

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Semicontronic

India . 910 parts In-Stock

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$23.000

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$22.425

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$22.310

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910

$23.000

$22.425

$22.310

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QUARKTWIN TECHNOLOGY LTD

USA . 25,619 parts In-Stock

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Microchip USA

USA . 3,312 parts In-Stock

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Bastille Electronics

Australia . 1,055 parts In-Stock

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Corphita

USA . 591 parts In-Stock

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Continental Prestige Electronics

USA . 403 parts In-Stock

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Argo Parts USA

USA . 308 parts In-Stock

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Overview

Unlock the power of reliable and high-performance Flash Memory with the S29GL064S90FHI020 by Infineon Technologies. Infineon, a renowned manufacturer in the industry, brings you a top-quality product that is perfect for a wide range of applications. With its durable plastic/epoxy package body material and asynchronous operating mode, this flash memory offers exceptional value and benefits to customers. Experience fast access times, high endurance, and seamless user interface with this versatile product. Elevate your projects with the innovative technology and trusted quality of Infineon's Flash Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the flash memory components, making it suitable for various environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for faster data transfer and processing, enhancing the overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V offers compatibility with a wide range of devices and power sources, ensuring efficient power consumption.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand high heat conditions, making it suitable for industrial applications.

Write Protection: HARDWARE/SOFTWARE

The write protection feature, through both hardware and software means, provides security and prevents unauthorized modification of the stored data.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100,000 write/erase cycles ensures long-term reliability and longevity of the flash memory, making it a dependable storage solution.

Technical Specifications

Flash Memory S29GL064S90FHI020 attributes and parameters. Explore more Flash Memory devices from Infineon Technologies

Specs

Maximum Access Time:

90 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

128

No. of Terminals:

64

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Ready or Busy:

YES

Maximum Seated Height:

1.4 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0002 Amp

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11 mm

Maximum Write Cycle Time (tWC):

60 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

S29GL064S90FHI020 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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