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MTFC4GACAALT-4MIT

Micron Technology

MTFC4GACAALT-4MIT by Micron Technology

MTFC4GACAALT-4MIT by Micron Technology is a 3.3V MLC NAND flash memory with 4294967296 words, operating at 52 MHz clock frequency. It features a thin profile grid array package and is suitable for applications requiring high-speed data storage in devices like smartphones and tablets.

Median Price

$8.330

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$8.330

100+ parts

-

1k+ parts

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10k+ parts

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550

$8.330

-

-

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ComSIT Distribution GmbH

Germany . 22,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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22,800

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-

-

-

Chip Stock

USA . 10,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,500

-

-

-

-

Semtec, LLC

USA . 10,002 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10,002

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-

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Flip Electronics

USA . 5,700 parts In-Stock

1+ parts

-

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5,700

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-

-

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Vyrian

USA . 4,256 parts In-Stock

1+ parts

-

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4,256

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-

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Cyclops Electronics Ltd

UK . 3,090 parts In-Stock

1+ parts

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3,090

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-

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Martec Srl

Italy . 2,000 parts In-Stock

1+ parts

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2,000

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-

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Digiode

USA . 1,202 parts In-Stock

1+ parts

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1,202

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-

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Avant Electronics Limited

UK . 882 parts In-Stock

1+ parts

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882

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Sensible Micro Corp

USA . 245 parts In-Stock

1+ parts

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245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,669 parts In-Stock

1+ parts

$3.460

100+ parts

-

1k+ parts

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10k+ parts

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4,669

$3.460

-

-

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Continental Prestige Electronics

USA . 6,184 parts In-Stock

1+ parts

$8.328

100+ parts

-

1k+ parts

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10k+ parts

$8.161

6,184

$8.328

-

-

$8.161

Netroflash

USA . 100 parts In-Stock

1+ parts

$8.330

100+ parts

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1k+ parts

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100

$8.330

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-

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AZTECH Wire

Italy . 769 parts In-Stock

1+ parts

$8.888

100+ parts

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1k+ parts

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10k+ parts

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769

$8.888

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-

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Corohmni

South Africa . 571 parts In-Stock

1+ parts

$17.891

100+ parts

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571

$17.891

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Ampacity Inc.

Singapore . 1,083 parts In-Stock

1+ parts

$20.000

100+ parts

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1,083

$20.000

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RC Electronics

USA . 8,472 parts In-Stock

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8,472

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Kepictronics

USA . 4,800 parts In-Stock

1+ parts

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4,800

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Argo Parts USA

USA . 4,463 parts In-Stock

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4,463

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A-Z Elektronik GmbH

Germany . 4,000 parts In-Stock

1+ parts

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100+ parts

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4,000

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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GreenTree Electronics

Israel . 2,000 parts In-Stock

1+ parts

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2,000

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Corphita

USA . 864 parts In-Stock

1+ parts

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864

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Speed Components Ltd (Excess)

Israel . 217 parts In-Stock

1+ parts

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217

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iodParts Technologies Inc.

India . 38 parts In-Stock

1+ parts

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100+ parts

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38

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-

Overview

Experience superior performance and reliability with the MTFC4GACAALT-4MIT by Micron Technology. As a leader in flash memory technology, Micron delivers cutting-edge solutions for various applications. This product offers unmatched value and benefits to customers looking for high-quality memory solutions. With its advanced features and innovative design, the MTFC4GACAALT-4MIT is the perfect choice for those seeking top-tier performance and efficiency in their electronic devices. Trust Micron Technology to provide you with the best in flash memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory chip, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and more efficient performance.

Nominal Supply Voltage / Vsup (V): 3.3

Standard voltage supply that is commonly used in electronic devices, ensuring compatibility.

Maximum Operating Temperature: 85 °C

This product can operate efficiently in a wide range of temperatures, making it versatile and reliable in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making the flash memory chip energy-efficient and fast.

Technical Specifications

Flash Memory MTFC4GACAALT-4MIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

MLC NAND TYPE

Width:

14 mm

Trade Compliance

MTFC4GACAALT-4MIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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